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=============================================== Technical Committee on Electron Devices (ED) Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba) Secretary: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC) Assistant: Masataka Higashiwaki (NICT), Toshiyuki Oishi (Saga Univ.) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Satoru Noge (Numazu National College of Tech.) Vice Chair: Fumihiko Hirose (Yamagata Univ.) Secretary: Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.) Assistant: Takashi Sakamoto (NTT), Yuichi Nakamura (Toyohashi Univ. of Tech.) =============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Susumu Noda (Kyoto Univ.) Vice Chair: Tsuyoshi Yamamoto (Fujitsu Labs.) Secretary: Naoki Fujiwara (NTT), Takashi Katagiri (Tohoku Univ.) DATE: Mon, Dec 12, 2016 13:00 - 17:25 Tue, Dec 13, 2016 08:40 - 15:30 PLACE: Katsura campus, Kyoto University(Katsura Hall is located in 1F of the adsiministration building.Prof. Shizuo Fujita. +81-75-383-3075) TOPICS: Nitride semiconductors, optoelectronic devices, and related materials ---------------------------------------- Mon, Dec 12 PM (13:00 - 17:25) ---------------------------------------- (1) 13:00 - 13:25 Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) (2) 13:25 - 13:50 Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) (3) 13:50 - 14:15 Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.) (4) 14:15 - 14:40 Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) (5) 14:40 - 15:05 Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) ----- Break ( 15 min. ) ----- (6) 15:20 - 15:45 Evaluating Current Collapse of GaN HEMT devices by Carrier Number Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) (7) 15:45 - 16:10 Normally-off operation of planar GaN MOS-HFET Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) (8) 16:10 - 16:35 AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) (9) 16:35 - 17:00 Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki (Univ. Fukui) (10) 17:00 - 17:25 Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) ---------------------------------------- Tue, Dec 13 AM (08:40 - 09:55) ---------------------------------------- (11) 08:40 - 09:05 Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) (12) 09:05 - 09:30 MOCVD growth of rough-surface p-GaN and its application to InGaN/GaN MQW solar cells Takuma Mori, Makoto Miyoshi, Takashi Egawa (NIT) (13) 09:30 - 09:55 Growth and optical properties of semipolar AlGaN/AlN quantum wells on m-plane sapphire substrates Issei Oshima (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN) ----- Break ( 10 min. ) ----- ---------------------------------------- Tue, Dec 13 AM (10:05 - 11:45) ---------------------------------------- (14) 10:05 - 10:30 Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) (15) 10:30 - 10:55 Crystal growth of bulk AlN by a clean process Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) (16) 10:55 - 11:20 Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer Takuya Mino (Panasonic), Hideki Hirayama (RIKEN), Takayoshi Takano, Koji Goto, Mitsuhiko Ueda, Kenji Tsubaki (Panasonic) (17) 11:20 - 11:45 Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ---------------------------------------- Tue, Dec 13 PM (13:00 - 15:30) ---------------------------------------- (18) 13:00 - 13:25 Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.) (19) 13:25 - 13:50 Fabrication of TiO2 channel TFTs using room temperature atomic layer deposition and their application to light sensor Ko Kikuchi, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) (20) 13:50 - 14:15 Optical design of organic solar cells using nanotexture and high-refractive-index glass Shigeru Kubota, Yoshiki Harada (Yamagata Univ.), Takenori Sudo (Waseda Univ.), Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.) (21) 14:15 - 14:40 Fabrication of artificial zeolite using atomic layer deposition at room temperature and application to Dye-Sensitized Solar Cells Takahiro Imai, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) (22) 14:40 - 15:05 Characterization of electric properties for wide-gap semiconductors using terahertz time-domain elipsometry Takashi Fujii (RITS/PNP), Kohei Tachi, Tsutomu Araki, Yasushi Nanishi (RITS), Toshiyuki Iwamoto, Yukinori Sato (PNP), Takshi Nagashima (Setsunan Univ.) (23) 15:05 - 15:30 Growth and Conductivity Control of Corundum-Structured Gallium Oxides on Sapphire Substrates Kazuaki Akaiwa, Kunio Ichino (Tottori Univ), Kentaro Kaneko, Shizuo Fujita (Kyoto Univ) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Devices (ED) === # FUTURE SCHEDULE: Mon, Dec 19, 2016 - Tue, Dec 20, 2016: RIEC, Tohoku Univ [Fri, Oct 28], Topics: Millimeter-wave, terahertz-wave devices and systems Thu, Jan 26, 2017 - Fri, Jan 27, 2017: Kikai-Shinko-Kaikan Bldg. [Wed, Nov 16], Topics: Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies Mon, Jan 30, 2017 - Tue, Jan 31, 2017: Miyajima-Morino-Yado(Hiroshima) [Wed, Nov 16], Topics: Circuit, Device and Engineering Science Fri, Feb 24, 2017: Centennial Hall, Hokkaido Univ. [Fri, Dec 16], Topics: Functional nanodevices and related technologies # SECRETARY: Koji Matsunaga（NEC) TEL：+81-44-435-8348 FAX：+81-44-455-8253 E-mail： k-      fp   c Toshikazu Suzuki (JAIST) TEL : +81-761-51-1441 Fax : +81-761-51-1455 E-mail :  si  jaist === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Mon, Jan 30, 2017 - Tue, Jan 31, 2017: Miyajima-Morino-Yado(Hiroshima) [Wed, Nov 16], Topics: Circuit, Device and Engineering Science === Technical Committee on Lasers and Quantum Electronics (LQE) === # FUTURE SCHEDULE: Fri, Dec 16, 2016 (tentative): Kikai-Shinko-Kaikan Bldg. [Thu, Oct 13] Wed, Jan 18, 2017 - Thu, Jan 19, 2017<br> (changed): Iseshi Kanko Bunka Kaikan [Mon, Nov 14] # SECRETARY: Naoki Fujiwara (NTT) TEL +81-46-240-3266, FAX +81-46-240-4345 E-mail:     o    Takashi Katagiri（Tohoku Univ） TEL +81-22-795-7107, FAX +81-22-795-7106 E-mail:  gi ecei  # ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/ Last modified: 2016-11-24 11:41:06 |
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