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Technical Committee on Microwaves (MW)
Chair: Yoshinori Kogami (Utsunomiya Univ.)
Vice Chair: Tadashi Kawai (Univ. of Hyogo), Kensuke Okubo (Okayama Prefectural Univ.), Shintaro Shinjo (Mitsubishi Electric)
Secretary: Masaru Sato (Fujitsu Labs.), Masataka Ohira (Saitama Univ.)
Assistant: Kyoya Takano (Tokyo Univ. of Science), Naoki Hasegawa (Softbank)

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Technical Committee on Electron Devices (ED)
Chair: Michihiko Suhara (TMU) Vice Chair: Hiroki Fujishiro (Tokyo Univ. of Science)
Secretary: Tatsuya Iwata (Toyama Pref. Univ.), Junji Kotani (Fjitsu Lab.)
Assistant: Takuya Tsutsumi (NTT)

DATE:
Fri, Jan 29, 2021 10:30 - 16:40

PLACE:
Online

TOPICS:

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Fri, Jan 29 AM (10:25 - 12:10)
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----- Opening Address ( 5 min. ) -----

(1) 10:30 - 10:55
Study on a design theory for electromagnetically-coupled half-wavelength resonator filter
Motoki Futatsuya, Toshio Ishizaki (Ryukoku Univ)

(2) 10:55 - 11:20
Experimental Evaluation of 60-GHz Band Planar Antenna Consisting of Multiple Radiators and Multiple Resonators for Radiation of Three Orthogonal Components
Masataka Ohira, Zhewang Ma (Saitama Univ.)

(3) 11:20 - 11:45
The Fabrication of Time to Digital Converter using phase states at different timings
Yoshiaki Morino, Masaomi Tsuru (Mitsubishi Electric)

(4) 11:45 - 12:10
A V-band Reciever including Vector Sum Phase Shifter with Two Frequency Mixing
Shinya Yokomizo, Morino Yoshiaki, Tsuru Masaomi (Mitsubishi Electric Corp.)

----- Break ( 50 min. ) -----

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Fri, Jan 29 PM (13:00 - 14:15)
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(5) 13:00 - 13:25
DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs
Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS)

(6) 13:25 - 13:50
Analysis of sidegate effect by 2D device simulation in AlGaN/GaN HEMT with different traps
Kaito Ito, Toshiyuki Oishi (Saga Univ.)

(7) 13:50 - 14:15
High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs
Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT)

----- Break ( 10 min. ) -----

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Fri, Jan 29 PM (14:25 - 15:40)
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(8) 14:25 - 14:50
Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.)

(9) 14:50 - 15:15
A study on precise extraction of parasitic resistances in InGaAs HEMTs
Keigo Yaguchi (Tokyo Univ. of Science), Tomotaka Hosotani (Tohoku Univ.), Yohtaro Umeda, Kyoya Takano (Tokyo Univ. of Science), Tetsuya Suemitsu, Akira Satou (Tohoku Univ.)

(10) 15:15 - 15:40
A Study on High-efficiency CMOS Stacked Power Amplifier Based on Harmonic-Tuned Using Gate Capacitance
Shinji Takezoe, Yoshiaki Morino, Masaomi Tsuru (Mitsubishi Electric Corp.)

----- Break ( 10 min. ) -----

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Fri, Jan 29 PM (15:50 - 16:40)
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(11) 15:50 - 16:40
[Invited Talk]
Efficiency Enhancement and Digital Predistortion Technique for Next Generation Power Amplifiers
Atsushi Yamaoka, Thomas Hone, Yoshimasa Egashira, Keiichi Yamaguchi (Toshiba)

----- Closing Address ( 5 min. ) -----

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is technical co-sponsored by IEEE MTT-S Japan Chapter, IEEE MTT-S Kansai Chapter and IEEE MTT-S Nagoya Chapter.

=== Technical Committee on Microwaves (MW) ===
# FUTURE SCHEDULE:

Fri, Mar 5, 2021: Online [Mon, Jan 18]
Fri, Apr 16, 2021: Online [Wed, Feb 17], Topics: Wireless Power Transfer, Microwave

# SECRETARY:
Masaru Sato (Fujitsu Lab.)
E-mail:

or Masataka Ohira (Saitama Univ.)
E-mail:

-u

=== Technical Committee on Electron Devices (ED) ===
# FUTURE SCHEDULE:

Mon, Feb 22, 2021: Online [Wed, Jan 6], Topics: Sensors, MEMS, General

# SECRETARY:
Tatsuya Iwata(Toyama Pref. Univ.)
TEL: +81-766-56-7500
E-mail: t_i