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研究会終了後に懇親会を開催いたします．

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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara (Fujitsu Semiconductor) Vice Chair: Yuzou Oono (Tohoku Univ.)
Secretary: Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

DATE:
Thu, Jun 21, 2012 09:00 - 18:00

PLACE:
VBL, Nagoya University(Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan. http://www.vbl.nagoya-u.ac.jp/access/index.html. Prof. Seiichi Miyazaki. +81-52-789-3588)

TOPICS:
Science and Technology for Dielectric Thin Films for Electron Devices

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Thu, Jun 21 AM (09:00 - 18:00)
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(1) 09:00 - 09:20
Evaluation of Chemical Structures and Resistive Switching Behaviors of Pt/Si rich Oxide/TiN System
Motoki Fukusima (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

(2) 09:20 - 09:40
Resistive Switching Properties of Directly Bonded SrTiO3 Substrate
Ryota Asada, Pham Phu Thanh Son, Kokate Nishad Vasant, Jun Kikkawa, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.)

(3) 09:40 - 10:00
Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures
Mitsuhisa Ikeda (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

(4) 10:00 - 10:20
Nanodot-type Floating Gate Memory with High-density Nanodot Array Formed Utilizing Listeria Dps
Hiroki Kamitake, Kosuke Ohara, Mutsunori Uenuma, Bin Zheng, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST)

(5) 10:20 - 10:40
High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics
Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)

----- Break ( 15 min. ) -----

(6) 10:55 - 11:15
Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(7) 11:15 - 11:35
Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer
Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)

(8) 11:35 - 11:55
Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(9) 11:55 - 12:15
Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks
Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)

(10) 12:15 - 12:35
Evaluation of Al atoms as a function of annealing temperature for (TaC)1-xAlx/HfO2 gate stack
Masayuki Kimura (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi, Toshihiro Narushima, Toyohiro Chikyow (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.)

----- Lunch Break ( 60 min. ) -----

(11) 13:35 - 13:55
Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method
Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU)

(12) 13:55 - 14:15
Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion
Akio Ohta, Masafumi Matsui, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)

(13) 14:15 - 14:35
Relation between Schottky-barrier change and structural disorders at metal/(Si,Ge) interfaces: First-principles study
Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.)

----- Short Break ( 10 min. ) -----

(14) 14:45 - 15:05
Chemical Analysis of As+-implanted Ge(100)
Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)

(15) 15:05 - 15:30
Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions
Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.)

(16) 15:30 - 15:55
Schottky Barrier Height Lowering by Dopant Segregation and Exact Control of Junction Position in Epitaxial NiSi2 Source/Drain
Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST)

(17) 15:55 - 16:20
Doping and behaviors of impurity atoms in silicon nanowires
-- Segregation behaviors of dopant atoms during thermal oxidation --
Naoki Fukata (NIMS), Ryo Takiguchi, Shinya Ishida, Shigeki Yokono (Univ. of Tsukuba), Takashi Sekiguchi (NIMS), Kouichi Murakami (Univ. of Tsukuba)

----- Break ( 15 min. ) -----

(18) 16:35 - 16:55
Interface controlled silicide Schottky S/D for future 3D devices
Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech)

(19) 16:55 - 17:15
Formation of Extremely Thin Ni-InGaAs Alloyed Contact for Scaled InGaAs MOSFETs and its Thermal Stability
Toshifumi Irisawa, Minoru Oda, Tsutomu Tezuka (AIST)

(20) 17:15 - 17:40
Alleviation of Fermi level pinning for TiN/Ge contact and its application to MOS device
Keisuke Yamamoto, Masatoshi Iyota, Dong Wang, Hiroshi Nakashima (Kyushu Univ.)

(21) 17:40 - 18:00
Control of junction property at the diamond/metal interface
-- The present results and problems of p-type and n-type diamond --
Tsubasa Matsumoto (Tsukuba Univ.), Hiromitsu Kato, Masahiko Ogura, Daisuke Takeuchi, Toshiharu Makino, Hideyo Okushi, Satoshi Yamasaki (AIST)

# Information for speakers
General Talk will have 15 minutes for presentation and 5 minutes for discussion.
Encouragement Talk will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 20 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Wed, Jun 27, 2012 - Fri, Jun 29, 2012: Okinawa Seinen-kaikan [Fri, Apr 20], Topics: 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
Thu, Aug 2, 2012 - Fri, Aug 3, 2012: Sapporo Center for Gender Equality, Sapporo, Hokkaido [Mon, May 14], Topics: Low-power, low-voltage device and circuit technology

# SECRETARY:
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-mail: o