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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tanemasa Asano (Kyushu Univ.) Vice Chair: Toshihiro Sugii (Fujitsu) Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.) DATE: Fri, Dec 14, 2007 10:00 - 18:00 PLACE: TOPICS: Silicon related material, process and device ---------------------------------------- Fri, Dec 14 AM (10:00 - 18:00) ---------------------------------------- (1) 10:00 - 10:20 Acceleration of Crystal Growth by Pulsed Rapid Thermal Annealing using Ni-Ferritin Masahiro Ochi, Yuuta Sugawara, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (Matsushita Electric Industrial Co.,Ltd., NAIST) (2) 10:20 - 10:40 Shallow Junction Formed by Rapid Heat Treatment using Semiconductor Laser Toshiyuki Sameshima (Tokyo A&T Univ.), Naoki Sano (Hightec Systems Co.), M.Naito (Nissin Ion Equipment Co. Ltd) (3) 10:40 - 11:00 Influence of laser-plasma x-ray irradiation on crystallization of a-Si film by excimer laser annealing Yasuyuki Takanashi, Naoto Matsuo, Kazuya Uejukkoku, Akira Heya (Dept.Mat.Sci.&Chem.,Univ.Hyogo), Sho Amano, Shuji Miyamoto, Takayasu Mochizuki (LASTI,Univ.Hyogo) (4) 11:00 - 11:20 Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs using Device Simulation Tsuyoshi Kuzuoka, Hiroshi Tsuji, Masaharu Kirihara, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) (5) 11:20 - 11:40 Electrical conduction characteristics of NiO thin films for ReRAM Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) (6) 11:40 - 12:00 Charge-Discharge Characteristics of Bio-Nano Dot Floating Gate MOS Devices with Ultrathin Tunnnel Oxide Tomoki Umeda, Hiroshi Yano, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (NAIST,Matsushita Electric Industrial Co.) ----- Break ( 60 min. ) ----- (7) 13:00 - 13:30 Effective Activation of Phosphorus atom in Si film using ELA Takashi Noguchi (Univ. of Ryukyus) (8) 13:30 - 13:50 In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.) (9) 13:50 - 14:10 Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) (10) 14:10 - 14:30 Axial orientation of epitaxially grown Fe3Si on Ge(111) Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) (11) 14:30 - 14:50 Ge n+/p Junction Formation with Xe+ Preamorphization Implantation Tetuya Fukunaga, Kentaro Shibahara (Hiroshima Univ. Grad. Sch.) (12) 14:50 - 15:10 Simulation of light propagation on silicide photonic crystals with conjugated inversion lattices Shunsuke Kunimatsu (Kyoto Univ.), Yoshikazu Terai (Osaka Univ.), Yoshihito Maeda (Kyoto Univ.) (13) 15:10 - 15:30 Interface modification by NH3 plasma in SiNx passivation for solar cell Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) ----- Break ( 20 min. ) ----- (14) 15:50 - 16:20 [Invited Talk] Optical properties of Si nanocrystals and their possible applications Minoru Fujii (Kobe Univ.) (15) 16:20 - 16:40 Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) (16) 16:40 - 17:00 Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) (17) 17:00 - 17:20 Neural Network of Device Level using Poly-Si TFT Ryo Onodera, Tomohiro Kasakawa, Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.), Hiroyuki Hara, Satoshi Inoue (Seiko Epson Corp.) (18) 17:20 - 17:40 Fabrication and Physical Properties of Ferroelectric Thin Films by Alcohol-related Materials Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) (19) 17:40 - 18:00 Active-Matrix Driving of Magneto Optic Spatial Light Modulator using Poly-Si TFT Hideo Oi, Mutsumi Kimura (Ryukoku Univ.), Yoichi Suzuki, Syogo Ishikawa, Hiromitsu Umezawa (FDK), Hiroyuki Takagi, Kim Joo-Young, Hironaga Uchida, Mitsuteru Inoue (Toyohashi Univ.of Tech.) === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Jan 24, 2008: Kikai-Shinko-Kaikan Bldg [unfixed], Topics: IEDM special review (Advanced CMOS device and process) Wed, Jan 30, 2008 - Thu, Jan 31, 2008: [Fri, Nov 9] Fri, Feb 8, 2008: Kikai-Shinko-Kaikan Bldg. [unfixed] Fri, Mar 14, 2008: Kikai-Shinko-Kaikan Bldg. [Mon, Jan 28] # SECRETARY: Yasushiro Nishioka (Nihon University, College of Science and Technology) TEL047-469-6482,FAX047-467-9504 E-mail:     e   t n-u ,a  cmsk  Last modified: 2007-10-30 12:12:22 |
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