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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tetsuro Endo (Tohoku Univ.) Vice Chair: Yasuo Nara (Fujitsu Semiconductor) Secretary: Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba) Assistant: Yoshitaka Sasago (Hitachi) DATE: Fri, Dec 16, 2011 10:00 - 17:20 PLACE: TOPICS: Fabrication and Evaluation of Silicon related Materials ---------------------------------------- Fri, Dec 16 AM (10:00 - 17:20) ---------------------------------------- (1) 10:00 - 10:20 Effect of High Pressure Water Vapor Annealing on the optical properties of ZnS-based inorganic EL phosphor Takuya Kontani, Mao Taniguchi, Masahiro Horita (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) (2) 10:20 - 10:40 Basic characteristics of distributed inorganic EL panels with multi-planar electrodes array Toshihiro Nonaka (Ryukoku Univ.), Yukiharu Uraoka (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Shinichi Yamamoto (Ryukoku Univ.) (3) 10:40 - 11:00 Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) (4) 11:00 - 11:20 Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) (5) 11:20 - 11:40 Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy Seiji Nishikawa, Ryota Okada, Hideharu Matsuura (Osaka Electro-Communication univ.) (6) 11:40 - 12:00 Selective nanoscale positioning of Co nanoparticles on Ti and SiO2 Surfaces Satoshi Itakura (Ryukoku Univ.), Hirohumi Yamada (Kyoto Univ.), Yukiharu Uraoka (NAIST), Ichiro Yamashita (ATRL Panasonic), Shinichi Yamamoto (Ryukoku Univ.) ----- Break ( 60 min. ) ----- (7) 13:00 - 13:30 [Invited Talk] Si sputtering epitaxy and its application to fabrication of monocrystalline Si solar cells Wenchang Yeh (Shimane Univ.), Yupin Fang, Hsiangen Huang (NTUST) (8) 13:30 - 14:00 [Invited Talk] Influence of subgap density of states on electrical properties and reliability of ZnO TFT. Mamoru Furuta, Shin-ichi Shimakawa (Kochi Univ. of Tech.) (9) 14:00 - 14:20 Fabrication of 2D Photonic-Crystal by ZnO using Gel-Nanoimprint Process Min Zhang, Shinji Araki, Li Lu, Masahiro Horita, Takashi Nishida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) (10) 14:20 - 14:40 Thermal Sensor Using Poly-Si Thin-Film Transistor Jun Taya, Tomonori Mukuda, Akihiro Nakashima, Mutsumi Kimura (Ryukoku Univ.) (11) 14:40 - 15:00 Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors Toshifumi Ota, Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) ----- Break ( 20 min. ) ----- (12) 15:20 - 15:40 Development of Process Simulators for Laser Crystallization -- Development of 2-Dimensional and 3-Dimentional Simulators -- Mutsumi Kimura, Kuniaki Matsuki, Ryusuke Saito, Shuji Tsukamoto (Ryukoku Univ.) (13) 15:40 - 16:00 Proposal of Optimized Structure of X-Ray Detectors Reducing Effect of Fixed Charges at SiO2/Si interface Ryota Okada, Seiji Nishikawa, Hideharu Matsuura (Osaka Electro-Communication Univ.) (14) 16:00 - 16:20 Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) (15) 16:20 - 16:40 Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) (16) 16:40 - 17:00 Charge Retentivity of DNAFET Shogo Takagi, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ of Hyogo), Shin Yokoyama (Hiroshima Univ) (17) 17:00 - 17:20 Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) # Information for speakers General Talk will have 15 minutes for presentation and 5 minutes for discussion. Invited Talk will have 25 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Tue, Feb 7, 2012 - Wed, Feb 8, 2012: [Tue, Nov 15] Mon, Mar 5, 2012: Kikai-Shinko-Kaikan Bldg. , Topics: Wiring and Assembly Technology, etc # SECRETARY: Yukinori Ono(NTT) Tel 046-240-2641 Fax 046-240-4317 E-mail: o          Last modified: 2011-12-10 22:02:45 |
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