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=============================================== Technical Committee on Electron Device (ED) Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba) Secretary: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC) Assistant: Masataka Higashiwaki (NICT), Toshiyuki Oishi (Saga Univ.) DATE: Tue, Oct 25, 2016 13:00 - 17:00 Wed, Oct 26, 2016 09:30 - 13:30 PLACE: (Dr. Shigekazu Nagai. +81-59-231-9769) TOPICS: ---------------------------------------- Tue, Oct 25 PM (13:00 - 17:00) ---------------------------------------- (1) 13:00 - 13:25 I-V characteristics of W-FE covered with Thorium Yamanashi Ryotaro, Yoichiro Neo (Shizuoka Univ.), Teruaki Ohno (Technex), Hidenori Mimura (Shizuoka Univ.) (2) 13:25 - 13:50 Operational Characteristics and Analysis of Field Emitter Arrays under X-ray Irradiation Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Masayoshi Nagao (AIST), Masafumi Akiyoshi (Osaka Pref. Univ.), Ikuji Takagi (Kyoto Univ.) (3) 13:50 - 14:15 Computer simulation for evaluation of performance of amplifier with vacuum transistor Yasuhito Gotoh (Kyoto Univ.) (4) 14:15 - 14:40 Development Activity of Vacuum Electronics in THz Band Mitsuru Yoshida, Junichi Kobayashi, Yusuke Fujishita, Norio Masuda (NETS), Norihiko Sekine, Atsushi Kanno, Naokatsu Yamamoto, Akifumi Kasamatsu, Iwao Hosako (NICT) (5) 14:40 - 15:05 Study on the photoresponse of silicon field emitter arrays (II) Hidetaka Shimawaki (HIT), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ----- Break ( 15 min. ) ----- (6) 15:20 - 15:45 Stabilization of spin polarization of field emitted electrons using interlayer antiferromagnetic Cr (001) surface Kento Miyazaki, Naoya Sakai (Mie Univ), Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (Mie Univ/ Mie CUTE) (7) 15:45 - 16:10 Ab initio calculations of field emission from carbon emitters on the basis of time-dependent density functional theory (II) Toshiharu Higuchi, Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba) (8) 16:10 - 16:35 Diagnosis for electron beam pulse from NEA-GaAs PhotoCathode Ryo Yoshitake, Keigo Mitsuno, Tomoaki Masuzawa, Yoshinori Hatanaka, Makoto Hosoda, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ) (9) 16:35 - 17:00 Fabrication of Vacuum Nanoelectronics Devices using Minimal Fab System Masayoshi Nagao, Katsuhisa Murakami, Noriyuki Tatsumi, Sommawan Khumpuang, Shiro Hara (AIST), Yasuhito Gotoh (Kyoto Univ.) ---------------------------------------- Wed, Oct 26 AM (09:30 - 13:30) ---------------------------------------- (10) 09:30 - 09:55 A planer-type electron emission device using graphene gate electrode Katsuhisa Murakami (AIST), Shunsuke Tanaka (Univ. Tsukuba), Masayoshi Nagao (AIST), Yoshihiro Nemoto, Masaki Takeguchi (NIMS), Jun-ichi Fujita (Univ. Tsukuba) (11) 09:55 - 10:20 Electron Emission from W(100) Surface modified by Group 3 Elements -- Work Function Reduction by Sc Oxide, Pr Oxide and Nd Oxide -- Takashi Kawakubo (NIT Kagawa), Hideaki Nakane (Muroran Inst. of Tech.) (12) 10:20 - 10:45 Fabrication of nano-emitter use of palladium dioxide dispersed in collodion Hirotaka Asai, Shigeki Kumagai, Hidekazu Murata, Eiji Rokuta (Meijo Univ.) ----- Break ( 15 min. ) ----- (13) 11:00 - 11:25 A verification of formation process of emitters with nano-protrusion fabricated by the field-induced oxygen etching Minoru Wakamoto, Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (MIe Univ.) (14) 11:25 - 11:50 Trials to Clarify the Mechanism of Low Field Emission from Carbon-related Materials -- Through Field Emission from Vacuum Arc-Prepared Carbon Films and C60 -- Masahiro Sasaki, Yoichi Yamada, Toshiharu Higuchi, Ken Asanagi, Manabu Adachi, Yuji Nishiyama, Takuma Mojin (U. of Tsukuba) (15) 11:50 - 12:15 Radiation tolerance of CdTe/CdS photoconductive target Tomoaki Masuzawa, Yoichiro Neo (Shizuoka Univ.), Yasuhito Gotoh (Kyoto Univ.), Tamotsu Okamoto (National Inst. of Technol. Kisarazu College), Masayoshi Nagao (AIST), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Prefecture Univ.), Ikuji Takagi (Kyoto Univ.), Hidenori Mimura (Shizuoka Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Mon, Dec 12, 2016 - Tue, Dec 13, 2016 (tentative): Kyoto University [Wed, Nov 2], Topics: Nitride semiconductors, optoelectronic devices, and related materials Mon, Dec 19, 2016 - Tue, Dec 20, 2016: RIEC, Tohoku Univ [Fri, Oct 28], Topics: Millimeter-wave, terahertz-wave devices and systems Thu, Jan 26, 2017 - Fri, Jan 27, 2017: Kikai-Shinko-Kaikan Bldg. [Wed, Nov 16], Topics: Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies Mon, Jan 30, 2017 - Tue, Jan 31, 2017: Miyajima-Morino-Yado(Hiroshima) [Wed, Nov 16], Topics: Circuit, Device and Engineering Science # SECRETARY: Toshikazu Suzuki (JAIST) TEL : +81-761-51-1441 Fax : +81-761-51-1455 E-mail :  si   jaist Manabu Arai (New Japan Radio Co., Ltd.) TEL： 049-278-1441 Fax : 049-278-1269 E-mail :   injr Last modified: 2016-08-18 23:59:14 |
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