IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 115, Number 439

Electronic Information Displays

Workshop Date : 2016-01-28 - 2016-01-29 / Issue Date : 2016-01-21

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Table of contents

EID2015-25
Power Reduction of MEMS Shutter Display by Temporal Smoothing of Image Signal
Masato Fujii, Tomokazu Shiga (Univ. of Electro-Communications)
pp. 1 - 4

EID2015-26
Driving Method Controls Color Retention of Electrochromic Display
Takanori Imazu (Kyushu Univ.), Kazuaki Tsuji, Hidekazu Yanaginuma, Atsushi Oshima (RICOH), Reiji Hattori (Kyushu Univ.)
pp. 5 - 8

EID2015-27
Observation of segregation of liquid crystal imaged by atomic force microscope
Yuki Kobayashi, Seiya Takahashi, Munehiro Kimura (Nagaoka Univ. of Tech.)
pp. 9 - 12

EID2015-28
Cellar Neural Network using Thin-Film Devices -- Operation Confirmation of Letter Recognition --
Mutsumi Kimura, Ryohei Morita, Sumio Sugisaki, Tokiyoshi Matsuda (Ryukoku Univ.)
pp. 21 - 24

EID2015-29
Artificial Retina using Thin-Film Devices -- Operation Confirmation by in vitro Experiment --
Mutsumi Kimura, Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda (Ryukoku Univ.)
pp. 25 - 28

EID2015-30
Preparation of ZnAl2O4 Thin Films by Multilayer Film Thermal Diffusion
Taro Ito, Satoru Kubota, Hiroko Kominami, Yoichiro Nakanishi, Kazuhiko Hara (Shizuoka Univ)
pp. 37 - 40

EID2015-31
Plasma treatment for source/drain regions of self-aligned InGaZnO thin-film transistors -- Effects of substrate bias during the plasma treatment of IGZO. --
Yusaku Magari, Tatsuya Toda, Hisao Makino, Mamoru Furuta (Kochi Univ. of Technol.)
pp. 41 - 44

EID2015-32
Synthesis and Photoluminescent Properties of Eu doped SrAl2O4
Taichi Akahori, Keisuke Hada, Hiroko Kominami, Yoichiro Nakanishi, Kazuhiko Hara (Shizuoka Univ.)
pp. 53 - 56

EID2015-33
Self-Alignment Vertical-Type Thin Film Transistors with IGZO as Transparent Oxide Semiconductor
Fumiaki Kurihara, Hiroyuki Okada, Shigeki Naka (Univ. of Toyama)
pp. 57 - 60

EID2015-34
Basic Research on Organic Light Emitting Diodes with Ferromagnetic Thin Film Electrode
Kazuki Banzai, Shigeki Naka, Hiroyuki Okada (Univ.Toyama)
pp. 61 - 64

EID2015-35
Negative type liquid crystal alignment on rubbed side chain polymers.
Youta Naganuma, Akira Kodate, Kyousuke Kudou, Rumiko Yamaguchi (Akita Univ.)
pp. 85 - 88

EID2015-36
Sensing operation based on AlGaN nanorings
Hoshi Takeshima, Tetsuya Kouno, Sho Suzuki (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.), Kazuhiko Hara (Shizuoka Univ.)
pp. 89 - 91

EID2015-37
Synthesis and Luminescence Properties of Mn4+ activated Red-emitting Phosphor
Takuya Hasegawa, Tsubasa Yoshizawa, Hiromi Mizobuchi, Sun Woog Kim, Kazuyoshi Uematsu, Kenji Toda, Mineo Sato (Niigata Univ.)
pp. 93 - 96

EID2015-38
Luminescence property of hexagonal boron nitride films grown on sapphire substrates by low-pressure CVD
Takaki Shimizu, Naoki Umehara, Atsushi Masuda, Kana Watanabe, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.)
pp. 97 - 100

EID2015-39
Study on Transflective LCD with Wave-Guide Structure
Toshihiro Muramatsu, Mizuki Kitadai, Yasufumi Iimura (TAT)
pp. 101 - 104

EID2015-40
Photoluminescent properties of Fe doped phosphors
Kento Akao, Tatsuyuki Tashiro, Hiroko Kominami (Shizuoka Univ.), Yoichiro Nakanishi, Kazuhiko Hara (Res.Inst.Electron.,Shizuoka Univ.), O. M. Marchylo (V. E. Lashkaryov Institute of Semiconductor Physics)
pp. 109 - 112

EID2015-41
Synthesis and Luminescent Properties of Eu2+-activated Alkaline and Alkaline Earth Silicate phosphor
Takenori Ishikawa, Takashi Kunimoto (Tokushima Bunri Univ), Dohoon Kim, Takatoshi Seto (Samsung R&D Institute Japan)
pp. 121 - 124

EID2015-42
Injection EL Devices Using CuAlS2:Mn Conductive Phosphor Thin Films
Takayoshi Adachi, Shouta Hayashi (Tottori Univ.), Tadashi Ishigaki (TiFREC), Koutoku Ohmi (Tottori Univ.)
pp. 125 - 128

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan