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Technical Committee on Electron Device (ED)
Chair: Tetsu Kachi (Toyota Central R&D Labs.) Vice Chair: Naoki Hara (Fujitsu Labs.)
Secretary: Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)
Assistant: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.)

DATE:
Fri, Jul 29, 2011 13:30 - 17:25
Sat, Jul 30, 2011 09:00 - 15:35

PLACE:
(Prof. Naotaka Uchitomi. +81-258-47-9505)

TOPICS:
TFT (organic,oxide), Semiconductor process (surface, interface, reliability), etc.

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Fri, Jul 29 PM (13:30 - 17:25)
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(1) 13:30 - 13:55
Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs
Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio)

(2) 13:55 - 14:20
Control of Interface Electric Charge by MIM Gate Structure on AlGaN/GaN HFETs
Yoshimichi Fukasawa, Eiji Waki, Hiroshi Fushimi (New Japan Radio)

(3) 14:20 - 14:45
Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST)

(4) 14:45 - 15:10
Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs
Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.)

----- Break ( 10 min. ) -----

(5) 15:20 - 15:45
Deposition of Nb2O5 films by fiash boiling spray CVD
Koji Tominaga (HORIBA), Masanori Trasaka, Tetsuo Shimizu (STEC), Jiro Senda (Doshisha Univ.), Kozo Ishida (HORIBA)

(6) 15:45 - 16:10
Effects of surface pre-treatments for AlN sputtering and Al2O3 atomic layer depositions on GaAs(001)
Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki (JAIST)

(7) 16:10 - 16:35
Characterization of Low-Frequency Noise in SiNx Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Kensuke Miura, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.)

(8) 16:35 - 17:00
Inductively coupled plasma etching of Al-rich AlGaAs for Photonic Crystal Fabrication
Yuta Kitabayashi, Masaya Mochizuki, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.)

(9) 17:00 - 17:25
Spring Characteristics of Circular Arc Shaped 3D Micro-cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process
Hiuma Iwase, Jian Wang, Masashi Akabori, Syoji Yamada (JAIST)

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Sat, Jul 30 AM (09:00 - 15:35)
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(10) 09:00 - 09:25
Carrier injection kinetics of P3HT/n-Si heterojunction diodes
Sho Kaneko, Naoki Oyama, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)

(11) 09:25 - 09:50
Characterization of organic solar cells made with MoO3 hole transport layers
Kazuki Yoshida, Akira Kurihara, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)

(12) 09:50 - 10:15
Study of film formability and photovoltaic properties of highly soluble thiophene oligomers
Takahiko Suzuki, Kazuki Yoshida, Akira Kurihara, Kazumasa Ota, Kazuaki Sato, Yoshihiro Ohba, Fumihiko Hirose (Yamagata Univ.)

(13) 10:15 - 10:40
Highly efficient dye-sensitized solar cells by dye adsorption method with high-temperature solvent
Akinobu Ishida, Hiroki Yoshida, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ)

(14) 10:40 - 11:05
Formation of a titanium oxide nanotube film on a transparent conductive oxide layer by anodization
Ryota Kojima, Mohammad Maksudur Rahman, Mehdi El Fassy Fihry, Yasuo Kimura, Michio Niwano (RIEC, Tohoku Univ.)

----- Break ( 10 min. ) -----

(15) 11:15 - 11:40
Analysis of a monolithic integrated rectenna for zero bias detection by using bow-tie antenna and triple-barrier resonant tunneling diode
Masahito Nakamura, Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.)

(16) 11:40 - 12:05
Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method
Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.)

(17) 12:05 - 12:30
Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs
Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS)

----- Lunch Break ( 60 min. ) -----

(18) 13:30 - 13:55
Growth and characterization of GaSb film on Si(111) substrate using Sb template layer
Hideyuki Toyota, Akinari Okabe, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.)

(19) 13:55 - 14:20
InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy
Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)

(20) 14:20 - 14:45
Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes
Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.)

(21) 14:45 - 15:10
Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures
Masashi Akabori, Tomoyuki Katayama, Kosaku Moromoto, Hiuma Iwase, Syoji Yamada (CNMT JAIST)

(22) 15:10 - 15:35
Anomalous Hall Effect in ZnSnAs2:Mn Epitaxial Film Gorwn on InP Substrates
Hiroto Oomae, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Oct 20, 2011 - Fri, Oct 21, 2011: [Fri, Aug 12]

# SECRETARY:
Kunio Tsuda（Toshiba）
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E-mail :