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| Chair |
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Yasushi Takemura (Yokohama National Univ.) |
| Vice Chair |
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Yasushi Takano (Shizuoka Univ.) |
| Secretary |
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Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.) |
| Assistant |
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Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.) |
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Wed, Oct 26 PM
13:00 - 17:15 |
| (1) |
13:00-13:25 |
Structual characterization of CuAlO2 films deposited by reactive sputtering using composite target |
Takuya Yokomoto, Yosuke Maeda, Takumi Miyazawa, Tomohiko Yamakami, Katsuya Abe (SinshuUniv.) |
| (2) |
13:25-13:50 |
Examination of ITO Thin Films for Flexible-OLEDs at Low-Voltage Driving |
Chang Liu, Hiroaki Matsui, Takaaki Kibushi, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) |
| (3) |
13:50-14:15 |
Properties of AZO Thin Films Deposited at Room Temperature by the RF-DC Coupled Magnetron Sputtering Method |
Jun Kashiide, Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Kotaro Nagata, Yasuo Fukushima, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) |
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14:15-14:30 |
Break ( 15 min. ) |
| (4) |
14:30-14:55 |
Investigation of THz-wave emission from the stacked intrinsic Josephson junctions in a Bi2Sr2CaCu2Ox single crystal |
Takahiro Kato, Takeshi Asano, Satoru Sunaga (Nagaoka Univ. Tech1), Akira Kawakami (NICT), Kanji Yasui, Katsuyoshi Hamasaki (Nagaoka Univ. Tech1) |
| (5) |
14:55-15:20 |
MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range |
Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
| (6) |
15:20-15:45 |
Anti-corrosive stainless steel separator coated with MOCVD InGaN for polymer electrolyte fuel cell (PEFC) |
Masanori Shimahashi (Eyetec), Kazuya Matsui (Univ. of Fukui), Koji Okada (Eyetec), Kenichi Sugita (Univ. of Fukui), Hajime Sasaki (Eyetec), Akio Yamamoto (Univ. of Fukui) |
| |
15:45-16:00 |
Break ( 15 min. ) |
| (7) |
16:00-16:25 |
Fabrication of thin films of new alloy semiconductor CuxZnyS by the photochemical deposition method |
Dula Man, Masaya Ichimura (NIT) |
| (8) |
16:25-16:50 |
Fabrication of silicon solar cells with low impurity Si with transition metal contaminants |
Daiki Takeda, Satoru Tuduki, Katsuaki Momiyama, Kensaku Kanomata, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) |
| (9) |
16:50-17:15 |
Formation of NiSi silicide and its application to Cu contacts |
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) |
Thu, Oct 27 AM
09:30 - 11:10 |
| (10) |
09:30-09:55 |
Growth of SiC films by HW-CVD using graphite filaments coated with SiC |
Yuya Sakaguchi, Ryohei Ushikusa, Takuu Syu, Tomohiko Yamakami, Katsuya Abe (Shinshu Univ) |
| (11) |
09:55-10:20 |
Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS |
Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) |
| (12) |
10:20-10:45 |
MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content |
Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) |
| (13) |
10:45-11:10 |
MOVPE growth of InN using NH3 decomposition catalyst |
Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
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| Contact Address |
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Last modified: 2011-08-23 13:43:39
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