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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics)
Secretary: Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant: Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT)

DATE:
Thu, Oct 29, 2009 14:00 - 19:45
Fri, Oct 30, 2009 09:30 - 16:15

PLACE:
New Industry Creation Hatchery Center (NICHE)(Aza-Aoba6-6-10, Aramaki, Aobaku, Sendai, 980-8579, Japan. http://www.fff.niche.tohoku.ac.jp/index_e.html. Tohoku University Ass. Prof. Tetsuya Goto. +81-22-795-3977)

TOPICS:
Semiconductor process science and new technology

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Thu, Oct 29 PM (14:00 - 19:45)
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(1) 14:00 - 14:30
High current drivability transistors with optimized silicides for n+- and p+-Si
Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ)

(2) 14:30 - 15:00
A study on Improvement of Thermal Stability for PtSi Alloying with Hf Utilizing Two-Step Silicidation Process
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)

(3) 15:00 - 15:30
HfN/HfON Gate Stacks by ECR Sputtering
Takahiro Sano, Takato Ohnishi, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)

(4) 15:30 - 16:00
Silicon Wafer Thinning Technology for Three-Dimensional Integrated Circuit by Wet Etching
Kazuhiro Yoshikawa, Tomotsugu Ohashi, Tatsuro Yoshida, Takenao Nemoto, Tadahiro Ohmi (Tohoku Univ.)

----- Break ( 15 min. ) -----

(5) 16:15 - 16:45
Tribological Study for Low Shear Force CMP Process on Damascene Interconnects
Xun Gu, Takenao Nemoto (Tohoku Univ.), Yasa Adi Sampurno (Univ. of Arizona/Araca,Inc.), Jiang Cheng, Sian Theng (Araca,Inc.), Akinobu Teramoto (Tohoku Univ.), Ricardo Duyos Mateo, Leonard Borucki (Araca,Inc.), Yun Zhuang, Ara Philipossian (Univ. of Arizona/Araca,Inc.), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

(6) 16:45 - 17:15
Current Voltage Characteristics of Si-MESFET on SOI Substrate
Toshiyuki Abe, Yuichiro Tanushi, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.)

(7) 17:15 - 17:45
Statistical Analysis of Random Telegraph Signal Using a Large-Scale Array TEG with a Long Time Measurement
Takafumi Fujisawa, Kenichi Abe, Syunichi Watabe, Naoto Miyamoto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

----- Banquet ( 120 min. ) -----

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Fri, Oct 30 AM (09:30 - 16:15)
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(8) 09:30 - 10:00
An Analysis of Carrier Transfer in Conjugated Polymers by Luminescence Computational Chemistry
Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Ai Suzuki, Ryuji Miura, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ)

(9) 10:00 - 10:30
Computational Simulation for High Performance Protecting Layer of Plasma Displays
Kazumi Serizawa, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Kazuma Suesada, Masaki Kitagaki (Hiroshima Univ.), Itaru Yamashita, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.)

(10) 10:30 - 11:00
Prediction of emission peak wavelength of Eu2+-doped phosphors using quantum chemistry and QSPR method
Hiroaki Onuma, Itaru Yamashita, Kazumi Serizawa, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

(11) 11:00 - 11:30
Investigation of characteristics of pentacene-based MOSFETs structures
Young-Uk Song, Shun-ichiro Ohmi, Hiroshi Ishiwara (Tokyo Inst. of Tech.)

(12) 11:30 - 12:00
Crystallization of Amorphous Silicon Films on Glass Substrate by Heated Gas Beam Annealing
Yuichiro Tanushi, Yosuke Kawano, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ), Naomi Mura, Kimihisa Yamakami, Yuji Furumura (Philtech Inc.), Takashi Ito (Tohoku Univ)

----- Lunch ( 60 min. ) -----

(13) 13:00 - 13:30
Recovery from Reactive Ion Etching Damage in SiO2 Films
Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.)

(14) 13:30 - 14:00
Low frequency noise in Si(100) and Si(110) p-channel MOSFETs
Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)

(15) 14:00 - 14:30
A study on improvement of electrical characteristics for low temperature SiO2 film
Hidenobu Nagashima, Hiroshi Akahori (TOSHIBA)

----- Break ( 15 min. ) -----

(16) 14:45 - 15:15
Electrochemical Etching Processes of Semiconductors
Kingo Itaya, Shinichirou Kobayashi, Rui Wen, Taketoshi Minato (Tohoku Univ.)

(17) 15:15 - 15:45
Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method
Hideyuki Tsuboi, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)

(18) 15:45 - 16:15
Study on compositional transition layers at SiO2/Si interface formed by radical oxidation
Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro, Yukako Kato (JASRI)

# Information for speakers
General Talk will have 20 minutes for presentation and 10 minutes for discussion.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Nov 12, 2009 - Fri, Nov 13, 2009: Kikai-Shinko-Kaikan Bldg. [Fri, Sep 11], Topics: Process, Device, Circuit Simulation, etc.
Fri, Dec 4, 2009: NAIST [Fri, Oct 9], Topics: Fabrication, Evaluation for Si Related Materials,

# SECRETARY:
Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-mail: Hi