ken-system: Advance Program

IEICE Technical Committee Submission System
Advance Program

Online Proceedings
[Sign in]
Tech. Rep. Archives

===============================================
Technical Committee on Electron Device (ED)
Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba)
Secretary: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant: Manabu Arai (New JRC), Masataka Higashiwaki (NICT)

DATE:
Wed, Jan 20, 2016 10:30 - 16:20

PLACE:

TOPICS:
Power Devices and High-frequency Devices, Microwave, etc.

----------------------------------------
Wed, Jan 20 AM (10:30 - 16:20)
----------------------------------------

(1) 10:30 - 10:55
[Invited Lecture]
Evaluation technology for SiC wafer and device characteristics
Makoto Kitabatake (FUPET)

(2) 10:55 - 11:20
[Invited Lecture]
Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric)

(3) 11:20 - 11:45
[Invited Lecture]
State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura)

----- Break ( 105 min. ) -----

(4) 13:30 - 13:55
[Invited Lecture]
The unique features of GaN power devices and the technologies to utilize their innate advantages
Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM)

(5) 13:55 - 14:20
[Invited Lecture]
Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model
-- Comparison of semiconductor materials --
Toshiyuki Oishi, Makoto Kasu (Saga Univ.)

(6) 14:20 - 14:45
[Invited Lecture]
GaN Schottky Barrier Diode and Microwave Power Transmission
Yasuo Ohno (LaS)

----- Break ( 20 min. ) -----

(7) 15:05 - 15:30
[Invited Lecture]
Improvement in fmax of InP-based HEMTs for THz ICs
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.)

(8) 15:30 - 15:55
Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell
Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric)

(9) 15:55 - 16:20
[Invited Lecture]
Development of GaN-HEMT for Microwave Applications
Takahisa Kawai (SEDI)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Invited Lecture will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Mar 3, 2016 - Fri, Mar 4, 2016: Centennial Hall, Hokkaido Univ. [Fri, Dec 18], Topics: Functional Nanodevices and Related Technologies
Thu, Apr 21, 2016 - Fri, Apr 22, 2016:

# SECRETARY:
Koji Matsunaga（NEC)
TEL：+81-44-435-8348 FAX：+81-44-455-8253
E-mail： k-