IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2015-10-29 - 2015-10-30 / Issue Date : 2015-10-22

SDM2015-71
[Invited Talk] Current situation and challenging for ion implantation technology
Yoshiki Nakashima, Nariaki Hamamoto, Shigeki Sakai, Hiroshi Onoda (NIC)
pp. 1 - 6

SDM2015-72
A study on Si surface flattening process by annealing Ar/H2ambient
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech)
pp. 7 - 12

SDM2015-73
Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 13 - 16

SDM2015-74
Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ.), Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa (LAPIS Semi. Miyagi)
pp. 17 - 22

SDM2015-75
[Invited Talk] Low-power and high-speed FPGA by adjacent integration of flash memory and CMOS logic
Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinichi Yasuda (Toshiba)
pp. 23 - 28

SDM2015-76
[Invited Talk] Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures
Hirokazu Ueda (TEL TDC), Peter Ventzek (TEL America), Masahiro Oka, Yuuki Kobayashi, Yasuhiro Sugimoto, Satoru Kawakami (TEL TDC)
pp. 29 - 33

SDM2015-77
A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa (Tohoku Univ.)
pp. 35 - 40

SDM2015-78
Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment
Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.)
pp. 41 - 44

SDM2015-79
[Invited Talk] Materials and process technologies for large-area sheet-type display
Yoshihide Fujisaki (NHK)
pp. 45 - 48

SDM2015-80
A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator
Yasutaka Maeda, Yeyuan Liu, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 49 - 52

SDM2015-81
Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering
Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ)
pp. 53 - 56

SDM2015-82
Investigation of stacked HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (Tokyo Tech)
pp. 57 - 62

SDM2015-83
Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller
Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 63 - 68

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan