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=============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Yuichi Tomori Vice Chair: Toshiaki Suhara Secretary: Ryoko Yoshimura, Tatsuo Hatta Assistant: Takashi Tadokoro =============================================== Technical Committee on Electron Device (ED) Chair: Takao Waho Vice Chair: Masaaki Kuzuhara Secretary: Tsuyoshi Tanaka, Manabu Arai Assistant: Shin-ichiro Takatani =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Kiyoshi Ishii Vice Chair: Kiichi Kamimura Secretary: Yoshitaka Kitamoto, Toru Matsuura Assistant: Hidehiko Shimizu, Seiji Toyoda DATE: Thu, Oct 13, 2005 09:30 - 18:00 Fri, Oct 14, 2005 09:00 - 16:30 Sat, Oct 15, 2005 09:00 - 12:00 PLACE: Biwako-Kusatsu Campus, Ritsumeikan University(Noji Higashi 1 chome, 1-1 Kusatsu, 525-8577 Shiga-ken, JAPAN. From JR Minami Kusatsu Station:Exit East Gate and take the Omi Tetsudo Bus ("Ritsumeikan Daigaku Iki" or "Ritsumeikan Daigaku Keiyu Tobishima Green Hill Iki") to "Ritsumeikan Daigaku"(8 minutes).http://www.ritsumei.ac.jp/eng/profile/visit_rits/index.shtml#bkc. Prof. Yasushi Nanishi. 077-566-1111) TOPICS: Nitride Based Optical and Electronic Devices, Materials and Related Technologies ---------------------------------------- Thu, Oct 13 AM InN Related Materials/Devices (09:30 - 12:20) ---------------------------------------- (1) 09:30 - 09:50 High-quality InN grown on micro-facetted InN template Daisuke Muto, Hiroyuki Naoi, Tsutomu Araki, Sachio Kitagawa, Masahito Kurouchi, Hyunseok Na, Yasushi Nanishi (Ritsumeikan Univ.) (2) 09:50 - 10:10 NH3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) (3) 10:10 - 10:30 (11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE -- Investigation of Non-polar InN -- Yuya Kumagai, Akihiro Tsuyuguchi, Kuniko Teraki, Tsutomu Araki, Hiroyuki Naoi, Yasushi Nanishi (Ritsumeikan Univ.) (4) 10:30 - 10:50 Polarity determination of InN by atomic hydrogen irradiation Yuya Hayakawa, Daisuke Muto (Ritsumeikan Univ.), Hiroyuki Naoi (COE program), Akira Suzuki (Research Organization of Science and Engineering), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) ----- Break ( 10 min. ) ----- (5) 11:00 - 11:20 Growth and characterization of InN/InGaN multiple quantum wells by RF-MBE Tatsuo Ohashi, Shunsuke Ishizawa, Petter Holmström, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) (6) 11:20 - 11:40 Characterization of InN/InGaN quantum well structures grown by RF-MBE Masahito Kurouchi, Sinya Takado, Hiroyuki Naoi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) (7) 11:40 - 12:00 The Growth of AlInN Ternary Alloys and Fabrication of InN/AlInN MQWs Wataru Terashima, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) (8) 12:00 - 12:20 Mg doping of MOVPE InN using CP2Mg Yasuhiko Nagai, Hiroshi Miwa, , Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) ---------------------------------------- Thu, Oct 13 PM GaN Based Electronic Devices (13:30 - 18:00) ---------------------------------------- (9) 13:30 - 13:50 C-band AlGaN/GaN HEMTs with 170W Output Power Yoshiharu Takada, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (Toshiba) (10) 13:50 - 14:10 Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) (11) 14:10 - 14:30 Pnp AlGaN/GaN HBTs operated under high-temperature and high-power Kazuhide Kumakura, Toshiki Makimoto (NTT Basic Research Labs.) (12) 14:30 - 14:50 Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications Ken Nakata, Takeshi Kawasaki, Seiji Yaegashi (Eudyna Device Inc.) (13) 14:50 - 15:10 AlGaN/GaN heterojunction field-effect transistors with InAlGaN quaternary alloy capping layers lattice matched to GaN Satoshi Nakazawa, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka (Matsushita Electric), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.) (14) 15:10 - 15:30 Characteristics of AlGaN/GaN HEMT on (111) Silicon Substrates Yoshiaki Katayama, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.) ----- Break ( 10 min. ) ----- (15) 15:40 - 16:00 Lateral tunneling transport in submicron gates on AlGaN/GaN HFET Junji Kotani, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) (16) 16:00 - 16:20 Study on correlation between the leakage current of GaN-layer and the luminescence intensity Akihiro Hinoki (Ritsumeikan Univ.), , Tadayoshi Tsuchiya, Tomoyuki Yamada, Masayuki Iwami (FED), Junjiroh Kikawa, Tsutomu Araki, Akira Suzuki, Yasushi Nanishi (Ritsumeikan Univ.) (17) 16:20 - 16:40 Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors Tomoyuki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Masayuki Iwami (R&D Association for Future Electron Devices), Tsutomu Araki, Akira Suzuki, Yasushi Nanishi (Ritsumeikan Univ.) (18) 16:40 - 17:00 Electrical Properties of Ni/i-AlGaN/GaN Gate Structures and Influence of Termal Annealing Takayuki Sawada, Satoshi Yoneta, Kensuke Takahashi (Hokkaido Inst. Tech.), Seong-Woo Kim, Toshimasa Suzuki (Nippon Inst. Tech.) (19) 17:00 - 17:20 Surface acoustic wave devices fabricated on n+ GaN/undoped GaN layers Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama (NTT), Kohji Hohkawa (Kanagawa Inst. Technol.) (20) 17:20 - 17:40 Formation of AlGaN/GaN nano wire network using selective RF-MBE Takeshi Oikawa, Taketomo Sato, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) (21) 17:40 - 18:00 Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations Masataka Higashiwaki, Norio Onojima, Toshiaki Matsui (NICT) ---------------------------------------- Fri, Oct 14 AM Crystal Growth and Optoelectronic Properties (09:00 - 14:00) ---------------------------------------- (22) 09:00 - 09:20 Simulation of Phase Separation in InAlBN Takeshi Kimura, Takashi Matsuoka (Tohoku Univ.) (23) 09:20 - 09:40 Characteristics of Group III Nitrides Grown by PLD Hiroshi Fujioka, Jitsuo Ohta, Shigeru Inoue, Atsushi Kobayashi, Koichirou Okamoto (The University of Tokyo), TaeWon Kim, Nobuyuki Matsuki (KAST) (24) 09:40 - 10:00 Low temperature deposition of AlN films by compound source MBE technique Toshiaki Kobayashi, Kouji Hirayama, Shinichi Egawa, Miwako Akiyama, Koichi Sugimoto, Taichi Baba, Tohru Honda, Hideo Kawanishi (Kogakuin Univ.) (25) 10:00 - 10:20 Fabrication processes of UV electroluminescent devices based on GaN crystallites Taichi Baba, Miwako Akiyama, Shinichi Egawa, Toshiaki Kobayashi, Noriyuki Hasunuma, Tohru Honda, Hideo Kawanishi (Kogakuin Univ.) ----- Break ( 10 min. ) ----- (26) 10:30 - 10:50 Growth and characterization in AlGaN using polished AlN epilayer Norihiro Masuda, Akira Ishiga, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tomohiko Shibata, Mitsuhiro Tanaka (NGK), Masaya Haraguchi, Noriyuki Kuwano (Kyuusyuu Univ.) (27) 10:50 - 11:10 n-type conductivity control and characterization of Si doped AlGaN with high Al mole fraction Takuya Katsuno, Takashi Onishi, Yuhuai Liu, (Mie Univ.), Tomohiko Shibata, Mitsuhiro Tanaka (NGK), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) (28) 11:10 - 11:30 Growth of AlN crystal on various SiC substrates by sublimation method Noritaka Tsuchiya, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Kenji Shimono, Tadashi Noro, Takashi Takagi (Ibiden Co. Ltd), Tomoaki Furusho (SiXON Ldt.) (29) 11:30 - 11:50 Development of high quality SiC substrates Tomoaki Furusho, Ryohei Kobayashi, Makoto Sasaki, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi (SiXON) ----- Lunch Break ( 70 min. ) ----- (30) 13:00 - 13:20 Liquid sensor using gateless AlGaN/GaN HEMT structure Takuya Kokawa, Takeshi Kimura, Taketomo Sato, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) (31) 13:20 - 13:40 Hydrogen Gas Sensors of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure Kazushi Matsuo, Takeshi Kimura, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) (32) 13:40 - 14:00 Hydrogen generation by photoelectrolysis using nitride semiconductors Katsushi Fujii (JST), Masato Ono, Takashi Ito, Yasuhiro Iwaki (TUS), Kazuhiro Ohkawa (TUS/JST) ---------------------------------------- Fri, Oct 14 PM GaN Based Optoelectronic Devices (14:00 - 16:30) ---------------------------------------- (33) 14:00 - 14:20 High Power operation of GaN-based laser diode with high slope efficiency Kyosuke Kuramoto, Akihito Ohno (Mitsubishi Elec. Corp.), Tomoo Yamada, Hiroaki Okagawa (Mitsubishi Cable Industries, Ltd.), Zempei Kawazu, Kazushige