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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW | 2022-11-15 10:50 |
Nagasaki | Fukue-Bunka-Kaikan (Primary: On-site, Secondary: Online) |
Continuous Class-F/Inverse-Class-F 2-GHz-Band GaN-HEMT Power Amplifiers Using 1-Port CRLH Transmission Lines Eri Tsuji, Soshi Aonuma, Shinichi Tanaka (Shibaura Inst. of Tech.)  MW2022-109 |
Highly efficient amplifiers capable of continuously processing harmonics over a wide bandwidth are attracting attention ... [more] | MW2022-109 pp.1-6 |
| AP | 2022-02-18 09:25 |
Online | Online | A Consideration of H-shaped-slot Patch Antenna with 3rd Harmonic Termination using Characteristic Mode Analysis Syunya Ban, Hayata Hirose (Nagoya Inst. of Tech.), Shinji Hara (Nagoya Univ.), Hiroshi Hirayama (Nagoya Inst. of Tech.) AP2021-167 |
In this paper, an H-shape slot patch antenna designed at 5.8 GHz with F-class load impedance for microwave power transfe... [more] | AP2021-167 pp.50-54 |
| WPT | 2021-03-05 15:15 |
Online | Online | Development of 920-MHz Band Rectifier Circuit on Wireless Power Transfer for Wearable Devices Kawai Katsumi, Naoki Shinohara, Tomohiko Mitani (Kyoto Univ.) WPT2020-51 |
Wearable devices equipped with vital sensors have been attracting attention as a method to acquire medical information c... [more] | WPT2020-51 pp.88-92 |
| AP, WPT (Joint) |
2020-01-24 12:55 |
Kagawa | Sunport Hall Takamatsu | Basic Study of Patch Antenna with Class-F Load Impedance for 2.45 GHz Microwave Power Transfer Takase Oshima, Hiroshi Hirayama (NITech) AP2019-171 WPT2019-54 |
A novel patch antenna with class-F load function for microwave power transfer is proposed. Conventionally, class-F load ... [more] | AP2019-171 WPT2019-54 pp.117-120(AP), pp.29-32(WPT) |
| MW | 2018-11-15 10:00 |
Nagasaki | Fukue Cultural Hall | 2-GHz-Band GaN HEMT Class-F Power Amplifiers Using CRLH-Transmission-Line-Stub Dual-Use Circuits for Harmonic Control and DC Biasing Tomoya Oda, Kento Saiki, Shinichi Tanaka (Shibaura Inst. of Tech.) MW2018-92 |
The next generation mobile communication systems impose challenging performance, size and cost requirements on the power... [more] | MW2018-92 pp.1-6 |
| MW | 2018-11-15 10:25 |
Nagasaki | Fukue Cultural Hall | Miniaturization of Harmonic Impedance Transformer and its Application to Class-F Amplifiers Kento Saiki, Shinichi Tanaka (Shibaura Inst. of Tech.), Ryo Ishikawa, Kazuhiko Honjo (Univ. of Electro-Communications) MW2018-93 |
A new method of miniaturizing the quarter-wavelength ($lambda$/4) harmonic impedance (Z) transformer in a class-F amplif... [more] | MW2018-93 pp.7-12 |
| MW, EMCJ, EST, IEE-EMC [detail] | 2017-10-20 10:45 |
Akita | Yupopo | A Simple Design of 2.45GHz Class-F Time-Reversal Rectifier Using Linear Theory Fuminori Myojin, Yohtaro Umeda (TUS) EMCJ2017-46 MW2017-98 EST2017-61 |
In this paper, a theoretical design of class-F time-reversal rectifier is proposed. By considering phase and amplitude o... [more] | EMCJ2017-46 MW2017-98 EST2017-61 pp.111-116 |
| ICD, MW | 2016-03-03 14:55 |
Hiroshima | Hiroshima University | Compact Harmonic Tuning Circuits for Class-F Amplifiers Using Negative Order Resonance Modes of CRLH Stub Lines South Koizumi, Kengo Saito, Shinichi Tanaka (Shibaura Institute of Tech.) MW2015-197 ICD2015-120 |
Compact harmonic tuning circuits for class-F amplifier are realized using composite right-/left-handed transmission line... [more] | MW2015-197 ICD2015-120 pp.135-140 |
