|
|
| Chair |
|
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu Microelectronics) |
| Secretary |
|
Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
|
Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
|
|
| Chair |
|
Masaaki Kuzuhara (Univ. of Fukui) |
| Vice Chair |
|
Tamotsu Hashidume (Hokkaido Univ.) |
| Secretary |
|
Koichi Murata (NTT) |
| Assistant |
|
Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba) |
|
| Conference Date |
Thu, Feb 26, 2009 13:30 - 17:20
Fri, Feb 27, 2009 09:00 - 12:10 |
| Topics |
Functional nanodevices and related technologies |
| Conference Place |
Hyakunen-Kinenkaikan, Hokkaido University |
| Address |
Nishi 6, Kita 9, Kita-ku, Sapporo, 060-0809 Japan. |
| Transportation Guide |
10 minutes walk from JR Sapporo Station
http://www.hokudai.ac.jp/en/pickup/accesstocampus.html |
Contact
Person |
Prof. Seiya Kasai
+81-11-706-6509 or -7171 |
Thu, Feb 26 PM
13:30 - 17:20 |
| (1) |
13:30-14:10 |
[Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices |
Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) |
| (2) |
14:10-14:35 |
Magnetic properties of Mn-implanyed SOI layers |
Ｙａｓｕａｋｉ Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.) |
| (3) |
14:35-15:00 |
Fabrication and application for Spin injection with Magnetite/InAs heterostructure |
Takeshi Ejiri, J. Bubesh Babu, Kanji Yoh (Hokkaido Univ.) |
| (4) |
15:00-15:25 |
Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy |
Yusuke Kitauchi, Junichi Motohisa, Yasunori Kobayashi, Takashi Fukui (Hokkaido Univ.) |
| |
15:25-15:40 |
Break ( 15 min. ) |
| (5) |
15:40-16:05 |
Feild Emitter Arrays with focusing function and it's applications |
Yoichiro Neo, Masafumi Takeda, Tomoya Tagami, Syun Horie, Toru Aoki, Hidenori Mimura (Shizuoka Univ.), Tomoya Yoshida, Masayoshi Nagao, Seigo Kanemaru (National Inst.of Adv Ind Scie and Tech.) |
| (6) |
16:05-16:30 |
Characteristics of Single Electron Transistor and Turnstile with Input Discretizer |
Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication) |
| (7) |
16:30-16:55 |
Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes |
Tomohiko Ebata, Uichiro Ohmae, Kazuya Machida, Takao Waho (Sophia Univ.) |
| (8) |
16:55-17:20 |
RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate |
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,) |
Fri, Feb 27 AM
09:00 - 12:10 |
| (9) |
09:00-09:25 |
Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration |
Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) |
| (10) |
09:25-09:50 |
Dual-dot single-electron transistor fabricated in silicon nanowire |
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) |
| (11) |
09:50-10:15 |
Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain |
YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) |
| (12) |
10:15-10:40 |
Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Devices |
Daisuke Nakata, Shaharin Fadzli Abd Rahman, Yuta Shiratori (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ/PRESTO,JST) |
| |
10:40-10:55 |
Break ( 15 min. ) |
| (13) |
10:55-11:20 |
The fourth passive circuit element relating magnetic flux to charge |
Yoshihito Amemiya, Yasuo Takahashi (Hokkaido Univ.) |
| (14) |
11:20-11:45 |
Observation of Stochastic Resonance in Nanodevice-integrated Systems Utilizing GaAs-based Nanowire Network and Its Analysis |
Seiya Kasai (Hokkaido Univ/JST), Tetsuya Asai, Yuta Shiratori, Hong-Quan Zhao (Hokkaido Univ.) |
| (15) |
11:45-12:10 |
Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device |
Hiroya Ikeda, Faiz Salleh, Kiyosumi Asai, Akihiro Ishida (Shizuoka Univ.) |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-  ge       ba |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-：    aecl
Hara Naoki （Fujitsu Lab.）
TEL : 046-250-8242、FAX : 046-250-8168
E- :  o     
Kunio Tsuda（Toshiba）
TEL : 044-549-2142、FAX : 044-520-1501
E- :   o ba |
Last modified: 2008-12-16 16:16:50
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