Tue, Feb 7 PM
13:30 - 17:20 |
| (1) |
13:30-14:10 |
[Invited Talk]
Deterministic-doped Silicon Devices and Their Quantum Transport |
Takahiro Shinada, Masahiro Hori (Waseda Univ.), Filipo Guagliardo (Politecnico di Milano), Yukinori Ono (NTT), Kuninori Kumagai, Takashi Tanii (Waseda Univ.), Enrico Prati (CNR) |
| (2) |
14:10-14:35 |
Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors |
Youhei Kuzuya, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Univ. of Southampton) |
| (3) |
14:35-15:00 |
KFM observation of individual dopant potentials and electron charging |
Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) |
| |
15:00-15:15 |
Break ( 15 min. ) |
| (4) |
15:15-15:40 |
High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation |
Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) |
| (5) |
15:40-16:05 |
High-frequency characterization of InAs nanowire MISFETs |
Tatsuro Watanabe, Yutaka Otsuhata, Takao Waho (Sophia Univ.), Kai Blekker, Werner Prost, Franz-Josef Tegude (Univ. of Duisburg-Essen) |
| (6) |
16:05-16:30 |
Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs |
Jie Pan, Kazuki Hayano, Masayuki Mori, Koichi Maezawa (Univ. Toyama) |
| (7) |
16:30-16:55 |
Gain enhancement in graphene terahertz amplifier with resonant structure |
Yuya Takatsuka, Kazuhiro Takahagi, Eiichi Sano (Hokkaido Univ.), Victor Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) |
| (8) |
16:55-17:20 |
Light emission from Silicon quantum-well by tunneling current injection |
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) |
Wed, Feb 8 AM
09:30 - 14:40 |
| (9) |
09:30-09:55 |
Observation of Conductance Quantization during SPM Scratching |
Ryutaro Suda, Takahiro Ohyama, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) |
| (10) |
09:55-10:20 |
Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration |
Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) |
| (11) |
10:20-10:45 |
Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films |
Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) |
| |
10:45-11:00 |
Break ( 15 min. ) |
| (12) |
11:00-11:25 |
Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias |
Faiz Salleh, Kazutoshi Miwa, Hiroya Ikeda (Shizuoka Univ.) |
| (13) |
11:25-11:50 |
Stochastic resonance using a steep-subthreshold-swing transistor |
Katsuhiko Nishiguchi, Akira Fujiwara (NTT) |
| |
11:50-13:00 |
Lunch Break ( 70 min. ) |
| (14) |
13:00-13:25 |
The Luttinger-liquid behavior in single-walled carbon nanotube networks |
Tomo Tanaka, Ken-ichiro Mori, Eiichi Sano, Bunshi Fugetsu, Hongwen Yu (Hokkaido Univ.) |
| (15) |
13:25-13:50 |
Charge distribution near interface of high-k gate insulator in CNFETs |
Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
| (16) |
13:50-14:15 |
Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs |
Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) |
| (17) |
14:15-14:40 |
Study on nonlinear transfer characteristics in a GaAs three-branch nanowire junction device using a light-induced local conductance modulation method |
Masaki Sato, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.) |
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