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Technical Committee on Electron Device (ED)
Chair: Tetsu Kachi (Toyota Central R&D Labs.) Vice Chair: Naoki Hara (Fujitsu Labs.)
Secretary: Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic)
Assistant: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)

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Technical Committee on Microwaves (MW)
Chair: Takashi Ohira (Toyohashi Univ. of Tech.)
Vice Chair: Futoshi Kuroki (Kure National College of Tech.), Masashi Nakatsugawa (NTT), Kenji Kawakami (Mitsubishi Electric)
Secretary: Hiroyuki Kayano (Toshiba), Tadashi Kawai (Univ. of Hyogo)
Assistant: Hirokazu Kamoda (ATR), Hirokazu Kamoda (Utsunomiya Univ.)

DATE:
Thu, Jan 17, 2013 14:30 - 17:15
Fri, Jan 18, 2013 10:00 - 15:45

PLACE:
(3-5-8, Shiba-koen, Minato-ku, Tokyo 105-0011, Japan. +81-3-3433-6691)

TOPICS:
Compound Semiconductor IC, High-speed and high-frequency devices, Microwave Technologies, etc.

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Thu, Jan 17 PM (14:30 - 17:15)
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(1) 14:30 - 14:55
Design of NRD Guide at 94 GHz
Futoshi Kuroki, Shingo Inoue, Tomonori Morita, Yohei Kubo (KNCT)

(2) 14:55 - 15:20
A Study of RF Energy Harvesting from Broadcasting and Communication Radio Wave
Shoichi Kitazawa, Hirokazu Kamoda, Masahiro Hanazawa, Susumu Ano, Hiroshi Ban, Kiyoshi Kobayashi (ATR)

(3) 15:20 - 15:45
Q Factor Simulation and SSB Noise Measurement for Transmission Line Feedback FET Oscillators with FET Parasitic Elements
Takanari Minami, Sonshu Sakihara, Tuya Wuren, Hideyuki Uehara, Takashi Ohira (TUT)

----- Break ( 15 min. ) -----

(4) 16:00 - 16:25
Double-layer Corporate-feed Hollow-waveguide Slot Array Antenna and Its Data Transmission Test Results in millimeter wave band
Dongjin Kim, Jiro Hirokawa, Makoto Ando (Tokyo Institute of Tech.), Jun Takeuchi, Akihiko Hirata (NTT), Tadao Nagatsuma (Osaka Univ.)

(5) 16:25 - 16:50
120-GHz-band 20-Gb/s QPSK Transmitter and Receiver modules
Hiroyuki Takahashi, Toshihiko Kosugi, Akihiko Hirata, Jun Takeuchi, Koichi Murata, Naoya Kukutsu (NTT)

(6) 16:50 - 17:15
Evaluation of fade slope due to weather for 120-GHz-band wireless link
Akihiko Hirata, Jun Takeuchi, Hiroyuki Takahashi, Naoya Kukutsu (NTT)

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Fri, Jan 18 AM (10:00 - 15:45)
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(7) 10:00 - 10:25
Low-loss On Chip CMOS Patterned Ground Coplanar Waveguide Transmission Line for Millimeter-wave Technology
Dayang Azra Binti Awang Mat, Ramesh K. Pokharel, Rohana Sapawi, Haruichi Kanaya, Keiji Yoshida (Kyushu Univ.)

(8) 10:25 - 10:50
A Study on 0-dB Coupler Using Half-mode Groove Waveguide for Wireless Power Transmission
Seiya Mori, Mitsuyoshi Kishihara, Kensuke Okubo, Hironori Takimoto (Okayama Prefectural Univ.), Isao Ohta (Univ. of Hyogo)

(9) 10:50 - 11:15
2.6GHz Broadband 40W GaN HEMT Doherty Amplifier
Norihiro Yoshimura, Naoki Watanabe, Hiroaki Deguchi, Norihiko Ui (SEDI)

(10) 11:15 - 11:40
The study of SSPS GaN amplifier for high-efficiency operation by gate length
Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.)

----- Lunch Break ( 80 min. ) -----

(11) 13:00 - 13:25
GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters
Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)

(12) 13:25 - 13:50
Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs
Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.)

(13) 13:50 - 14:15
Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs
Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)

----- Break ( 15 min. ) -----

(14) 14:30 - 14:55
Analysis of drain leakage current in AlGaN/GaN HEMT
Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology)

(15) 14:55 - 15:20
AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.)

(16) 15:20 - 15:45
InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Wed, Feb 27, 2013 - Thu, Feb 28, 2013: Hokkaido Univ. [Fri, Dec 7], Topics: Functional nanodevices and related technologies
Thu, Apr 18, 2013 - Fri, Apr 19, 2013: [Sat, Feb 16], Topics: Organic Devices, Oxide Devices, and others

# SECRETARY:
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E-mail :

Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-mail：

=== Technical Committee on Microwaves (MW) ===
# FUTURE SCHEDULE:

Feb, 2013: Recess
Wed, Mar 6, 2013 - Fri, Mar 8, 2013: Hiroshima Univ. [Mon, Jan 14], Topics: Microwave Technologies
Fri, Apr 19, 2013: Kikai-Shinko-Kaikan Bldg. [Fri, Feb 8], Topics: Superconducting microwave technologies, etc.

# SECRETARY:
Hirokazu Kamoda (ATR)
TEL:0774-95-1541
FAX:0774-95-1508
E-mail: