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Chair |
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Yasuo Nara (Fujitsu Semiconductor) |
Vice Chair |
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Yuzou Oono (Univ. of Tsukuba) |
Secretary |
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Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi) |
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Conference Date |
Thu, Oct 25, 2012 15:20 - 17:00
Fri, Oct 26, 2012 09:30 - 14:15 |
Topics |
Process science and new process technologies |
Conference Place |
FFF, Niche, Tohoku University |
Address |
FFF Neiche, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, 980-8579 |
Transportation Guide |
http://www.fff.niche.tohoku.ac.jp/index.html |
Contact Person |
Tetsuya Goto, Tohoku University |
Thu, Oct 25 PM 15:20 - 17:00 |
(1) |
15:20-15:45 |
Chemical structures of compositional transition layer at SiO2/Si(100) interface |
Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) |
(2) |
15:45-16:10 |
AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces |
Hazuki Okada, Arata Komatsu, Masato Watanabe (Tokyo City Univ.), Yudai Izumi, Takayuki Muro (JASRI), Kentaro Sawano, Hiroshi Nohira (Tokyo City Univ.) |
(3) |
16:10-16:35 |
Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction |
Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe) |
(4) |
16:35-17:00 |
Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching |
Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) |
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17:00-17:30 |
Break ( 30 min. ) |
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17:30-19:30 |
Banquet ( 120 min. ) |
Fri, Oct 26 AM 09:30 - 14:15 |
(5) |
09:30-09:55 |
Noise Performance of Accumulation MOSFETs |
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
(6) |
09:55-10:20 |
Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer |
Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
(7) |
10:20-11:50 |
[Special Talk]
Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization |
Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.) |
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11:50-13:00 |
Lunch Break ( 70 min. ) |
(8) |
13:00-13:25 |
Fabrication process for pentacene-based vertical OFETs with HfO2 gate insulator |
Min Liao (Tokyo Inst. of Tech.), Hiroshi Ishiwara (Konkuk Univ.), Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
(9) |
13:25-13:50 |
Effect of silicon surface roughness on MOSFET performance with ultra-thin HfON gate insulator formed by ECR sputtering |
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
(10) |
13:50-14:15 |
Ultra high speed wet etching technology for a silicon wafer process |
Takeshi Sakai, Tatsuro Yoshida, Kazuhiro Yoshikawa, Tadahiro Ohmi (Tohoku Univ.) |
Announcement for Speakers |
General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
Special Talk | Each speech will have 80 minutes for presentation and 10 minutes for discussion. |
Contact Address and Latest Schedule Information |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
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Contact Address |
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-: o |
Last modified: 2012-08-17 13:51:30
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