Fri, Jul 29 PM
13:30 - 17:25 |
| (1) |
13:30-13:55 |
Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs |
Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio) |
| (2) |
13:55-14:20 |
Control of Interface Electric Charge by MIM Gate Structure on AlGaN/GaN HFETs |
Yoshimichi Fukasawa, Eiji Waki, Hiroshi Fushimi (New Japan Radio) |
| (3) |
14:20-14:45 |
Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET |
Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) |
| (4) |
14:45-15:10 |
Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs |
Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.) |
| |
15:10-15:20 |
Break ( 10 min. ) |
| (5) |
15:20-15:45 |
Deposition of Nb2O5 films by fiash boiling spray CVD |
Koji Tominaga (HORIBA), Masanori Trasaka, Tetsuo Shimizu (STEC), Jiro Senda (Doshisha Univ.), Kozo Ishida (HORIBA) |
| (6) |
15:45-16:10 |
Effects of surface pre-treatments for AlN sputtering and Al2O3 atomic layer depositions on GaAs(001) |
Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki (JAIST) |
| (7) |
16:10-16:35 |
Characterization of Low-Frequency Noise in SiNx Insulator-Gate GaAs Etched Nanowire FETs |
Toru Muramatsu, Kensuke Miura, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) |
| (8) |
16:35-17:00 |
Inductively coupled plasma etching of Al-rich AlGaAs for Photonic Crystal Fabrication |
Yuta Kitabayashi, Masaya Mochizuki, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.) |
| (9) |
17:00-17:25 |
Spring Characteristics of Circular Arc Shaped 3D Micro-cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process |
Hiuma Iwase, Jian Wang, Masashi Akabori, Syoji Yamada (JAIST) |
Sat, Jul 30 AM
09:00 - 15:35 |
| (10) |
09:00-09:25 |
Carrier injection kinetics of P3HT/n-Si heterojunction diodes |
Sho Kaneko, Naoki Oyama, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) |
| (11) |
09:25-09:50 |
Characterization of organic solar cells made with MoO3 hole transport layers |
Kazuki Yoshida, Akira Kurihara, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) |
| (12) |
09:50-10:15 |
Study of film formability and photovoltaic properties of highly soluble thiophene oligomers |
Takahiko Suzuki, Kazuki Yoshida, Akira Kurihara, Kazumasa Ota, Kazuaki Sato, Yoshihiro Ohba, Fumihiko Hirose (Yamagata Univ.) |
| (13) |
10:15-10:40 |
Highly efficient dye-sensitized solar cells by dye adsorption method with high-temperature solvent |
Akinobu Ishida, Hiroki Yoshida, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ) |
| (14) |
10:40-11:05 |
Formation of a titanium oxide nanotube film on a transparent conductive oxide layer by anodization |
Ryota Kojima, Mohammad Maksudur Rahman, Mehdi El Fassy Fihry, Yasuo Kimura, Michio Niwano (RIEC, Tohoku Univ.) |
| |
11:05-11:15 |
Break ( 10 min. ) |
| (15) |
11:15-11:40 |
Analysis of a monolithic integrated rectenna for zero bias detection by using bow-tie antenna and triple-barrier resonant tunneling diode |
Masahito Nakamura, Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) |
| (16) |
11:40-12:05 |
Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method |
Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.) |
| (17) |
12:05-12:30 |
Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs |
Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS) |
| |
12:30-13:30 |
Lunch Break ( 60 min. ) |
| (18) |
13:30-13:55 |
Growth and characterization of GaSb film on Si(111) substrate using Sb template layer |
Hideyuki Toyota, Akinari Okabe, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.) |
| (19) |
13:55-14:20 |
InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy |
Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) |
| (20) |
14:20-14:45 |
Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes |
Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) |
| (21) |
14:45-15:10 |
Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures |
Masashi Akabori, Tomoyuki Katayama, Kosaku Moromoto, Hiuma Iwase, Syoji Yamada (CNMT JAIST) |
| (22) |
15:10-15:35 |
Anomalous Hall Effect in ZnSnAs2:Mn Epitaxial Film Gorwn on InP Substrates |
Hiroto Oomae, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. Tech.) |
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