Mon, Jun 9 PM 13:30 - 15:40 |
(1) |
13:30-14:30 |
[Tutorial Lecture]
Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS |
Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST) |
|
14:30-14:40 |
Break ( 10 min. ) |
(2) |
14:40-15:40 |
[Tutorial Lecture]
Development History of Compound Semiconductor Electron Devices |
Yasuo Ohno (Tokushima Univ.) |
|
15:40-15:50 |
Break ( 10 min. ) |
Mon, Jun 9 PM 15:50 - 17:40 |
(3) |
15:50-16:15 |
HoleSubband Dispersion in Si inversion Layers |
Sakura N. Takeda, Makoto Morita, Takuya Ohsugi, Yohei Tanigawa, Hiroshi Daimon (NAIST) |
(4) |
16:15-16:40 |
Accurate Evaluation of MOS Inversion Layer Mobility |
Akira Toriumi, Koji Kita (Univ. Tokyo) |
|
16:40-16:50 |
Break ( 10 min. ) |
(5) |
16:50-17:15 |
Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs |
Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) |
(6) |
17:15-17:40 |
Mobility Enhancement in Ultra Thin Body SOI MOSFETs by Quantum Confinement Effects |
Toshiro Hiramoto, Ken Shimizu, Gen Tsutsui (Univ. of Tokyo) |
|
18:00-19:30 |
Banquet ( 90 min. ) |
Tue, Jun 10 AM 09:30 - 10:20 |
(7) |
09:30-09:55 |
Transconductance enhancement of strained-Si nanowire FETs |
Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.) |
(8) |
09:55-10:20 |
Gate Dielectrics Interface Control for III-V MISFET |
Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) |
|
10:20-10:30 |
Break ( 10 min. ) |
Tue, Jun 10 AM 10:30 - 11:45 |
(9) |
10:30-10:55 |
Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- |
Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) |
(10) |
10:55-11:20 |
The role of the high-k/SiO2 interface in the control of the threshold voltage for high-k MOS devices |
Kunihiko Iwamoto, Yuuichi Kamimuta (MIRAI-ASET), Yu Nunoshige (Shibaura Institute of Technology), Akito Hirano, Arito Ogawa, Yukimune Watanabe (MIRAI-ASET), Shinji Migita, Wataru Mizubayashi, Yukinori Morita (MIRAI-ASRC, AIST), Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (The University of Tokyo) |
(11) |
11:20-11:45 |
XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- |
Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) |
|
11:45-12:45 |
Lunch Break ( 60 min. ) |
Tue, Jun 10 PM 12:45 - 15:00 |
(12) |
12:45-13:10 |
XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface |
Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) |
(13) |
13:10-13:35 |
Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties |
Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) |
|
13:35-13:45 |
Break ( 10 min. ) |
(14) |
13:45-14:10 |
Theoretical Studies on the Charge Trap Mechanisms of MONOS Memories |
Kenji Shiraishi, Kenji Kobayashi (Univ of Tsukuba), Takeshi Ishida, Yutaka Okuyama, Renichi Yamada (Central Research Labs., Hitachi) |
(15) |
14:10-14:35 |
Characterization of Metal Nanodots Nonvolatile Memory |
Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.) |
(16) |
14:35-15:00 |
Bio-nano dot floating gate memory with High-k films |
Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) |