|
|
| Chair |
|
Tetsu Kachi (Toyota Central R&D Labs.) |
| Vice Chair |
|
Naoki Hara (Fujitsu Labs.) |
| Secretary |
|
Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic) |
| Assistant |
|
Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC) |
|
|
|
| Chair |
|
Takashi Ohira (Toyohashi Univ. of Tech.) |
| Vice Chair |
|
Futoshi Kuroki (Kure National College of Tech.), Masashi Nakatsugawa (NTT), Kenji Kawakami (Mitsubishi Electric) |
| Secretary |
|
Hiroyuki Kayano (Toshiba), Tadashi Kawai (Univ. of Hyogo) |
| Assistant |
|
Hirokazu Kamoda (ATR), Hirokazu Kamoda (Utsunomiya Univ.) |
|
| Conference Date |
Thu, Jan 17, 2013 14:30 - 17:15
Fri, Jan 18, 2013 10:00 - 15:45 |
| Topics |
Compound Semiconductor IC, High-speed and high-frequency devices, Microwave Technologies, etc. |
| Conference Place |
|
| Address |
3-5-8, Shiba-koen, Minato-ku, Tokyo 105-0011, Japan |
Contact
Person |
+81-3-3433-6691 |
Thu, Jan 17 PM
14:30 - 17:15 |
| (1) |
14:30-14:55 |
Design of NRD Guide at 94 GHz |
Futoshi Kuroki, Shingo Inoue, Tomonori Morita, Yohei Kubo (KNCT) |
| (2) |
14:55-15:20 |
A Study of RF Energy Harvesting from Broadcasting and Communication Radio Wave |
Shoichi Kitazawa, Hirokazu Kamoda, Masahiro Hanazawa, Susumu Ano, Hiroshi Ban, Kiyoshi Kobayashi (ATR) |
| (3) |
15:20-15:45 |
Q Factor Simulation and SSB Noise Measurement for Transmission Line Feedback FET Oscillators with FET Parasitic Elements |
Takanari Minami, Sonshu Sakihara, Tuya Wuren, Hideyuki Uehara, Takashi Ohira (TUT) |
| |
15:45-16:00 |
Break ( 15 min. ) |
| (4) |
16:00-16:25 |
Double-layer Corporate-feed Hollow-waveguide Slot Array Antenna and Its Data Transmission Test Results in millimeter wave band |
Dongjin Kim, Jiro Hirokawa, Makoto Ando (Tokyo Institute of Tech.), Jun Takeuchi, Akihiko Hirata (NTT), Tadao Nagatsuma (Osaka Univ.) |
| (5) |
16:25-16:50 |
120-GHz-band 20-Gb/s QPSK Transmitter and Receiver modules |
Hiroyuki Takahashi, Toshihiko Kosugi, Akihiko Hirata, Jun Takeuchi, Koichi Murata, Naoya Kukutsu (NTT) |
| (6) |
16:50-17:15 |
Evaluation of fade slope due to weather for 120-GHz-band wireless link |
Akihiko Hirata, Jun Takeuchi, Hiroyuki Takahashi, