Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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CPM2016-90
Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates
Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.)
pp. 1 - 4
CPM2016-91
Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy
Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.)
pp. 5 - 8
CPM2016-92
Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes
Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.)
pp. 9 - 14
CPM2016-93
Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates
Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.)
pp. 15 - 20
CPM2016-94
Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy
Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.)
pp. 21 - 26
CPM2016-95
Evaluating Current Collapse of GaN HEMT devices by Carrier Number
Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA)
pp. 27 - 30
CPM2016-96
Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric)
pp. 31 - 34
CPM2016-97
AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current
Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui)
pp. 35 - 39
CPM2016-98
Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate
Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki (Univ. Fukui)
pp. 41 - 44
CPM2016-99
Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process
Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.)
pp. 45 - 50
CPM2016-100
Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes
Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT)
pp. 51 - 54
CPM2016-101
MOCVD growth of rough-surface p-GaN and its application to InGaN/GaN MQW solar cells
Takuma Mori, Makoto Miyoshi, Takashi Egawa (NIT)
pp. 55 - 59
CPM2016-102
Growth and optical properties of semipolar AlGaN/AlN quantum wells on m-plane sapphire substrates
Issei Oshima (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN)
pp. 61 - 66
CPM2016-103
Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 67 - 70
CPM2016-104
Crystal growth of bulk AlN by a clean process
Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 71 - 74
CPM2016-105
Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer
Takuya Mino (Panasonic), Hideki Hirayama (RIKEN), Takayoshi Takano, Koji Goto, Mitsuhiko Ueda, Kenji Tsubaki (Panasonic)
pp. 75 - 78
CPM2016-106
Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip
Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.)
pp. 79 - 83
CPM2016-107
Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors
Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.)
pp. 85 - 88
CPM2016-108
Fabrication of TiO2 channel TFTs using room temperature atomic layer deposition and their application to light sensor
Ko Kikuchi, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ)
pp. 89 - 92
CPM2016-109
Optical design of organic solar cells using nanotexture and high-refractive-index glass
Shigeru Kubota, Yoshiki Harada (Yamagata Univ.), Takenori Sudo (Waseda Univ.), Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.)
pp. 93 - 95
CPM2016-110
Fabrication of artificial zeolite using atomic layer deposition at room temperature and application to Dye-Sensitized Solar Cells
Takahiro Imai, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.)
pp. 97 - 101
CPM2016-111
Characterization of electric properties for wide-gap semiconductors using terahertz time-domain elipsometry
Takashi Fujii (RITS/PNP), Kohei Tachi, Tsutomu Araki, Yasushi Nanishi (RITS), Toshiyuki Iwamoto, Yukinori Sato (PNP), Takshi Nagashima (Setsunan Univ.)
pp. 103 - 106
CPM2016-112
Growth and Conductivity Control of Corundum-Structured Gallium Oxides on Sapphire Substrates
Kazuaki Akaiwa, Kunio Ichino (Tottori Univ), Kentaro Kaneko, Shizuo Fujita (Kyoto Univ)
pp. 107 - 111
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.