Mon, Dec 12 PM
13:00 - 17:25 |
| (1) |
13:00-13:25 |
Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates |
Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) |
| (2) |
13:25-13:50 |
Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy |
Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) |
| (3) |
13:50-14:15 |
Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes |
Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.) |
| (4) |
14:15-14:40 |
Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates |
Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) |
| (5) |
14:40-15:05 |
Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy |
Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) |
| |
15:05-15:20 |
Break ( 15 min. ) |
| (6) |
15:20-15:45 |
Evaluating Current Collapse of GaN HEMT devices by Carrier Number |
Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) |
| (7) |
15:45-16:10 |
Normally-off operation of planar GaN MOS-HFET |
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) |
| (8) |
16:10-16:35 |
AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current |
Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) |
| (9) |
16:35-17:00 |
Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate |
Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki (Univ. Fukui) |
| (10) |
17:00-17:25 |
Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process |
Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) |
Tue, Dec 13 AM
08:40 - 09:55 |
| (11) |
08:40-09:05 |
Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes |
Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) |
| (12) |
09:05-09:30 |
MOCVD growth of rough-surface p-GaN and its application to InGaN/GaN MQW solar cells |
Takuma Mori, Makoto Miyoshi, Takashi Egawa (NIT) |
| (13) |
09:30-09:55 |
Growth and optical properties of semipolar AlGaN/AlN quantum wells on m-plane sapphire substrates |
Issei Oshima (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN) |
| |
09:55-10:05 |
Break ( 10 min. ) |
Tue, Dec 13 AM
10:05 - 11:45 |
| (14) |
10:05-10:30 |
Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells |
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (15) |
10:30-10:55 |
Crystal growth of bulk AlN by a clean process |
Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (16) |
10:55-11:20 |
Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer |
Takuya Mino (Panasonic), Hideki Hirayama (RIKEN), Takayoshi Takano, Koji Goto, Mitsuhiko Ueda, Kenji Tsubaki (Panasonic) |
| (17) |
11:20-11:45 |
Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip |
Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) |
Tue, Dec 13 PM
13:00 - 15:30 |
| (18) |
13:00-13:25 |
Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors |
Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.) |
| (19) |
13:25-13:50 |
Fabrication of TiO2 channel TFTs using room temperature atomic layer deposition and their application to light sensor |
Ko Kikuchi, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) |
| (20) |
13:50-14:15 |
Optical design of organic solar cells using nanotexture and high-refractive-index glass |
Shigeru Kubota, Yoshiki Harada (Yamagata Univ.), Takenori Sudo (Waseda Univ.), Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.) |
| (21) |
14:15-14:40 |
Fabrication of artificial zeolite using atomic layer deposition at room temperature and application to Dye-Sensitized Solar Cells |
Takahiro Imai, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) |
| (22) |
14:40-15:05 |
Characterization of electric properties for wide-gap semiconductors using terahertz time-domain elipsometry |
Takashi Fujii (RITS/PNP), Kohei Tachi, Tsutomu Araki, Yasushi Nanishi (RITS), Toshiyuki Iwamoto, Yukinori Sato (PNP), Takshi Nagashima (Setsunan Univ.) |
| (23) |
15:05-15:30 |
Growth and Conductivity Control of Corundum-Structured Gallium Oxides on Sapphire Substrates |
Kazuaki Akaiwa, Kunio Ichino (Tottori Univ), Kentaro Kaneko, Shizuo Fujita (Kyoto Univ) |
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