IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 118, Number 173

Integrated Circuits and Devices

Workshop Date : 2018-08-07 - 2018-08-09 / Issue Date : 2018-07-31

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Table of contents

ICD2018-14
[Invited Talk] Energy Harvesting Beat Sensors and Potential Applications -- Realization of Low Power, Low Cost, and High Accuracy IoT Sensors --
Koichiro Ishibashi (UEC)
pp. 11 - 14

ICD2018-15
Comparison of Sensitivity to Soft Errors of NMOS and PMOS Transistors by Using Three Types of Stacking Latches in an FDSOI process
Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT)
pp. 15 - 20

ICD2018-16
[Invited Talk] Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors
Hideyuki Tomizawa, Yoshihiko Kurui (Toshiba), Ippei Akita (AIST), Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Hideki Shibata (Toshiba)
pp. 21 - 24

ICD2018-17
[Invited Talk] Fabrication and Characterization of SOI-CMOS Using Minimal-Fab and Mega-Fab Hybrid Process
Yongxun Liu, Hiroyuki Tanaka (AIST), Kazuhiro Koga, Kazushige Sato (MINIMAL), Sommawan Khumpuang, Masayoshi Nagao, Takashi Matsukawa, Shiro Hara (AIST)
pp. 25 - 30

ICD2018-18
Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK)
pp. 31 - 34

ICD2018-19
A 0.6V 9bit PWM Differential Arithmetic Circuit
Fumiya Kojima, Tomochika Harada (Yamagata Univ)
pp. 35 - 40

ICD2018-20
A 65nm SOTB Based-On Code-Modulated Synchronized-OOK Transmitter for Normally-Off Wireless Sensor Networks
Van-Trung Nguyen, Ryo Ishikawa, Koichiro Ishibashi (The UEC)
pp. 41 - 46

ICD2018-21
[Invited Talk] A Battery Management System for Wireless Sensor Devices
Ken-ichi Kawasaki, Jun-ichi Nagata, Hiroyuki Nakamoto (Fujitsu Labs.)
pp. 47 - 52

ICD2018-22
Power Consumption Estimation by Die Temperature for Processors Implemented on FPGA
Hiroaki Kaneko, Akinori Kanasugi (Tokyo Denki Univ.)
pp. 53 - 58

ICD2018-23
[Invited Talk] Research Progress on Resistance Change Device Based on Oxide Materials -- Application for Non-volatile Memory and Neuromorphic Device --
Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, Hiroyuki Akinaga (AIST)
pp. 59 - 64

ICD2018-24
Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs
Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo)
pp. 65 - 70

ICD2018-25
[Invited Talk] Neuromorphic Operation using an Atom/Ion Movement-Type Device
Takeo Ohno (Oita Univ.)
pp. 71 - 72

ICD2018-26
Measurements and Analysis of Power Supply Noise in Digital IC Chip
Kosuke Jike, Akihiro Tsukioka, Ryohei Sawada, Koh Watanabe, Noriyuki Miura, Makoto Nagata (Kobe Univ)
pp. 77 - 82

ICD2018-27
[Invited Lecture] A Highly Symmetrical 10T 2-Read/Write Dual-port SRAM Bitcell Design In 28nm High-k/Metal-gate Planar Bulk CMOS Technology
Yuichiro Ishii, Miki Tanaka, Makoto Yabuuchi, Yohei Sawada, Shinji Tanaka, Koji Nii (Renesas), Tien Yu Lu, Chun Hsien Huang, Shou Sian Chen, Yu Tse Kuo, Ching Cheng Lung, Osbert Cheng (UMC)
pp. 83 - 88

ICD2018-28
[Invited Talk] CMOS Annealing Machine for Combinatorial Optimization Problems
Masanao Yamaoka (Hitachi)
p. 89

ICD2018-29
Proposal of reconfigurable system LSI with 3D flashtechnology and its application to combinationlogic, FF circuit and FPGA
Shigeyoshi Watanabe (Shonan Insti. of Tech.)
pp. 91 - 94

ICD2018-30
Study of new stacked type logic circuit with fabrication technology of 3D NAND flash memory -- Comparison with conventional LUT scheme, and planar typescheme --
Fumiya Suzuki, Sigeyoshi Watanabe (Shonan Inst. of Tech.)
pp. 95 - 100

ICD2018-31
[Invited Talk] Flexible sensing system and venture startup
Shusuke Yoshimoto (PGV)
p. 101

ICD2018-32
[Invited Talk] Non-Contact Unobtrusive Sensing of Multiple Vital Signals Using Capacitive Coupling -- Introduction of Cutting-Edge Researches --
Akinori Ueno (Tokyo Denki Univ.)
pp. 103 - 106

ICD2018-33
[Invited Talk] Wearable Monitoring Systems for Heart Rate Variability Analysis
Shintaro Izumi (Osaka Univ.)
pp. 107 - 108

ICD2018-34
Study of Impact of BTI's Local Layout Effect Including Recovery Effect on Various Standard-Cells in 10nm FinFET
Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani, Koji Nii (Renesas)
pp. 109 - 113

ICD2018-35
12-nm Fin-FET 3.0G-search/s 80-bit x 128-entry Dual-port Ternary CAM
Makoto Yabuuchi, Masao Morimoto, Koji Nii, Shinji Tanaka (Renesas)
pp. 115 - 120

ICD2018-36
Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo)
pp. 121 - 126

ICD2018-37
Device and Process Design for HfO2-Based Ferroelectric Tunnel Junction Memory with Large Tunneling Electroresistance Effect and Multi-level Cell
Masaharu Kobayashi, Yusaku Tagawa, Mo Fei, Toshiro Hiramoto (Univ. Tokyo)
pp. 127 - 130

ICD2018-38
[Invited Talk] Cu Atom Switch Technology toward 28nm Nonvolatile Programmable Logic
Ryusuke Nebashi, Naoki Banno, Makoto Miyamura, Ayuka Morioka, Bai Xu, Koichiro Okamoto, Noriyuki Iguchi, Hideaki Numata, Hiromitsu Hada, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada (NEC)
pp. 131 - 135

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan