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Technical Committee on Component Parts and Materials (CPM)
Chair: Yasushi Takemura (Yokohama National Univ.) Vice Chair: Yasushi Takano (Shizuoka Univ.)
Secretary: Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.)
Assistant: Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.)
DATE:
Wed, Oct 26, 2011 13:00 - 17:15
Thu, Oct 27, 2011 09:30 - 11:10
PLACE:
(http://www.u-fukui.ac.jp/eng/access/index.html. Prof. Akio Yamamoto)
TOPICS:
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Wed, Oct 26 PM (13:00 - 17:15)
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(1) 13:00 - 13:25
Structual characterization of CuAlO2 films deposited by reactive sputtering using composite target
Takuya Yokomoto, Yosuke Maeda, Takumi Miyazawa, Tomohiko Yamakami, Katsuya Abe (SinshuUniv.)
(2) 13:25 - 13:50
Examination of ITO Thin Films for Flexible-OLEDs at Low-Voltage Driving
Chang Liu, Hiroaki Matsui, Takaaki Kibushi, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.)
(3) 13:50 - 14:15
Properties of AZO Thin Films Deposited at Room Temperature by the RF-DC Coupled Magnetron Sputtering Method
Jun Kashiide, Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Kotaro Nagata, Yasuo Fukushima, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.)
----- Break ( 15 min. ) -----
(4) 14:30 - 14:55
Investigation of THz-wave emission from the stacked intrinsic Josephson junctions in a Bi2Sr2CaCu2Ox single crystal
Takahiro Kato, Takeshi Asano, Satoru Sunaga (Nagaoka Univ. Tech1), Akira Kawakami (NICT), Kanji Yasui, Katsuyoshi Hamasaki (Nagaoka Univ. Tech1)
(5) 14:55 - 15:20
MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range
Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
(6) 15:20 - 15:45
Anti-corrosive stainless steel separator coated with MOCVD InGaN for polymer electrolyte fuel cell (PEFC)
Masanori Shimahashi (Eyetec), Kazuya Matsui (Univ. of Fukui), Koji Okada (Eyetec), Kenichi Sugita (Univ. of Fukui), Hajime Sasaki (Eyetec), Akio Yamamoto (Univ. of Fukui)
----- Break ( 15 min. ) -----
(7) 16:00 - 16:25
Fabrication of thin films of new alloy semiconductor CuxZnyS by the photochemical deposition method
Dula Man, Masaya Ichimura (NIT)
(8) 16:25 - 16:50
Fabrication of silicon solar cells with low impurity Si with transition metal contaminants
Daiki Takeda, Satoru Tuduki, Katsuaki Momiyama, Kensaku Kanomata, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)
(9) 16:50 - 17:15
Formation of NiSi silicide and its application to Cu contacts
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.)
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Thu, Oct 27 AM (09:30 - 11:10)
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(10) 09:30 - 09:55
Growth of SiC films by HW-CVD using graphite filaments coated with SiC
Yuya Sakaguchi, Ryohei Ushikusa, Takuu Syu, Tomohiko Yamakami, Katsuya Abe (Shinshu Univ)
(11) 09:55 - 10:20
Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS
Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)
(12) 10:20 - 10:45
MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content
Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.)
(13) 10:45 - 11:10
MOVPE growth of InN using NH3 decomposition catalyst
Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui)
# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:
Thu, Nov 17, 2011 - Fri, Nov 18, 2011: Katsura Hall，Kyoto Univ. [Fri, Sep 16]
Mon, Nov 28, 2011 - Wed, Nov 30, 2011: NewWelCity Miyazaki [Thu, Sep 1], Topics: Design Gaia 2010 -New Field of VLSI Design-
Last modified: 2011-08-23 13:43:39
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