ken-system: Advance Program - 2019-11-CPM-LQE-ED

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Technical Committee on Component Parts and Materials (CPM)
Chair: Mayumi Takeyama (Kitami Inst. of Tech.) Vice Chair: Yuichi Nakamura (Toyohashi Univ. of Tech.)
Secretary: Hideki Nakazawa (Hirosaki Univ.)
Assistant: Yasuo Kimura (Tokyo Univ. of Tech.), Tomoaki Terasako (Ehime Univ.), Fumihiko Hirose (Yamagata Univ.)

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Technical Committee on Electron Devices (ED)
Chair: Michihiko Suhara (TMU) Vice Chair: Hiroki Fujishiro (Tokyo Univ. of Science)
Secretary: Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (Toyama Pref. Univ.)
Assistant: Junji Kotani (Fjitsu Lab.), Takuya Tsutsumi (NTT)

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Technical Committee on Lasers and Quantum Electronics (LQE)
Chair: Hiroshi Aruga (Mitsubishi Electric) Vice Chair: Hiroshi Yasaka (Tohoku Univ.)
Secretary: Yasumasa Kawakita (Furukawa Electric Industries), Masaya Nagai (Osaka Univ.)
Assistant: Fumito Nakajima (NTT)

DATE:
Thu, Nov 21, 2019 10:10 - 16:10
Fri, Nov 22, 2019 09:40 - 15:00

PLACE:
Hamamatsu Campus, Shizuoka Univrsity(3-5-1 Johoku, Naka-ku, Hamamatsu City. From Bus Terminal at JR Hamamatsu Station's North Exit, take any bus at Bus Stop No15 or 16 and get off at Shizuoka Daigaku Bus Stop. (approx. 20 min., approx. 10 departures/hour). www.shizuoka.ac.jp/english/campuslife/campus/hamamatsu/index.html)

TOPICS:
Nitride Semiconductor Devices, Materials, Related Technologies

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Thu, Nov 21 AM (10:10 - 12:20)
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(1) 10:10 - 10:30
Investigation of flat thin film growth conditions in ALD growth of ZnO
Ryo Yamamoto, Hiroto Kano, Atsushi Nakamura, Wataru Inami (Shizuoka Univ.)

(2) 10:30 - 10:50
Optical properties of ZnO crystals grown at high temperature on c c-plane sapphire substrates by mist mist-CVD
Kosei Ohashi, Kenya Fujiwara, Mikihiro Yamamoto, Kazuhiko Hara (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Tetsuya Kouno (Shizuoka Univ.)

(3) 10:50 - 11:10
Structural and Photoluminescence Properties of ZnO Nanorods Grown on Various TCO Seed Layers by Chemical Bath Deposition
Kohdai Hamamoto, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)

(4) 11:10 - 11:30
Chemical Bath Deposition of ZnO Nanorods on Very Thin GZO Seed Layers and Their Structural and Optical Properties
Tomoaki Terasako, Kohdai Hamamoto, Kenta Yamada, Shinichiro Kohda (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)

----- Lunch Break ( 50 min. ) -----

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Thu, Nov 21 PM (12:20 - 13:55)
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(5) 12:20 - 12:40
Photocatalytic properties of ZnO modified by electrochemical treatment
Koji Abe, Atsuhito Otake (Nitech)

(6) 12:40 - 13:00
Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit
Makoto Hashikawa, Kosuke Urata, Takumi Takenohata, Toshiyuki Oishi, Takayoshi Oshima (Saga Univ.)

(7) 13:00 - 13:20
Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure
Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba)

(8) 13:20 - 13:40
Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE
Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.)

----- Break ( 15 min. ) -----

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Thu, Nov 21 PM (13:55 - 15:30)
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(9) 13:55 - 14:15
Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.)

(10) 14:15 - 14:35
Fabrication of GaN-QPM crystal using DP-SAG and evaluation of optical characterization for SHG
Kai Matsuhisa, Yuto Kobayashi, Hiroki Ishihara, Mako Sugiura, Atsushi Sugita, Yoku Inoue, Takayuki Nakano (Shizuoka Univ.)

