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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.)
Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant: Hiroya Ikeda (Shizuoka Univ.)

DATE:
Mon, Feb 6, 2017 10:05 - 16:45

PLACE:

TOPICS:
Interconnects, Package and related materials

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Mon, Feb 6 AM (10:00 - 16:45)
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----- Opening ( 5 min. ) -----

(1) 10:05 - 10:40
[Invited Talk]
Impact of Dry Process Damage on Chemical Mechanical Planarization with Cu/low-k Structure
Masako Kodera, Hiroyuki Yano, Naoto Miyashita (Toshiba)

(2) 10:40 - 11:15
[Invited Talk]
Fabrication of High-Quality Metalic Films for ULSI by ALD
Yukihiro Shimogaki (UTokyo)

(3) 11:15 - 11:50
[Invited Talk]
NiGe/Ge contact formation by microwave annealing method for low-thermal budget processing
Osamu Nakatsuka (Grad. Sch. of Eng., Nagoya University), Yoshimasa Watanabe (TEL), Akihiro Suzuki (Grad. Sch. of Eng., Nagoya University), Yoshio Nishi (Dept. of Electrical Engineering, Stanford University), Shigeaki Zaima (IMaSS, Nagoya University)

----- Lunch ( 70 min. ) -----

(4) 13:00 - 13:35
[Invited Talk]
Huge-potential need to the memory-system for ultra-long term preservation and its issues
-- Development of the WASHI in digital era --
Toshio Kobayashi (SIT)

(5) 13:35 - 14:10
[Invited Talk]
Electrical coupling of stacked transistors in monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness
Junichi Hattori, Koichi Fukuda, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda (AIST)

(6) 14:10 - 14:45
[Invited Talk]
Large Scale Crossbar Switch Block (CSB) with Via-Switch for a Low-Power FPGA
Naoki Banno, Munehiro Tada, Koichiro Okamoto, Noriyuki Iguchi, Toshitsugu Sakamoto, Hiromitsu Hada (NEC Corp.), Hiroyuki Ochi (Ritsumeikan Univ.), Hidetoshi Onodera (Kyoto Univ.), Masanori Hashimoto (Osaka Univ.), Tadahiko Sugibayashi (NEC Corp.)

----- Break ( 15 min. ) -----

(7) 15:00 - 15:35
[Invited Talk]
Properties of amorphous Co alloys having liner/barrier function in advanced LSI interconnection
Maryamsadat Hosseini, Hiroyuki Koide, Kazuki Watanabe, Daisuke Ando, Yuji Sutou, Junichi Koike (Tohoku Univ.)

(8) 15:35 - 16:10
[Invited Talk]
Development of a Wet Cleaning Process for High-Yield Formation of via-last TSVs
Naoya Watanabe (AIST), Hidekazu Kikuchi, Azusa Yanagisawa (LAPIS), Haruo Shimamoto, Katsuya Kikuchi, Masahiro Aoyagi (AIST), Akio Nakamura (LAPIS)

(9) 16:10 - 16:45
[Invited Talk]
Direct Cu metallization on TGV Glass substrate using Wet Process.
Kotoku Inoue, Masatoshi Takayama, Tsubasa Fujimura, Shigeo Onitake (Koto)

----- Closing ( 5 min. ) -----

# Information for speakers
Invited Talk will have 25 minutes for presentation and 10 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Fri, Feb 24, 2017: Centennial Hall, Hokkaido Univ. [Fri, Dec 16], Topics: Functional nanodevices and related technologies
Thu, Apr 20, 2017 - Fri, Apr 21, 2017: Tatsugochou Shougaigakushuu Center [Sun, Feb 19], Topics: Organic molecular devices, silicon device, biotechnology, thin film device, novel material, evaluation method, etc
Thu, May 25, 2017 - Fri, May 26, 2017: VBL, Nagoya University [Wed, Mar 15]

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail: