Mon, Jul 4
09:00 - 17:40 |
| (1) |
09:00-09:20 |
High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT |
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) |
| (2) |
09:20-09:40 |
Structure and formation of epitaxial graphene on SiC(0001) |
Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Basic Research Labs.), Masao Nagase (Univ. Tokushima) |
| (3) |
09:40-10:00 |
Fabrication of SiC-MOSFET with Al2O3 gate insulator |
Hiroyuki Yamada, Akio Ishiguro (Tokyo Tech), Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani (Mitsubishi), Eisuke Tokumitsu (Tokyo Tech) |
| (4) |
10:00-10:20 |
Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods |
Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) |
| |
10:20-10:40 |
Break ( 20 min. ) |
| (5) |
10:40-11:00 |
Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy |
Shinya Ohno, Kei Inoue, Masahiro Morimoto, Sadanori Arae, Hiroaki Toyoshima (Yokohama Nat'l Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shoichi Ogata (Yokohama Nat'l Univ.), Tetsuji Yasuda (AIST), Masatoshi Tanaka (Yokohama Nat'l Univ.) |
| (6) |
11:00-11:20 |
Dependence of carrier traps at SiO2/Si interfaces on Si surface orientation studied by XPS time-dependent measurement |
Yuri Ishihara (Shibaura Inst.Tech), Yasuhiro Shibuya, Satoshi Igarashi (Tokyo City Univ.), Daisuke Kobayashi (ISAS/JAXA), Hiroshi Nohira (Tokyo City Univ.), Kazuyoshi Ueno (Shibaura Inst.Tech), Kazuyuki Hirose (ISAS/JAXA) |
| (7) |
11:20-11:40 |
Photoluminescence and interface properties of Si nanolayers and nanowires |
Yoko Sakurai, Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba), Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Insti. Tech.), Kenji Shiraishi, Shintaro Nomura (Univ. of Tsukuba) |
| (8) |
11:40-12:00 |
Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure |
Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| (9) |
12:00-12:20 |
Control of Interfacial Ractions in HfO2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiOx Capping on Ge(100) |
Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Kento Mishima, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
| |
12:20-13:20 |
Lunch Break ( 60 min. ) |
| (10) |
13:20-13:40 |
Effect of O2 Annealing for Al2O3/Ge Structure on Interfacial Properties |
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| (11) |
13:40-14:00 |
Control of Interfacial Reactions in Pr Oxide/Ge Structures Based on Valence State of Pr |
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| (12) |
14:00-14:20 |
Photoemission Study of Chemical Bonding Features at Metal/GeO2 Interfaces |
Masafumi Matsui, Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
| (13) |
14:20-14:40 |
Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study |
Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) |
| (14) |
14:40-15:00 |
Effects of foreign atom incorporation into HfO2 dielectrics
-- Examination using a first-principles method -- |
Toshinori Nakayama, Hiroshi Kawasaki, Takuya Maruizumi (TCU) |
| (15) |
15:00-15:20 |
The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO2 MOS capacitors |
Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.), Toyohiro Chikyow (NIMS) |
| |
15:20-15:40 |
Break ( 20 min. ) |
| (16) |
15:40-16:00 |
Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure |
Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
| (17) |
16:00-16:20 |
Evaluation of Electrical Property at SrTiO3 Bicrystal Interface by EBIC |
Tetsuji Kato, Son Phu Thanh Pham, Yoshiaki Nakamura, Jun Kikkawa, Akira Sakai (Osaka Univ.) |
| (18) |
16:20-16:40 |
Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering |
Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
| (19) |
16:40-17:00 |
Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices |
Masahiro Horita, Koji Yamasaki, Emi Machida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
| (20) |
17:00-17:20 |
Design of stacked NOR type PRAM with phase change channel transistor |
Sho Kato, Shigeyoshi Watanabe (Shonan Institute of Technology) |
| (21) |
17:20-17:40 |
Design method of system LSI with low power device |
Ryosuke Suzuki, Shigeyoshi Watanabe (Shonan Inst. Tech.) |
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