Fri, Dec 14 AM 10:00 - 18:00 |
(1) |
10:00-10:20 |
Acceleration of Crystal Growth by Pulsed Rapid Thermal Annealing using Ni-Ferritin |
Masahiro Ochi, Yuuta Sugawara, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (Matsushita Electric Industrial Co.,Ltd., NAIST) |
(2) |
10:20-10:40 |
Shallow Junction Formed by Rapid Heat Treatment using Semiconductor Laser |
Toshiyuki Sameshima (Tokyo A&T Univ.), Naoki Sano (Hightec Systems Co.), M.Naito (Nissin Ion Equipment Co. Ltd) |
(3) |
10:40-11:00 |
Influence of laser-plasma x-ray irradiation on crystallization of a-Si film by excimer laser annealing |
Yasuyuki Takanashi, Naoto Matsuo, Kazuya Uejukkoku, Akira Heya (Dept.Mat.Sci.&Chem.,Univ.Hyogo), Sho Amano, Shuji Miyamoto, Takayasu Mochizuki (LASTI,Univ.Hyogo) |
(4) |
11:00-11:20 |
Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs using Device Simulation |
Tsuyoshi Kuzuoka, Hiroshi Tsuji, Masaharu Kirihara, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) |
(5) |
11:20-11:40 |
Electrical conduction characteristics of NiO thin films for ReRAM |
Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
(6) |
11:40-12:00 |
Charge-Discharge Characteristics of Bio-Nano Dot Floating Gate MOS Devices with Ultrathin Tunnnel Oxide (without presentation) |
Tomoki Umeda, Hiroshi Yano, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (NAIST,Matsushita Electric Industrial Co.) |
|
12:00-13:00 |
Break ( 60 min. ) |
(7) |
13:00-13:30 |
Effective Activation of Phosphorus atom in Si film using ELA |
Takashi Noguchi (Univ. of Ryukyus) |
(8) |
13:30-13:50 |
In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing |
Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.) |
(9) |
13:50-14:10 |
Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method |
Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) |
(10) |
14:10-14:30 |
Axial orientation of epitaxially grown Fe3Si on Ge(111) |
Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) |
(11) |
14:30-14:50 |
Ge n+/p Junction Formation with Xe+ Preamorphization Implantation |
Tetuya Fukunaga, Kentaro Shibahara (Hiroshima Univ. Grad. Sch.) |
(12) |
14:50-15:10 |
Simulation of light propagation on silicide photonic crystals with conjugated inversion lattices |
Shunsuke Kunimatsu (Kyoto Univ.), Yoshikazu Terai (Osaka Univ.), Yoshihito Maeda (Kyoto Univ.) |
(13) |
15:10-15:30 |
Interface modification by NH3 plasma in SiNx passivation for solar cell |
Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) |
|
15:30-15:50 |
Break ( 20 min. ) |
(14) |
15:50-16:20 |
[Invited Talk]
Optical properties of Si nanocrystals and their possible applications |
Minoru Fujii (Kobe Univ.) |
(15) |
16:20-16:40 |
Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes |
Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
(16) |
16:40-17:00 |
Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs |
Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) |
(17) |
17:00-17:20 |
Neural Network of Device Level using Poly-Si TFT |
Ryo Onodera, Tomohiro Kasakawa, Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.), Hiroyuki Hara, Satoshi Inoue (Seiko Epson Corp.) |
(18) |
17:20-17:40 |
Fabrication and Physical Properties of Ferroelectric Thin Films by Alcohol-related Materials |
Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) |
(19) |
17:40-18:00 |
Active-Matrix Driving of Magneto Optic Spatial Light Modulator using Poly-Si TFT |
Hideo Oi, Mutsumi Kimura (Ryukoku Univ.), Yoichi Suzuki, Syogo Ishikawa, Hiromitsu Umezawa (FDK), Hiroyuki Takagi, Kim Joo-Young, Hironaga Uchida, Mitsuteru Inoue (Toyohashi Univ.of Tech.) |