IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 122, Number 371

Microwaves

Workshop Date : 2023-01-27 / Issue Date : 2023-01-20

[PREV] [NEXT]

[TOP] | [2018] | [2019] | [2020] | [2021] | [2022] | [2023] | [2024] | [Japanese] / [English]

[PROGRAM] [BULK PDF DOWNLOAD]


Table of contents

MW2022-145
A Calibration method for RF Spectrum Regeneration Using Direct RF Undersampling at Different Sampling Frequency Multi-path
Takashi Shiba, Tomoyuki Furuichi, Noriharu Suematsu (Tohoku Univ.)
pp. 1 - 6

MW2022-146
Design of Parasitic-Element Loaded Wideband Filtering Antenna with Unidirectional Radiation Pattern over 30% Frequency Bandwidth
Ken Sakiyama, Masataka Ohira, Zhewang Ma (Saitama Univ.)
pp. 7 - 12

MW2022-147
A Reinforcement Learning Approach Enabling Automatic Microstrip BPF Design for Multiple Specifications
Yuto Asai, Masataka Ohira, Zhewang Ma (Saitama Univ.)
pp. 13 - 18

MW2022-148
Measurement Evaluation of Bias Dependence of Single-Input Broadband GaN Amplifier
Yuki Nakagawa, Takana Kaho (Shonan Inst. Tech.), Shuichi Sakata, Yuji Komatsuzaki, Koji Yamanaka (MELCO)
pp. 19 - 24

MW2022-149
Over 670 W output X-band IMFET Using non-Uniform Comb Lines for Stabilization
Eigo Kuwata, Takumi Sugitani, Takashi Yamasaki, Yoshitaka Kamo, Shintaro Shinjo (MELCO)
pp. 25 - 28

MW2022-150
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters -- Device Simulation Study --
Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric)
pp. 29 - 32

MW2022-151
(See Japanese page.)
pp. 33 - 35

MW2022-152
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT
Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech)
pp. 36 - 39

MW2022-153
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network
Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata (SEI)
pp. 40 - 43

MW2022-154
[Invited Talk] Circuits and devices technology of GaN power amplifiers for microwave and millimeter-wave application
Koji Matsunaga (SIT)
pp. 44 - 49

MW2022-155
[Invited Talk] Requierements for sharing type 4G/5G base station transciever amplifiers
Koji Yamanaka, Yuji Komatsuzaki, Shuichi Sakata, Kento Saiki (Mitsubishi Electric), Takana Kaho (SIT)
p. 50

MW2022-156
[Invited Talk] Microwave Semiconductor Devices and Circuits for Industrial Innovation
Kazuhiko Honjo (UEC)
pp. 51 - 54

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan