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| Chair |
|
Tatsuya Kunikiyo (Renesas) |
| Vice Chair |
|
Takahiro Shinada (Tohoku Univ.) |
| Secretary |
|
Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) |
| Assistant |
|
Hiroya Ikeda (Shizuoka Univ.) |
|
| Conference Date |
Tue, Jun 20, 2017 13:00 - 17:10 |
| Topics |
Material Science and Process Technology for MOS Devices and Memories |
| Conference Place |
|
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Tue, Jun 20 PM
13:00 - 17:10 |
| (1) |
13:00-13:20 |
[Invited Lecture]
Scintillators and Ga2O3 Semiconductors  SDM2017-21 |
Go Okada, Yuki Usui, Naoki Kawano, Noriaki Kawaguchi, Takayuki Yanagida (NAIST) |
| (2) |
13:20-13:40 |
[Invited Lecture]
Development of Quantum Imaging Detector using SOI Technology
-- Looking Elementary Particles and X-rays with Semiconductor -- SDM2017-22 |
Yasuo Arai (KEK) |
| (3) |
13:40-14:00 |
[Invited Lecture]
Studies on semiconducting gas sensors with WO3 nanoparticles for skin-emitted acetone detection SDM2017-23 |
Yuki Yamada, Satoshi Hiyama (NTT DOCOMO), Hitoshi Tabata (Univ. of Tokyo) |
| (4) |
14:00-14:20 |
[Invited Lecture]
Sensing technologies using nitrogen-vacancy centers in diamond SDM2017-24 |
Takayuki Iwasaki, Mutsuko Hatano (Tokyo Inst. of Tech.) |
| |
14:20-14:35 |
Break ( 15 min. ) |
| (5) |
14:35-14:55 |
Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements SDM2017-25 |
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
| (6) |
14:55-15:15 |
Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application SDM2017-26 |
Akio Ohta, Yusuke Kato, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
| (7) |
15:15-15:35 |
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate SDM2017-27 |
Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.) |
| (8) |
15:35-15:55 |
Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs SDM2017-28 |
Takamasa Kawanago, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda (Tokyo Inst. of Tech.) |
| |
15:55-16:10 |
Break ( 15 min. ) |
| (9) |
16:10-16:30 |
Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization |
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) |
| (10) |
16:30-16:50 |
Characterization of defects in Ge1-xSnx gate stack structure SDM2017-29 |
Yuichi Kaneda, Shinnichi ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| (11) |
16:50-17:10 |
Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface SDM2017-30 |
Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Invited Lecture | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E- :        e3   |
Last modified: 2017-04-19 17:20:55
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