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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tanemasa Asano Vice Chair: Toshihiro Sugii Secretary: Morifumi Ohno, Shigeru Kawanaka Assistant: Yuichi Matsui DATE: Thu, Mar 15, 2007 13:00 - 16:45 PLACE: Kikai-Shinko-Kaikan Bldg. TOPICS: ---------------------------------------- Thu, Mar 15 PM (13:00 - 16:45) ---------------------------------------- ----- Opening address ( 5 min. ) ----- (1) 13:05 - 13:30 Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas) (2) 13:30 - 13:55 Reset switching mechanism of ReRAM using thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.) (3) 13:55 - 14:20 SiO2/SiOx/SiC/Si MIS Resistive Nonvolatile Memory Yoshiyuki Suda, Hiromi Hasegawa (Tokyo Univ. of Agric. & Technol.) (4) 14:20 - 14:45 Impact of three-dimensional transistor on the pattern area reduction for high density ULSI Shigeyoshi Watanabe, Keisuke Okamoto, Yuu Hiroshima, Ｋｅｉｓｕｋｅ Ｋｏｉｚｕｍｉ, Makoto Oya (SIT) ----- Break ( 15 min. ) ----- (5) 15:00 - 15:25 [Invited Talk] (111)-Oriented SrRuO3/Pt Bottom Electrode for Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O3 Films for High Density Ferroelectric Random Access Niclus Menou (Tokyo Inst. of Tech.), Hiroki Kuwabara, Hiroshi Funakubo (Tokyo Tech.) (6) 15:25 - 15:50 Key Process Technology of Reliable Sub Micron Capacitor for High Density Chain-FeRAM Koji Yamakawa, Tohru Ozaki, Hiroyuki Kanaya, Iwao Kunishima, Yoshinori Kumura, Yoshiro Shimojo, Susumu Shuto, Osamu Hidaka, Yuki Yamada, Soi chi Yamazaki, Takeshi Hamamoto, Shinichiro Shiratake, Daisaburo Takashima, Tadashi Miyakawa, Sumito Ohtsuki (Toshiba) (7) 15:50 - 16:15 Development of Microwave-Excited Plasma Enhanced Metal-Organic Chemical Vapor deposition System and Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Film Ichirou Takahashi, Kiyoshi Funawa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) (8) 16:15 - 16:40 Design method of low-power dual-supply-voltage system LSI taking into account various leakage current of MOSFET Shigeyoshi Watanabe, Satoshi Hanami, Manabu Kobayashi, Toshinori Takabatake (SIT) ----- closing ( 5 min. ) ----- === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Apr 20, 2007: [Fri, Feb 23] Thu, May 24, 2007 - Fri, May 25, 2007: Shizuoka Univ. [Thu, Mar 15] Thu, Jun 7, 2007 - Fri, Jun 8, 2007: Hiroshima Univ. ( Faculty Club) [Fri, Apr 13], Topics: Sci. & Technol. for Thin Dielectrics for MIS Devices Mon, Jun 25, 2007 - Wed, Jun 27, 2007: Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Thu, Apr 12], Topics: 2007 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007) # SECRETARY: Morifumi Ohno (Oki Electric Industry Co., Ltd.) TEL：042-664-6680,FAX：042-667-8367 E-mail : oh  565 o  Last modified: 2007-01-31 19:04:41 |
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