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Technical Committee on Microwaves (MW)

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Chair		Yoshinori Kogami (Utsunomiya Univ.)
Vice Chair		Tadashi Kawai (Univ. of Hyogo), Kensuke Okubo (Okayama Prefectural Univ.), Shintaro Shinjo (Mitsubishi Electric)
Secretary		Masaru Sato (Fujitsu Labs.), Masataka Ohira (Saitama Univ.)
Assistant		Kyoya Takano (Tokyo Univ. of Science), Naoki Hasegawa (Softbank)

Technical Committee on Electron Devices (ED)

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Chair		Michihiko Suhara (TMU)
Vice Chair		Hiroki Fujishiro (Tokyo Univ. of Science)
Secretary		Tatsuya Iwata (Toyama Pref. Univ.), Junji Kotani (Fjitsu Lab.)
Assistant		Takuya Tsutsumi (NTT)

Conference Date	Fri, Jan 29, 2021 10:30 - 16:40
Topics
Conference Place	Online
Sponsors	This conference is technical co-sponsored by IEEE MTT-S Japan Chapter, IEEE MTT-S Kansai Chapter and IEEE MTT-S Nagoya Chapter.
Registration Fee	This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on MW, ED.

Fri, Jan 29 AM 10:25 - 12:10
	10:25-10:30	Opening Address ( 5 min. )
(1)	10:30-10:55	Study on a design theory for electromagnetically-coupled half-wavelength resonator filter	Motoki Futatsuya, Toshio Ishizaki (Ryukoku Univ)
(2)	10:55-11:20	Experimental Evaluation of 60-GHz Band Planar Antenna Consisting of Multiple Radiators and Multiple Resonators for Radiation of Three Orthogonal Components	Masataka Ohira, Zhewang Ma (Saitama Univ.)
(3)	11:20-11:45	The Fabrication of Time to Digital Converter using phase states at different timings	Yoshiaki Morino, Masaomi Tsuru (Mitsubishi Electric)
(4)	11:45-12:10	A V-band Reciever including Vector Sum Phase Shifter with Two Frequency Mixing	Shinya Yokomizo, Morino Yoshiaki, Tsuru Masaomi (Mitsubishi Electric Corp.)
	12:10-13:00	Break ( 50 min. )
Fri, Jan 29 PM 13:00 - 14:15
(5)	13:00-13:25	DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs	Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS)
(6)	13:25-13:50	Analysis of sidegate effect by 2D device simulation in AlGaN/GaN HEMT with different traps	Kaito Ito, Toshiyuki Oishi (Saga Univ.)
(7)	13:50-14:15	High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs	Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT)
	14:15-14:25	Break ( 10 min. )
Fri, Jan 29 PM 14:25 - 15:40
(8)	14:25-14:50	Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination	Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.)
(9)	14:50-15:15	A study on precise extraction of parasitic resistances in InGaAs HEMTs	Keigo Yaguchi (Tokyo Univ. of Science), Tomotaka Hosotani (Tohoku Univ.), Yohtaro Umeda, Kyoya Takano (Tokyo Univ. of Science), Tetsuya Suemitsu, Akira Satou (Tohoku Univ.)
(10)	15:15-15:40	A Study on High-efficiency CMOS Stacked Power Amplifier Based on Harmonic-Tuned Using Gate Capacitance	Shinji Takezoe, Yoshiaki Morino, Masaomi Tsuru (Mitsubishi Electric Corp.)
	15:40-15:50	Break ( 10 min. )
Fri, Jan 29 PM 15:50 - 16:40
(11)	15:50-16:40	[Invited Talk] Efficiency Enhancement and Digital Predistortion Technique for Next Generation Power Amplifiers	Atsushi Yamaoka, Thomas Hone, Yoshimasa Egashira, Keiichi Yamaguchi (Toshiba)
	16:40-16:45	Closing Address ( 5 min. )

Announcement for Speakers
General Talk	Each speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
MW	Technical Committee on Microwaves (MW) [Latest Schedule]
	Contact Address	Masaru Sato (Fujitsu Lab.) E-: or Masataka Ohira (Saitama Univ.) E-: i-u
ED	Technical Committee on Electron Devices (ED) [Latest Schedule]
	Contact Address	Tatsuya Iwata(Toyama Pref. Univ.) TEL: +81-766-56-7500 E-: t_ipu- Junji Kotani (Fujitsu Lab.) E-: jun-01