| WPT, MW | 2015-04-16 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4 |
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] | WPT2015-4 MW2015-4 pp.15-19 |
| MW, ICD | 2015-03-05 10:45 |
Fukui | University of Fukui | [Invited Talk]
An S-Band GaN High Efficiency Power Amplifier with Harmonic Processing Keigo Nakatani, Toshio Ishizaki (Ryukoku Univ.) MW2014-204 ICD2014-117 |
In this report, a 2.45GHz high efficiency power amplifier, fabricated for the Student Design Competition in Asia-Pacific... [more] | MW2014-204 ICD2014-117 pp.13-17 |
| MW, ICD | 2015-03-05 11:05 |
Fukui | University of Fukui | [Invited Talk]
A Design and Fabrication of 2.45GHz-Band High Efficiency Class-F Power Amplifier using GaN-HEMT Gaku Nishio, Toshio Ishizaki (Ryukoku Univ.) MW2014-205 ICD2014-118 |
For APMC2014 Student Design Competition, a GaN-HEMT amplifier was designed. First, a basic amplifier that does not take ... [more] | MW2014-205 ICD2014-118 pp.19-22 |
| MW | 2013-05-31 15:00 |
Kyoto | Ryukoku Univ. | A 2.1GHz-Band 20W GaN Power Amplifier with Class-F Circuit Considering Parasitic Elements Keigo Nakatani, Toshio Ishizaki (Ryukoku Univ.) MW2013-24 |
In this paper, a design method of Class-F power amplifier considering parasitic elements will be shown. Recently, many s... [more] | MW2013-24 pp.83-87 |
| ICD | 2012-12-18 14:20 |
Tokyo | Tokyo Tech Front | High Efficiency 315MHz Transmitter with Dual Supply Voltage Scheme Shunta Iguchi (Univ. of Tokyo), Akira Saito, Kazunori Watanabe (STARC), Takayasu Sakurai, Makoto Takamiya (Univ. of Tokyo) ICD2012-119 |
Dual power supply voltage (VDD) scheme is proposed to increase the efficiency of a power amplifier (PA) with small outpu... [more] | ICD2012-119 pp.121-126 |
| MW, ED | 2009-01-16 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer Akihiro Ando, Yoichiro Takayama, Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo (The Univ of Electro-Communications) ED2008-222 MW2008-187 |
This paper describes a high-efficiency Class-F GaN HEMT power amplifier linearized by a diode predistorter. The series d... [more] | ED2008-222 MW2008-187 pp.135-139 |
| MW | 2008-08-29 11:20 |
Osaka | Osaka-Univ. (Toyonaka) | Microwave Inverse Class-F GaN HEMT Amplifier using Harmonic Treatment Circuit Constructed with Lumped Circuit Elements Ryo Ishikawa, Yasuyuki Abe, Kazuhiko Honjo (UEC) MW2008-94 |
We have developed a microwave inverse class-F GaN HEMT amplifier using a harmonic treatment circuit constructed with lum... [more] | MW2008-94 pp.87-92 |
| MW | 2008-08-29 11:45 |
Osaka | Osaka-Univ. (Toyonaka) | A Design and Fabrication of 5.8 GHz Class-F Amplifier using GaN HEMT Kenta Kuroda, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2008-95 |
We have developed the class-F high-efficiency amplifier using an AlGaN/GaN HEMT at 5.8 GHz for microwave power transmiss... [more] | MW2008-95 pp.93-98 |
| EMCJ, MW | 2006-10-26 14:30 |
Aomori | Hachinohe Institute of Technology | Linearization of a Microwave Class-F Amplifier Using an Analog Predistortion Circuit Hiroshi Matsubara (Hokkaido Univ.), Norihisa Miyadai (Nihon Dengyo Kosaku), Toshio Nojima (Hokkaido Univ.) EMCJ2006-59 MW2006-115 |
The class-F amplifier operation mode enables a high efficiency power performance even at microwave frequencies. However,... [more] | EMCJ2006-59 MW2006-115 pp.47-52 |
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