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| Chair |
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Tanemasa Asano (Kyushu Univ.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu) |
| Secretary |
|
Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
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Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
| Conference Date |
Fri, Dec 14, 2007 10:00 - 18:00 |
| Topics |
Silicon related material, process and device |
| Conference Place |
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Fri, Dec 14 AM
10:00 - 18:00 |
| (1) |
10:00-10:20 |
Acceleration of Crystal Growth by Pulsed Rapid Thermal Annealing using Ni-Ferritin  SDM2007-222 |
Masahiro Ochi, Yuuta Sugawara, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (Matsushita Electric Industrial Co.,Ltd., NAIST) |
| (2) |
10:20-10:40 |
Shallow Junction Formed by Rapid Heat Treatment using Semiconductor Laser SDM2007-223 |
Toshiyuki Sameshima (Tokyo A&T Univ.), Naoki Sano (Hightec Systems Co.), M.Naito (Nissin Ion Equipment Co. Ltd) |
| (3) |
10:40-11:00 |
Influence of laser-plasma x-ray irradiation on crystallization of a-Si film by excimer laser annealing SDM2007-224 |
Yasuyuki Takanashi, Naoto Matsuo, Kazuya Uejukkoku, Akira Heya (Dept.Mat.Sci.&Chem.,Univ.Hyogo), Sho Amano, Shuji Miyamoto, Takayasu Mochizuki (LASTI,Univ.Hyogo) |
| (4) |
11:00-11:20 |
Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs using Device Simulation SDM2007-225 |
Tsuyoshi Kuzuoka, Hiroshi Tsuji, Masaharu Kirihara, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) |
| (5) |
11:20-11:40 |
Electrical conduction characteristics of NiO thin films for ReRAM SDM2007-226 |
Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
| (6) |
11:40-12:00 |
Charge-Discharge Characteristics of Bio-Nano Dot Floating Gate MOS Devices with Ultrathin Tunnnel Oxide (without presentation) |
Tomoki Umeda, Hiroshi Yano, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (NAIST,Matsushita Electric Industrial Co.) |
| |
12:00-13:00 |
Break ( 60 min. ) |
| (7) |
13:00-13:30 |
Effective Activation of Phosphorus atom in Si film using ELA SDM2007-227 |
Takashi Noguchi (Univ. of Ryukyus) |
| (8) |
13:30-13:50 |
In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing SDM2007-228 |
Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.) |
| (9) |
13:50-14:10 |
Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method SDM2007-229 |
Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) |
| (10) |
14:10-14:30 |
Axial orientation of epitaxially grown Fe3Si on Ge(111) SDM2007-230 |
Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) |
| (11) |
14:30-14:50 |
Ge n+/p Junction Formation with Xe+ Preamorphization Implantation |
Tetuya Fukunaga, Kentaro Shibahara (Hiroshima Univ. Grad. Sch.) |
| (12) |
14:50-15:10 |
Simulation of light propagation on silicide photonic crystals with conjugated inversion lattices SDM2007-231 |
Shunsuke Kunimatsu (Kyoto Univ.), Yoshikazu Terai (Osaka Univ.), Yoshihito Maeda (Kyoto Univ.) |
| (13) |
15:10-15:30 |
Interface modification by NH3 plasma in SiNx passivation for solar cell SDM2007-232 |
Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) |
| |
15:30-15:50 |
Break ( 20 min. ) |
| (14) |
15:50-16:20 |
[Invited Talk]
Optical properties of Si nanocrystals and their possible applications |
Minoru Fujii (Kobe Univ.) |
| (15) |
16:20-16:40 |
Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes SDM2007-233 |
Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
| (16) |
16:40-17:00 |
Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs SDM2007-234 |
Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) |
| (17) |
17:00-17:20 |
Neural Network of Device Level using Poly-Si TFT SDM2007-235 |
Ryo Onodera, Tomohiro Kasakawa, Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.), Hiroyuki Hara, Satoshi Inoue (Seiko Epson Corp.) |
| (18) |
17:20-17:40 |
Fabrication and Physical Properties of Ferroelectric Thin Films by Alcohol-related Materials SDM2007-236 |
Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) |
| (19) |
17:40-18:00 |
Active-Matrix Driving of Magneto Optic Spatial Light Modulator using Poly-Si TFT SDM2007-237 |
Hideo Oi, Mutsumi Kimura (Ryukoku Univ.), Yoichi Suzuki, Syogo Ishikawa, Hiromitsu Umezawa (FDK), Hiroyuki Takagi, Kim Joo-Young, Hironaga Uchida, Mitsuteru Inoue (Toyohashi Univ.of Tech.) |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E- :    e   t n-u ,a  cmsk  |
Last modified: 2007-10-30 12:12:22
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