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Technical Committee on Electron Device (ED)
Chair: Masaaki Kuzuhara Vice Chair: Tamotsu Hashidume
Secretary: Shin-ichiro Takatani, Manabu Arai
Assistant: Naoki Hara, Koichi Murata

DATE:
Fri, Jun 15, 2007 13:00 - 17:30
Sat, Jun 16, 2007 09:30 - 12:25

PLACE:
Gofuku Campus, Toyama University(Gofuku 3190, Toyama-shi, Toyama 930-8555, Japan. By Bus: About 20min. from Toyama Airport to JR Toyama Station,http://www.u-toyama.ac.jp/en/access/gofuku/index.html. Prof. Koichi Maezawa)

TOPICS:
Compound Semiconductor Process, Device, etc

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Fri, Jun 15 PM (13:00 - 17:30)
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(1) 13:00 - 13:25
0.10 um Ion-Implanted GaAs MESFETs with Low Cost Production Process
Masataka Watanabe, Daiji Fukushi, Hiroshi Yano, Shigeru Nakajima (Eudyna Devices)

(2) 13:25 - 13:50
A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance
Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric)

(3) 13:50 - 14:15
Study of localized spins in Be delta-doped GaAs structure
J.p. Noh, D.w. Jung, A. z. m. Touhidul Islam, Nobuo Otauka (JAIST)

----- Break ( 10 min. ) -----

(4) 14:25 - 14:50
Epitaxial lift-off of InAs thin films and their van der Waals bonding on SiO2/Si wafers
Hayato Takita, Yonkil Jeong, Jun-ya Arita, Toshi-kazu Suzuki (JAIST)

(5) 14:50 - 15:15
Growth of Insb films on Si(111) surface by 2-step growth
Kazunori Murata, Norsuryati Binti Ahmad, Yu Tamura, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ of Toyama)

(6) 15:15 - 15:40
Formation of high quality InSb film via InSb bi-layer on Si substrate
Mitsufumi Saito, Masayuki Mori, Yuji Yamasita, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama)

----- Break ( 10 min. ) -----

(7) 15:50 - 16:15
DC characteristics of HBT with buried SiO2 wires in collector
Shinnosuke Takahashi, Tsukasa Miura, Hiroaki Yamashita (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech/JST-CREST)

(8) 16:15 - 16:40
MOVPE growth of high-quality InP-based resonant tunneling diodes
Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT)

(9) 16:40 - 17:05
Study for implementation of integrated gyrators by using resonant tunneling diodes
Michihiko Suhara, Eri Ueki, Tsugunori Okumura (Tokyo Metro. Univ.)

(10) 17:05 - 17:30
Optical control of triple quantum disks on waveguide structure
Masahito Yamaguchi, Minori Yokoi (Nagoya Univ.), Hidetoshi Takagi (Ube N.C.T.), Nobuhiko Sawaki (Nagoya Univ.)

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Sat, Jun 16 AM (09:30 - 12:25)
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(11) 09:30 - 10:10
[Invited Talk]
Current transport mechanism of metal/p-GaN contacts
Kenji Shiojima (Fukui Univ.)

(12) 10:10 - 10:35
Anodic oxidation on n-GaN surface using photoelectrochemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.)

(13) 10:35 - 11:00
Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target
Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST)

(14) 11:00 - 11:25
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current
Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.)

----- Break ( 10 min. ) -----

(15) 11:35 - 12:00
Electrical and structural properties of Al implanted 4H-SiC
Masataka Satoh, Shingo Miyagawa, Takahiro Kudoh, Shohei Nagata, Taku Tajima, Tohru Nakamura (Hosei Univ.)

(16) 12:00 - 12:25
Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring
Shuichi Ono, Manabu Arai (NJRC)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 30 minutes for presentation and 10 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Mon, Jun 25, 2007 - Wed, Jun 27, 2007: Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Thu, Apr 12], Topics: 2007 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007)
Fri, Aug 3, 2007: [Tue, May 22]
Fri, Sep 21, 2007: Kyushu Institute of Technology [Wed, Jul 18]

# SECRETARY:
Tsuyoshi Tanaka（Matsushita）
TEL: 075-956-9083, FAX: 075-956-9110
E-mail: