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Technical Committee on Component Parts and Materials (CPM)
Chair: Kiyoshi Ishii Vice Chair: Kiichi Kamimura
Secretary: Yoshitaka Kitamoto, Toru Matsuura
Assistant: Hidehiko Shimizu, Seiji Toyoda

DATE:
Fri, Nov 11, 2005 13:30 - 17:30
Sat, Nov 12, 2005 09:00 - 13:25

PLACE:
Bunkyo Campus, University of Fukui(3-9-1, Bunkyo, Fukui-shi, 910-8507, Japan. http://www.fukui-u.ac.jp/NewHP1002/map/campus.htm. Prof. Akio Yamamoto. 0776-27-8566)

TOPICS:

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Fri, Nov 11 (13:30 - 17:30)
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(1) 13:30 - 13:55
Thermal Strain and Temperature Coefficient of Resistance (TCR) of NiCr Thin Films Deposited by Sputtering
Satoshi Iwatsubo, Takaaki Shimizu (Toyama Industrial Techonogy Center), Ken Tsubata, Daisuke Kuwahara (HDK), Katsumi Tanino (Toyama Industrial Techonogy Center)

(2) 13:55 - 14:20
CZTS thin film solar cells using co-sputtered precursors
Ryouichi Kimura, Kazuo Jimbo, Tsuyoshi Kamimura, Satoru Yamada, Win Shwe Maw, Hironori Katagiri (Nagaoka National College of Tech.)

(3) 14:20 - 14:45
Crystal growth of Cu2ZnSnS4 by melting method
Toshiro Shimada, Koichiro Oishi, Kazuo Jimbo, Hironori Katagiri, Hideaki Araki, Osamu Yoshida, Makoto Yamazaki (Nagaoka National College of Tech.), Satoshi Kobayashi, Nozomu Tsuboi (Niigata Univ.)

(4) 14:45 - 15:10
Changes of surface structures during reactions of monomethylgermane on Si(001)
-- Toward to fabrication of Ge embedded in SiC structure --
Masayuki Harashima, Tetsushi Kanemaru, Ariyuki Kato, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. of Technol.)

(5) 15:10 - 15:35
Characterization of insulating nitride films grown on 6H-SiC by plasma nitridation method
Tetsuo Yamaguchi, YingShen Liu, Yoshiki Ishida, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.)

----- Break ( 15 min. ) -----

(6) 15:50 - 16:15
Preparation and Magnetic Properties of Hexagonal Ferrite Dot Arry
Akimitsu Morisako, Xiaoxi Liu (Shinshu Univ.)

(7) 16:15 - 16:40
Fabrication of Bi-2212 stacks by self-planarizing process
Mitsuo Suzuki, Ruttanut Fachamroon, Naomi Yokawa, Kumi Okanoue, Katsuyoshi Hamasaki (Nagaoka Univ. of Tech.)

(8) 16:40 - 17:05
Characterization of the surface layer on high-Tc superconducting Bi2Sr2CaCu2Ox single crystal modified with dilute hydrohloric asid
Naomi Yokawa, Takashi Yoshida, Kumi Okanoue, Hisayuki Suematsu, Katsuyoshi Hamasaki (Nagaoka Univ. of Tech.), Takeshi Terajima, Hiroya Abe (JWRI, Osaka Univ.)

(9) 17:05 - 17:30
Temperature dependence of stacked Bi-2212 Josephson device
Ruttanut Fachamroon, Mitsuo Suzuki, Naomi Yokawa, Kumi Okanoue, Katsuyoshi Hamasaki (Nagaoka Univ. of Tech.)

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Sat, Nov 12 (09:00 - 13:25)
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(1) 09:00 - 09:25
KOH etching effects of GaN buffer in MOVPE growth of InN on sapphire substrate
Yasuhiko Nagai, Hiroshi Miwa, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)

(2) 09:25 - 09:50
Growth and Characterization of MOVPE InN Films on Bulk GaN Substrate
Wen-Jun Wang, Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)

(3) 09:50 - 10:15
Photocatalytic H2S decomposition by InN1-xOx films grown by ArF laser-assisted MOCVD
Masayoshi Miyanishi (Univ. of Fukui), Naoya Takahashi (Fukui NCT), Takahiro Kobayashi (Univ. of Fukui), Katsumi Takayama (Fukui NCT), Yukio Nambo (Nicca), Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)

(4) 10:15 - 10:40
MOVPE growth of high-quality InN on 3c-SiC/Si template
Myung Soo Cho, Takahiro Kobayashi, Naoki Sawazaki, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center)

(5) 10:40 - 11:05
MOVPE growth of GaN on 3c-SiC/Si template
-- Nitridation effects of template surface --
Naoki Sawazaki, Takahiro Kobayashi, Myung Soo Cho, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center)

----- Break ( 15 min. ) -----

(6) 11:20 - 11:45
Preparation of ZnS Thin Films by Chemical Bath Method
-- Effects of Adding Hydrazine Monohydrate --
Masakazu Hiruta, Satoshi Kobayashi, Nozomu Tsuboi, Futao Kaneko (Niigata Univ.)

(7) 11:45 - 12:10
Investigations of the structural deformations in Si/SiGe films by AFM and HRXRD
Shuqi Zheng, M. Kawashima, Masayuki Mori, Toyokazu Tambo, C. Tatsuyama (Toyama Univ.)

(8) 12:10 - 12:35
Investigation of sputter-deposition process in pulse sputtering
Yoichi Hoshi (Tokyo Polytchinic Univ.), Yuji Kuniyoshi (Tokyo Polytechinic Univ.), Osamu Kamiya (Canon Inc.), Hidehiko Shimizu (Niigata Univ.)

(9) 12:35 - 13:00
Examination And Preparation of YBCO Thin Film by Low Voltage Sputtering Method
Yoshimasa Okada, Hidehiko Shimizu, Takasi Mori, Haruo Iwano, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.), Takeo Maruyama (Niigata Univ.)

(10) 13:00 - 13:25
Preparation and examination of ITO thin film for organic electroluminescence device
Kouichi Tsukio, Masaki Takeuchi, Kazuya Morishita, Hidehiko Shimizu, Takeo Maruyama, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.)

=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:

Fri, Jan 20, 2006: [Thu, Nov 10]

# SECRETARY:
Hidehiko Shimizu（Niigata Univ.）
TEL 025-262-6811 FAX 025-262-6811
E-mail: