Wed, Jan 13
13:00 - 16:15 |
| (1) |
13:00-13:25 |
Design of a Compact UWB Bandpass Filter Using a Microstrip Five-Mode Step-Impedance Resonator |
Akihito Beppu, Zhewang Ma (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.) |
| (2) |
13:25-13:50 |
BIT Line Filter Consisting of FR-4 Substrate at 30GHz |
Yusuke Omote, Futoshi Kuroki (KNCT) |
| (3) |
13:50-14:15 |
Evaluation of the phase disaplacement delta by the complex permittivity measuring with resonators |
Jun-ichi Sugiyama (AIST) |
| |
14:15-14:25 |
Break ( 10 min. ) |
| (4) |
14:25-14:50 |
Wide-band spurious-response suppression using 4-pole coplanar-waveguide resonator filters |
Takahiro Nagafuku, Hiroyuki Deguchi, Mikio Tsuji (Doshisha Univ.), Hirotaka Fujita (SHARP) |
| (5) |
14:50-15:15 |
An All-Pass/Capacitive-Coupled BPF MMIC Phase Shifter |
Ryota Komaru, Masatake Hangai, Koichi Shigenaga, Mamiko Yamaguchi, Morishige Hieda (Mitsubishi Electric Corp.) |
| |
15:15-15:25 |
Break ( 10 min. ) |
| (6) |
15:25-15:50 |
Novel Left-Handed Waveguides |
Hiroaki Ikeuchi, Isao Ohta (Univ. of Hyogo), Mitsuyoshi Kishihara (Okayama Pre. Univ.), Tadashi Kawai (Univ. of Hyogo), Satoshi Matsumoto (Furuno Electric Co. Ltd.) |
| (7) |
15:50-16:15 |
Analytical and Experimental Considerations on Locking Characteristics of Band-stop Type of Self-injection Locked NRD Guide Gunn Oscillator at 60GHz |
Koichi Oue, Futoshi Kuroki (Kure Nat'l Coll. of Tech.), Tsukasa Yoneyama (Tohoku Inst. of Tech.) |
Thu, Jan 14
10:00 - 15:55 |
| (8) |
10:00-10:25 |
InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric |
Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) |
| (9) |
10:25-10:50 |
Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density |
Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) |
| (10) |
10:50-11:15 |
AlGaN/GaN HEMT having periodic mesa-gate structure |
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) |
| |
11:15-13:00 |
Lunch ( 105 min. ) |
| (11) |
13:00-13:40 |
[Invited Talk]
Development of high-performance ZnO-based FETs
-- Device applications and microwave performance -- |
Shigehiko Sasa, Kazuto Koike, Toshihiko Maemoto, Mitsuaki Yano, Masataka Inoue (Osaka Inst. of Tech.) |
| (12) |
13:40-14:05 |
Interface characterization of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures |
Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) |
| (13) |
14:05-14:30 |
Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs |
Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
| |
14:30-14:40 |
Break ( 10 min. ) |
| (14) |
14:40-15:05 |
Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers |
Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.) |
| (15) |
15:05-15:30 |
AlGaN channel high electron mobility transistors on AlN substrates. |
Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata (SEI), Kenichiro Takeda, Hiroshi Amano (Meijo Univ.) |
| (16) |
15:30-15:55 |
A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity |
Kazuki Ota, Kazuomi Endo, Yasuhiro Okamoto, Yuji Ando, Hironobu Miyamoto, Hidenori Shimawaki (NEC Corp.) |
Fri, Jan 15
09:30 - 12:10 |
| (17) |
09:30-09:55 |
A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs |
Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs), Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) |
| (18) |
09:55-10:20 |
A 32-GS/s 6-bit Double-Sampling DAC in InP HBT Technology |
Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.) |
| (19) |
10:20-10:45 |
Pseudo Sinusoidal Generator with PVT Compensation Circuit using InP HBTs
-- For Linear Control of Vector-Sum Phase Shifter -- |
Hideyuki Nosaka, Munehiko Nagatani, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.) |
| |
10:45-10:55 |
Break ( 10 min. ) |
| (20) |
10:55-11:20 |
A Low-Voltage, Broadband Operation HBT Power Amplifier for CDMA Applications |
Kazuya Yamamoto, Atsushi Okamura, Takayuki Matsuzuka, Yutaka Yoshii, Satoshi Suzuki, Masatoshi Nakayama, Teruyuki Shimura, Naohito Yoshida (Mitsubishi Electric Corp.) |
| (21) |
11:20-11:45 |
An X-band GaN HEMT T/R Switch with 50% Bandwidth |
Masatake Hangai, Yukinobu Tarui, Yoshitaka Kamo, Morishige Hieda (Mitsubishi Electric Corp.) |
| (22) |
11:45-12:10 |
Cost Effective Wafer-Level Chip Size Package Technology and Application for High Speed Wireless Communications. |
Seiji Fujita, Masaki Imagawa, Tomio Satoh (SEDI), Tsuneo Tokumitsu (SEI), Yuichi Hasegawa (SEDI) |
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