Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2016-80
[Invited Talk]
Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well
Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT)
pp. 1 - 5
ED2016-81
Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT)
pp. 7 - 12
ED2016-82
[Invited Talk]
Millimeter wave and THz RF Circuitry design techniques based on InP and CMOS
Yoichi Kawano (Fujitsu lab.)
pp. 13 - 16
ED2016-83
Design and fabrication of terahertz detectors based on 180 nm CMOS process technology
Kosuke Wakita, Masayuki Ikebe (Hokkaido Univ.), Stevanus Arnold, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiroaki Minamide (RIKEN), Eiichi Sano (Hokkaido Univ.)
pp. 17 - 22
ED2016-84
Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration
Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Tadao Ishibashi (NTT Electronics Techno), Makoto Shimizu (NEL), Akira Satou (Tohoku Univ.)
pp. 23 - 28
ED2016-85
Liquid phase growth of GaSe crystal doped with amphoteric impurity Ge for highly efficient THz wave generation
Yohei Sato, Sue Zhao, Tadao Tanabe, Kensaku Maeda, Yutaka Oyama (Tohoku Univ.)
pp. 29 - 33
ED2016-86
Broadband characteristics modeling and radiation analysis of self-complementary bow-tie antennas towards terahertz emitters
Hirokazu Yamakura, Michihiko Suhara (Tokyo Metro. Univ.)
pp. 35 - 40
ED2016-87
Terahertz spectral imaging based on time-domain spectroscopy with hollow optical fiber.
Kosei Ito, Takashi Katagiri, Yuji Matsuura (Tohoku univ.)
pp. 41 - 45
ED2016-88
Non-Destructive Inspection of Bills by Terahertz Spectroscopic Imaging
Tadao Tanabe, Takashi Kimura, Kensaku Maeda (Tohoku Univ.), kouichi Goi (LAUREL BANK MACHINES), Yutaka Oyama (Tohoku Univ.)
pp. 47 - 48
ED2016-89
Terahertz response of nanocarbon materials
Takuya Miyajima (Hokkaido Univ.), Hisashi Sugime (Waseda Univ.), Kenta Sugawara, Takayuki Watanabe, Taiichi Otsuji (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.)
pp. 49 - 54
ED2016-90
Observation of Each Subcell in a Tandem Solar Cell Using Wavelength Tunable Laser Terahertz Emission Microscope
Shota Hamauchi, Iwao Kawayama, Yuji Sakai, Toshihito Umegaki (Osaka Univ.), Akira Ito, Hidetoshi Nakanishi (SCREEN), Hironaru Murakami (Osaka Univ.), Charles Schmuttenmaer (Yale Univ./Osaka Univ.), Masayoshi Tonouchi (Osaka Univ.)
pp. 55 - 60
ED2016-91
The effects of 70-300 GHz radiation on human cell cultures
Noriko Yaekashiwa, Sato Otsuki, Shin'ichiro Hayashi (RIKEN), Kodo Kawase (Nagoya Univ./RIKEN)
pp. 61 - 65
ED2016-92
Quantitative detection of copper surface cracks by terahertz reflection imaging
Kenta Kuroo, Kimura Takashi, Tanabe Tadao, Oyama Yutaka (Tohoku Univ.)
pp. 67 - 70
ED2016-93
[Invited Talk]
Input Power Optimization of a Tripler-Base 300-GHz CMOS Up-Conversion Mixer
Ruibing Dong (NICT), Kosuke Katayama (Hiroshima Univ.), Shinsuke Hara (NICT), Kyoya Takano (Hiroshima Univ.), Issei Watanabe, Norihiko Sekine, Akifumi Kasamatsu (NICT), Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima (Hiroshima Univ.)
pp. 71 - 74
ED2016-94
Linearity Measurement of SIS(Superconductor-Insulator-Superconductor) Mixer for Millimeter-Wave Radiometer
Naoki Akiyama, Tac Nakajima, Akira Mizuno, Tomoo Nagahama, Kazuji Suzuki (Nagoya Univ.), Yasunori Fujii (NAOJ)
pp. 75 - 79
ED2016-95
[Invited Talk]
Modeling of Resonant Tunneling Diodes and their Application to Short Distance Terahertz Wireless Communications
Sebastian Diebold, Masayuki Fujita, Tadao Nagatsuma (Osaka Univ.)
pp. 81 - 86
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.