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=============================================== Technical Committee on Electron Devices (ED) Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba) Secretary: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC) Assistant: Masataka Higashiwaki (NICT), Toshiyuki Oishi (Saga Univ.) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Satoru Noge (Numazu National College of Tech.) Vice Chair: Fumihiko Hirose (Yamagata Univ.) Secretary: Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.) Assistant: Takashi Sakamoto (NTT), Yuichi Nakamura (Toyohashi Univ. of Tech.) =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.) Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) Assistant: Hiroya Ikeda (Shizuoka Univ.) DATE: Thu, May 25, 2017 13:30 - 17:05 Fri, May 26, 2017 09:30 - 11:10 PLACE: Venture Hall (3F), VBL, Nagoya University(Furo-cho, Chigusa-ku, Nagoya 464-8601, JAPAN. http://www.vbl.nagoya-u.ac.jp/access-e.html. Prof. Seiichi Miyazaki) TOPICS: ---------------------------------------- Thu, May 25 PM (13:30 - 17:05) ---------------------------------------- (1) 13:30 - 13:55 Fabrication and characterization of flexible organic thin film solar cells for indoor light harvesting Yusuke Kawamatsu, Mizuki Ito, Shinya Kato, Tetsuo Soga, Naoki Kishi (NITech) (2) 13:55 - 14:20 Study on thermal evaporation of tin sulfide films in vacuum Yasushi Takano, Yukio Suganuma (Shizuoka Univ.) (3) 14:20 - 14:45 Fabrication of NiO thin film by electrochemical deposition Miki Koyama, Masaya Ichimura (NITech) (4) 14:45 - 15:10 Fabrication of n-type AlOx thin films by drop photochemical deposition Masanari Umemura, Masaya Ichimura (NITech) ----- Break ( 15 min. ) ----- (5) 15:25 - 15:50 Electrochemical deposition of Cu-doped p-type Fe-O thin films Satoshi Kobayashi, Masaya Ichimura (NITech) (6) 15:50 - 16:15 Development of Plasmonic Logical Circuit Using Multimode Interference Ryo Watanabe, Masashi Ota, Yudai Kikuchi, Tomohiro Hirano, Yuya Ishii, Mitsuo Fukuda (TUT) (7) 16:15 - 16:40 Development of plasmonic retention circuit using bow-tied metallic waveguide Takahiro Furuki, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT) (8) 16:40 - 17:05 Development of plasmonic multiplexer/demultiplexer and inverter Kotaro Nakayama, Asahi Sumimura, Yuta Tonooka, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT) ---------------------------------------- Fri, May 26 AM (09:30 - 11:10) ---------------------------------------- (9) 09:30 - 09:55 Heteroepitaxial Growth of InGaSb Thin Films on GaSb/Si(111)-√3×√3-Ga Surface Phase Md.Monzur-ul-akhir, Masayuki Mori, Hiroya Shimoyama, Koichi Maezawa (Univ. of Toyama) (10) 09:55 - 10:20 Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) (11) 10:20 - 10:45 Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) (12) 10:45 - 11:10 N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Electron Devices (ED) === # FUTURE SCHEDULE: Wed, Aug 9, 2017 - Thu, Aug 10, 2017: Kikai-Shinko-Kaikan Bldg. [Wed, Jun 14], Topics: Sensor, MEMS, general # SECRETARY: Koji Matsunaga（NEC) TEL：+81-44-435-8348 FAX：+81-44-455-8253 E-mail： k-      fp   c Toshikazu Suzuki (JAIST) TEL : +81-761-51-1441 Fax : +81-761-51-1455 E-mail :  si  jaist === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Jul 21, 2017 - Sat, Jul 22, 2017: [Mon, Jun 5] Thu, Aug 31, 2017 - Fri, Sep 1, 2017: [Mon, Jun 19] === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Tue, Jun 20, 2017: Campus Innovation Center Tokyo [Mon, Apr 17], Topics: Material Science and Process Technology for MOS Devices and Memories Mon, Jul 31, 2017 - Wed, Aug 2, 2017: Hokkaido-Univ. Multimedia Education Bldg. [Thu, Jun 8], Topics: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:      e3 Last modified: 2017-03-17 19:31:57 |
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