(11) 14:35 - 14:55
AlGaN-based electron beam excitation UV lasers using AlGaN well layer
Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University)

(12) 14:55 - 15:15
Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.)

----- Break ( 15 min. ) -----

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Thu, Nov 21 PM (15:30 - 16:10)
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(13) 15:30 - 15:50
Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN
Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.)

(14) 15:50 - 16:10
Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors
Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.)

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Fri, Nov 22 AM (09:40 - 10:55)
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(15) 09:40 - 10:00
Crystallinity evaluation of tin disulfide thin films by direct sulfidation of evaporated tin films
Yuki Tamura, Atsushi Nakamura (Shizuoka Univ.)

(16) 10:00 - 10:20
Experimental study on the antireflection nanotexture for organic photovoltaics
Kenta Hiraga, Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.)

(17) 10:20 - 10:40
Fabricicate of Fe3O4/PU composites fiber mat by electrospinning method
Takumi Mori, Atsushi Nakamura (Shizuoka Univ.)

----- Break ( 15 min. ) -----

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Fri, Nov 22 AM (10:55 - 11:55)
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(18) 10:55 - 11:15
Evaluation of electrode surface specificity in pH sensor
Ryosuke Shinzawa, Atsushi Nakamura (Shizuoka Univ.)

(19) 11:15 - 11:35
Production of non-enzymatic glucose sensor
Takahiro Niwa, Atushi Nakamura (Shizuoka Univ)

(20) 11:35 - 11:55
Fabrication of needle-shaped structure for achievement of LED probe to insert brain for optogenetics
Yusei Nakayama, Hiroki Yasunaga (Toyohashi Tech), Chihiro Inami, Masahiro Ohsawa (Nagoya City Univ.), Hiroto Sekiguchi (Toyohashi Tech/JST PRESTO)

----- Lunch Break ( 50 min. ) -----

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Fri, Nov 22 PM (12:45 - 13:45)
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(21) 12:45 - 13:05
Progress of UVC-LEDs using DC sputter AlN templates
Yosuke Mogami (RIKEN/Saitama Univ.), Atsushi Osawa, Kazuto Ozaki, Yukitake Tanioka, Atsushi Maeoka (SCREEN), Yuri Itokazu, Syunsuke Kuwaba (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Hiroyuki Yaguchi (Saitama Univ.), Hideki Hirayama (RIKEN)

(22) 13:05 - 13:25
Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes
Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.)

(23) 13:25 - 13:45
Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer
Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.)

----- Break ( 15 min. ) -----

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Fri, Nov 22 PM (14:00 - 15:00)
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(24) 14:00 - 14:20
Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells
Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony)

(25) 14:20 - 14:40
Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements
Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY)

(26) 14:40 - 15:00
Evaluation of III-V nitride by photothermal deflection spectroscopy
Masatomo Sumiya (NIMS)

# Information for speakers
General Talk will have 15 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:

Tue, Nov 26, 2019 (tentative): Japan Society for the Promotiton of Machine Industry [Tue, Sep 17]
Fri, Feb 28, 2020 - Sat, Feb 29, 2020 (tentative): Presentation Rm., KCB01, Tokyo Univ. of Technol. [Fri, Jan 24], Topics: Young Researcher's Conference

# SECRETARY:
Tomoaki Terasako （Ehime University）
TEL: +81-89-927-9789 FAX: +81-89-927-9790
E-mail:

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=== Technical Committee on Electron Devices (ED) ===
# FUTURE SCHEDULE:

Mon, Dec 23, 2019 - Tue, Dec 24, 2019: [Fri, Oct 18]
Fri, Jan 31, 2020: Kikai-Shinko-Kaikan Bldg. [Mon, Nov 11], Topics: Compound semiconductor, High speed and High frequency devices/Microwave technologies

# SECRETARY:
Masataka Higashiwaki (NICT)
TEL : +81-42-327-6092 Fax : +81-42-327-5527
E-mail : m