Kawasaki, Nobuyuki Tomita, Katsuomi Shiozawa, Kyozo Kanamoto, Hiroshi Watanabe, Masayoshi Takemi, Tetsuya Yagi (Mitsubishi Elec. Corp.), Hiroaki Murata (Mitsubishi Cable Industries, Ltd.), Akihiro Shima (Mitsubishi Elec. Corp.) (34) 14:20 - 14:40 High-Power Blue-Violet Laser Diodes for Optical Disc Systems Takashi Kano, Yasuhiko Nomura, Masayuki Hata, Daijiro Inoue, Masayuki Shono (Sanyo Electric) ----- Break ( 10 min. ) ----- (35) 14:50 - 15:10 Growth and charctrization of InGaN nanocolumn LED by RF-MBE Akihiko Kikuchi, Makoto Tada, Katsumi Kishino (Sophia Univ.) (36) 15:10 - 15:30 Obserbation of high internal quantum efficiency from 330nm-band InAlGaN quantum wells Hideki Hirayama, Takayoshi Takano, Tomoaki Ohashi, Sachie Fujikawa (RIKEN), Norihiko Kamata (Saitama Univ.), Yukihiro Kondo (RIKEN) (37) 15:30 - 15:50 Correlation between threading dislocations and recombination dynamics in InGaN quantum wells Akio Kaneta, Mitsuru Funato (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.), Yoichi Kawakami (Kyoto Univ.) (38) 15:50 - 16:10 Multicolor emission from InGaN/GaN three-dimensional quantum structures Mitsuru Funato, Teruhisa Kotani, Tsuyoshi Kondou, Koji Nishizuka (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia), Yoichi Kawakami (Kyoto Univ.) (39) 16:10 - 16:30 PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2” ×6 wafers) Kazutada Ikenaga, Akinori Ubukata, Akira Yamaguchi, Nakao Akutsu, Kinji Fujii, Koh Matsumoto (TAIYO NIPPON SANSO) ---------------------------------------- Sat, Oct 15 AM Discussion Sessions (09:00 - 12:00) ---------------------------------------- (40) 09:00 - 10:00 1.Potential of GaN based Electronic Devices Discussion Leader: Kenji Shiojima (41) 10:00 - 11:00 2.Improvement Aiming for 100% Internal Quantum Efficiency Discussion Leader: Yoichi Kawakami (42) 11:00 - 12:00 3.Future Prospects of Nitride Substrates Discussion Leader: Akira Usui # Information for speakers General Talk (20) will have 15 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - International Workshop on Nitride Semiconductors (IWN2006) # CONFERENCE ANNOUNCEMENT: - Please join us for a reception on the evening on October 13. === Technical Committee on Lasers and Quantum Electronics (LQE) === # FUTURE SCHEDULE: Thu, Nov 3, 2005 - Fri, Nov 4, 2005: [Thu, Aug 18], Topics: Ultra-high-speed transmission, modulation technologies, Ultra-high-speed optical / electrical devices, wideband WDM devices Fri, Dec 9, 2005: Kikai-Shinko-Kaikan Bldg. [Thu, Sep 15], Topics: Semiconductor Lasers and Related Technologies Tue, Jan 31, 2006 - Thu, Feb 2, 2006: Kobe Univ. [Fri, Nov 11], Topics: Photonic integrated circuits and devices, swtiching, PLC, fiber devices, waveguide analysis, and others # SECRETARY: Ryoko Yoshimura (NTT) TEL +81-46-240-3249, FAX +81-46-240-4345 E-mail: r   y aecl   Tatsuo Hatta (Mitsubishi Electric) TEL +81-72-780-2653, FAX +81-72-780-2663 E-mail:  t lsi lco# ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/ === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Thu, Nov 17, 2005: [Fri, Sep 16] Fri, Nov 25, 2005: Central Electric Club [Fri, Sep 16] Thu, Dec 22, 2005: [Mon, Oct 24] Wed, Jan 18, 2006 - Fri, Jan 20, 2006: Kikai-Shinko-Kaikan Bldg. [Thu, Nov 17], Topics: Compound Semiconductor IC and High-Speed, High-Frequency Devices Thu, Jan 26, 2006 - Fri, Jan 27, 2006: Hokkaido Univ. [Wed, Nov 16], Topics: - # SECRETARY: Tsuyoshi Tanaka（Matsushita） TEL: 075-956-9083, FAX: 075-956-9110 E-mail:      pa  c Manabu Arai（New JRC） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:   injrShinichiro Takatani（Hitachi） TEL: 049-278-1477、FAX: 049-278-1419 E-mail: injr=== Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Oct 21, 2005: Kikai-Shinko-Kaikan Bldg. [Fri, Aug 19], Topics: Optical Recording, etc. Fri, Nov 11, 2005 - Sat, Nov 12, 2005: [Fri, Sep 16] Fri, Jan 20, 2006: [Thu, Nov 10] # SECRETARY: Yoshitaka Kitamoto (Tokyo Institute of Technology) TEL 045-924-5424, FAX 045-924-5433 E-mail:    iem   Tohru Matsuura (ATR) TEL 0774-95-1173, FAX 0774-95-1178 E-mail: h matrLast modified: 2005-10-07 21:40:06 |
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