|
|
| Chair |
|
Naoki Hara (Fujitsu Labs.) |
| Vice Chair |
|
Koichi Maezawa (Univ. of Toyama) |
| Secretary |
|
Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC) |
| Assistant |
|
Toshikazu Suzuki (JAIST), Manabu Arai (New JRC) |
|
| Conference Date |
Fri, Aug 1, 2014 10:30 - 16:40 |
| Topics |
Semiconductor Process and Devices (surface, interface, reliability), others |
| Conference Place |
|
Fri, Aug 1 AM
10:30 - 12:10 |
| (1) |
10:30-11:20 |
[Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection |
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) |
| (2) |
11:20-11:45 |
The Theoretical Characteristic and its Experimental Verification of GaAsSb/InGaAs Double-Gate Tunnel FET |
Kazumi Ohashi, Motohiko Fujimatsu, Yasuyuki Miyamoto (Tokyo Inst. of Tech.) |
| (3) |
11:45-12:10 |
Analysis of effects of dislocation scattering on device characteristics of InSb HEMT |
Shota Hatsushiba, Shohei Nagai, Sachie Fujikawa (TUS), Shinsuke Hara, Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Hiroki I. Fujishiro (TUS) |
| |
12:10-13:30 |
Break ( 80 min. ) |
Fri, Aug 1 PM
13:30 - 16:40 |
| (4) |
13:30-14:20 |
[Invited Talk]
InGaAs MOSFET Source Structures Toward High Speed/low Power Applications |
Yasuyuki Miyamoto, Toru Kanazawa, Yoshiharu Yonai, Atsushi Kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi (Tokyo Inst. of Tech.) |
| (5) |
14:20-14:45 |
Analysis of Mechanisms of Delay Time Generation in III-V DG MOSFETs |
Yuki Yajima, Ryoko Ohama, Sachie Fujikawa, Hiroki I. Fujishiro (TUS) |
| (6) |
14:45-15:10 |
Improvement of Off-State Characteristics with a P-Type Capping Layer in GaAs JPHEMT |
Katsuhiko Takeuchi, Satoshi Taniguchi, Masashi Yanagita (Sony), Yuji Sasaki, Mitsuhiro Nakamura (Sony Semiconductor), Shinichi Wada (Sony) |
| |
15:10-15:25 |
Break ( 15 min. ) |
| (7) |
15:25-15:50 |
Fabrication of Carbon nanotube TFT for sheet electronic device by printing method. |
Hiroyuki Endoh, Noriyuki Tonouchi, Fumiyuki Nihey (NEC Corp.), Tsuyoshi Sekitani, Takao Someya (Univ.of Tokyo) |
| (8) |
15:50-16:15 |
Band offset at Al2O3/β-Ga2O3 Heterojunctions |
Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) |
| (9) |
16:15-16:40 |
HAXPES Analysis for GaAs Surface State for Electronics Devices |
Yoshihiro Saito, Daisuke Tsurumi, Junji Iihara, Aiko Tominaga, Takumi Yonemura, Koji Yamaguchi (SEI) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Tetsuzo Ueda（Panasonic)
TEL：+81-6-6906-4940、FAX：+81-6-6906-2426
E- ：      zo  pa   c
Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E- :   irciqe  i |
Last modified: 2014-06-17 15:28:17
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