IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 119, Number 161

Silicon Device and Materials

Workshop Date : 2019-08-07 - 2019-08-09 / Issue Date : 2019-07-31

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Table of contents

SDM2019-36
[Invited Talk] A Scalable CMOS Annealing Processor for Solving Large-scale Combinatorial Optimization Problems
Masato Hayashi, Takashi Takemoto, Chihiro Yoshimura, Masanao Yamaoka (Hitachi)
pp. 1 - 5

SDM2019-37
TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET
Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST)
pp. 7 - 10

SDM2019-38
[Invited Talk] "STEAM" for Next IoT/AI
Takahiro Kitayama (KAMAKE no SUSUME)
pp. 11 - 14

SDM2019-39
[Invited Talk] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SGMONOS flash memory for security applications
Takahiro Shimoi, Tomoya Saito, Hirokazu Nagase, Masayuki Izuna, Akihiko Kanda, Takashi Ito, Takashi Kono (Renesas Electronics)
pp. 15 - 19

SDM2019-40
[Invited Talk] *
Tetsufumi Tanamoto (Teikyo Univ.)
pp. 21 - 26

SDM2019-41
Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)
pp. 27 - 30

SDM2019-42
[Invited Lecture] 3300V Scaled IGBT Switched by 5V Gate Drive
Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.)
pp. 31 - 34

SDM2019-43
[Invited Talk] Low-Noise Low-Power MEMS Accelerometer with Digital Noise-Reduction Techniques
Yuki Furubayashi, Takashi Oshima, Yudai Kamada, Atsushi Isobe (Hitachi, Ltd.)
pp. 35 - 40

SDM2019-44
A study of the method to extend a distance for transferring power in a WPT system by using a Q-value enhancement technique
Yasuhiro Sugimoto, Touma Suzuki (Chuo Univ.)
pp. 41 - 46

SDM2019-45
[Invited Talk] A study on a ferroelectric transistor memory with ultrathin IGZO channel
Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo)
pp. 59 - 62

SDM2019-46
Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs
Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)
pp. 63 - 66

SDM2019-47
[Invited Talk] A 28nm 600MHz Automotive Flash Microcontroller with Virtualization-Assisted Processor for Next-Generation Automotive Architecture supporting ISO26262 ASIL-D
Naoto Okumura, Sugako Otani, Norimasa Otsuki, Yasufumi Suzuki, Shohei Maeda, Tomonori Yanagita, Takao Koike, Masao Ito, Minoru Uemura, Yasuhisa Shimazaki, Toshihiro Hattori, Noriaki Sakamoto, Hiroyuki Kondo (Renesas Electronics Corp.)
pp. 67 - 71

SDM2019-48
Interface with Opamp Output-Impedance Calibration Technique for a Large Integrated 2-D Resistive Sensor Array
Yohsuke Shiiki, Hiroki Ishikuro (Keio Univ.)
pp. 73 - 78

SDM2019-49
Evaluation of IC-Chip Noise Reduction using Magnetic Materials
Kosuke Jike, Koh Watanabe, Satoshi Tanaka, Noriyuki Miura, Makoto Nagata (Kobe Univ), Akihiro Takahashi, Yasunori Miyazawa, Masahiro Yamaguchi (Tohoku Univ)
pp. 79 - 83

SDM2019-50
[Invited Talk] Demonstration of Ag Ionic Memory Cell Array for Terabit-Scale High-Density Application
Reika Ichihara, Shosuke Fujii, Takuya Konno, Marina Yamaguchi, Harumi Seki, Hiroki Tanaka, Dandan Zhao, Yoko Yoshimura, Masumi Saitoh, Masato Koyama (TMC)
pp. 85 - 88

SDM2019-51
Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET”
Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK)
pp. 89 - 93

SDM2019-52
Ultra Low power rectenna with super SS "PN-Body Tied SOI-FET"
Takuya Yamada, Jiro Ida, Takayuki Mori, Nobuhiko Yasumaru, Kenji Itoh (KIT), Koichiro Ishibashi (UEC)
pp. 95 - 98

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan