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Chair |
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Yuko Kominami (Shizuoka Univ.) |
Vice Chair |
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Mutsumi Kimura (Ryukoku Univ.) |
Secretary |
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Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.) |
Assistant |
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Rumiko Yamaguchi (Akita Univ.), Hiroyuki Nitta (Japan Display), Mitsuru Nakata (NHK), Ryosuke Nonaka (Toshiba), Takeshi Okuno (Huawei), Tomokazu Shiga (Univ. of Electro-Comm.) |
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Chair |
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Tatsuya Kunikiyo (Renesas) |
Vice Chair |
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Takahiro Shinada (Tohoku Univ.) |
Secretary |
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Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) |
Assistant |
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Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) |
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Conference Date |
Fri, Dec 22, 2017 10:30 - 17:00 |
Topics |
Si, Si-related materials, device process, electron devices, and display technology |
Conference Place |
Katsura Campus, Kyoto University |
Contact Person |
Prof. Tsunenobu Kimoto
+81-75-383-2300 |
Fri, Dec 22 AM 10:30 - 12:00 |
(1) |
10:30-10:45 |
Light trapping effect of nanoimprinted texture for thin crystalline silicon solar cell |
Nakai Yuya, Ishikawa Yasuaki, Uraoka Yukiharu (NAIST) |
(2) |
10:45-11:00 |
Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
-- Dependencies of resistivity on Al concentration and temperature -- |
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) |
(3) |
11:00-11:15 |
Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC
-- Relationship between Inversion of Hall Coefficient and Conduction Mechanism -- |
Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) |
(4) |
11:15-11:30 |
Electric properties in Al-N codoped p-type 4H-SiC epilayers
-- Comparison between temperature dependent resistivity in Al-doped and codoped samples -- |
Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) |
(5) |
11:30-11:45 |
Ultra-high power transistor and thyristor consisting of Si solar cell and LED matrix |
Kensho Okamoto (Opto Device Lab.) |
(6) |
11:45-12:00 |
Wireless power transmission to biological stimulation devices with a thin film coil |
Keigo Misawa, Keisuke Tomioka, Kouhei Miyake, Mutsumi Kimura (Ryukoku Univ.) |
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12:00-13:15 |
Lunch Break ( 75 min. ) |
Fri, Dec 22 PM 13:15 - 15:15 |
(7) |
13:15-13:30 |
Flexible Device Applications Using GaSnO Thin Films |
Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) |
(8) |
13:30-13:45 |
Seebeck effect measurement of rare metal free oxide semiconductor |
Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) |
(9) |
13:45-14:00 |
Three-dimension periodic nano-structure fabricated by proximity nano-patterning process (PnP) |
Xudongfang Wang, Yasuaki Ishikawa, Shinji Araki, Yukiharu Uraoka (NAIST), Seokwoo Jeon (KAIST) |
(10) |
14:00-14:15 |
Brain type integrated system using IGZO thin film as variable resistance element |
Daiki Yamakawa, Yuki Shibayama, Keisuke Ikushima, Sumio Sugisaki (Ryukoku Univ.), Yoshinori Miyamae (ROHM), Mutsumi Kimura (Ryukoku Univ.) |
(11) |
14:15-14:30 |
Cross point synapse using amorphous oxide semiconductor for neurocomputing devices |
Ryo Tanaka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) |
(12) |
14:30-14:45 |
Simulation of neural network using ferroelectric capacitor |
Isato Ogawa, Tomoharu Yokoyama, Mutsumi Kimura (Ryukoku Univ.) |
(13) |
14:45-15:00 |
Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation |
Jun Hirade, Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) |
(14) |
15:00-15:15 |
Characteristic Evaluation of GaSnO Thin Films deposited using Mist Chemical Vapor Deposition |
Ryugo Okamoto, Hiroki Fukushima (Ryukoku Univ), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsumi Kimura (Ryukoku Univ) |
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15:15-15:30 |
Break ( 15 min. ) |
Fri, Dec 22 PM 15:30 - 17:00 |
(15) |
15:30-15:45 |
Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate |
Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) |
(16) |
15:45-16:00 |
Operation verification of Thin-Film Biostimulating Device using Thin-Film Transistors |
Kohei Miyake, Keisuke Tomioka, Keigo Misawa, Mutsumi kimura (Ryukoku Univ.) |
(17) |
16:00-16:15 |
Effect of SiOx capping film on crystallization of Ge film by flash lamp annealing |
Naoki Yoshioka, Yoshiki Akita, Akira Heya, Naoto Matsuo (Univ of Hyogo), Kazuyuki Kohama, Kazuhiro Itou (Osaka Univ) |
(18) |
16:15-16:30 |
Effect of photonic band gap on flash-lamp-annealing crystallization for Islands-shape a-Ge film |
Naoki Yoshioka, Akira Heya, Naoto Matsuo, Yoshiki Akita (Univ og Hyogo) |
(19) |
16:30-16:45 |
Study for hole- or electron- conduction of DNA/Si-MOSFET |
Hibiki Nakano, Matsuo Naoto, Akira Heya, Tadao Takada, Kazusige Yamana (Univ. of Hyogo), Tadashi Sato, Shin Yokoyama (Univ. Hiroshima), Omura Yasuhisa (Univ.Kansai) |
(20) |
16:45-17:00 |
Analytical study for electric resistance of grafene |
Naoto Matsuo, Akira Heya (Univ Hyogo) |
Announcement for Speakers |
General Talk | Each speech will have 10 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
EID |
Technical Committee on Electronic Information Displays (EID) [Latest Schedule]
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Contact Address |
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SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
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Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 |
Last modified: 2017-10-18 12:59:09
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