Thu, Nov 15 AM
10:00 - 11:45 |
| |
10:00-10:05 |
Opening Talk ( 5 min. ) |
| (1) |
10:05-10:55 |
[Invited Talk]
2012 SISPAD Review
-- quantum transport, new materials, atomistic molecular modeling, and other topics -- |
Yoshinari Kamakura (Osaka Univ.) |
| (2) |
10:55-11:45 |
[Invited Talk]
2012 SISPAD Paper Review
-- Compact Model, Device Variability, Device Reliability -- |
Takahiro Iizuka (Hiroshima Univ.) |
| |
11:45-13:00 |
Lunch Break ( 75 min. ) |
Thu, Nov 15 PM
13:00 - 14:15 |
| (3) |
13:00-13:50 |
[Invited Talk]
High Performance SiC Power Devices and Modules
-- Miniaturization of System by Low-Ron and High Temperature Operation -- |
Takashi Nakamura, Masatoshi Aketa, Yuki Nakano, Takukazu Otsuka, Toshio Hanada (ROHM) |
| (4) |
13:50-14:15 |
New design method for power devices using topology optimization based on the adjoint variable method |
Katsuya Nomura, Tsuguo Kondoh, Tsuyoshi Ishikawa, Atsushi Kawamoto, Tadayoshi Matsumori, Takahide Sugiyama (TCRDL) |
| |
14:15-14:30 |
Break ( 15 min. ) |
Thu, Nov 15 PM
14:30 - 15:45 |
| (5) |
14:30-15:20 |
[Invited Talk]
Fluctuation of MOSFETs from Low-Frequency Noise to Thermal Noise Using a Novel Measurement System beyond 100 MHz |
Kenji Ohmori (Uni. of Tsukuba) |
| (6) |
15:20-15:45 |
Neutral and Attractive Traps in Random Telegraph Signal Noise Phenomena using (100)- and (110)-Oriented CMOSFETs |
Jiezhi Chen, Izumi Hirano, Kosuke Tatsumura, Yuichiro Mitani (Toshiba Corp) |
Fri, Nov 16 AM
10:00 - 11:40 |
| (7) |
10:00-10:25 |
An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs |
Masahiro Yamamoto, Akira Hiroki, Jong Chul Yoon (KIT) |
| (8) |
10:25-10:50 |
Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT) SOI CMOS |
Daiki Sato, Yasuhisa Omura (Kansai Univ.) |
| (9) |
10:50-11:15 |
Empirical Pseudopotential Calculations of Two-Dimensional Electronic States in 4H-SiC Inversion layers |
Ryuta Watanabe, Yoshinari Kamakura (Osaka Univ.) |
| (10) |
11:15-11:40 |
Impact of Discrete Dopant in Characteristics of Nanowire Transistors
-- KMC and NEGF Study -- |
Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.) |
| |
11:40-13:00 |
Lunch ( 80 min. ) |
Fri, Nov 16 PM
13:00 - 14:40 |
| (11) |
13:00-13:25 |
Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures |
Tomofumi Zushi (Waseda Univ./JST), Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba/JST), Takanobu Watanabe (Waseda Univ./JST) |
| (12) |
13:25-13:50 |
Monte Carlo Simulation of Phonon Transport in Silicon Thin Films Including Realistic Dispersion Relation |
Kentaro Kukita (Osaka University), Yoshinari Kamakura (Osaka University/JST CREST) |
| (13) |
13:50-14:15 |
Effect of a three-dimensional strain field on the electronic band structures of carbon nanotubes and graphene sheets |
Ken Suzuki, Masato Ohnishi, Hideo Miura (Tohoku Univ.) |
| (14) |
14:15-14:40 |
Nonlocal band to band tunneling model for tunnel-FETs
-- Device and circuit models -- |
Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST) |
| |
14:40-14:55 |
Break ( 15 min. ) |
Fri, Nov 16 PM
14:55 - 16:10 |
| (15) |
14:55-15:20 |
ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS for CIRCUIT SIMULATION |
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Tatsuhiro Numata, Kazuo Nakazato (Nagoya Univ.) |
| (16) |
15:20-15:45 |
Design method of system LSI and SEA cell type DRAM with tunneling type transistor. |
Ryosuke Suzuki, Shigeyoshi Watanabe (Shonan Inst. of Tech) |
| (17) |
15:45-16:10 |
Design Technology of stacked Type Chain PRAM Readout |
Sho Kato, Shigeyoshi Watanabe (Shonan Inst, of Tech,) |