IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2023-05-19 / Issue Date : 2023-05-12

SDM2023-18
[Invited Talk] Repeated bending endurance test of zinc oxide thin films deposited at room temperature on flexible substrates
Toshihiko Maemoto, Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Shigehiko Sasa, Ahikiko Fujii (Osaka Inst. of Tech.)
pp. 1 - 6

SDM2023-19
Flexible Thermoelectric Materials with ZnO Nanorods for Self-powered Physiological Sensors
Hiroya Ikeda, Naoki Fujiwara, Koki Kato, Masaru Shimomura, Yasuhiro Hayakawa (Shizuoka Univ.), Toshitaka Yamakawa, Kazushi Ikeda (NAIST)
pp. 7 - 10

SDM2023-20
Micro Periodic Structures (LIPSS) Formed on Si Substrates Using Near-Infrared Free Electron Laser Irradiation
Youta Hoshino, Nohira Masayoshi, Nobuyuki Iwata (Nihon Univ.)
pp. 11 - 15

SDM2023-21
Relationship between motion constraints and walking behavior in a four-legged autonomous robot with an amoeba-inspired optimization mechanism
Kazuki Matsuda, Seiya Kasai (Hokkaido Univ.)
pp. 16 - 19

SDM2023-22
Fabrication and evaluation of transfer-free graphene FETs on sapphire substrates using agglomeration phenomenon of Ni patterns with ultra-fine structure
Ichiro Kato, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 20 - 23

SDM2023-23
Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si
Satoki Furuya, Mikiya Kuzutani, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Yasuhiko Ishikawa (Toyohashi Univ. Tech.)
pp. 24 - 27

SDM2023-24
Low-damage photo-electrochemical etching and electrochemical characterization of p-GaN layers grown on n-GaN substrates
Umi Takatsu, Kouta Kubo, Taketomo Sato (Hokkaido Univ.)
pp. 28 - 31

SDM2023-25
Study of device isolation technology of AlGaN/GaN high-electron-mobility transistors for their integration
Tatsuya Akamatsu, Yoshiki Akira, Hiroshi Okada (TUT)
pp. 32 - 35

SDM2023-26
AlN film by reactive sputtering as a stressor for Ge photonic devices on Si
Jose A. Piedra-Lorenzana, Shohei Kaneko, Takaaki Fukushima, Keisuke Yamane (Toyohashi Univ. Tec.), Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohashi Univ. Tec.)
pp. 36 - 39

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan