IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2021-01-28 / Issue Date : 2021-01-21

SDM2020-49
[Invited Talk] ****
Reika Ichihara (Kioxia)
pp. 1 - 2

SDM2020-50
[Invited Talk] Diamond Semiconductor Devices, state-of-the-art of material growth and device processing
Hitoshi Umezawa (AIST)
pp. 3 - 7

SDM2020-51
[Invited Talk] Secure 3D CMOS Chip Stacks with Backside Buried Metal Power Delivery Networks for Distributed Decoupling Capacitance
Kazuki Monta (Kobe Univ.)
pp. 8 - 12

SDM2020-52
[Invited Talk] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure
Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui (Hokkaido Univ.)
pp. 13 - 16

SDM2020-53
[Invited Talk] Evaluation of Defects in Si Substrates Introduced by Stochastic Lateral Straggling during Plasma Exposure and Its Impact on Ultra-low Leakage Devices
Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.)
pp. 17 - 20

SDM2020-54
[Invited Talk] Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs
Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo)
pp. 21 - 24

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan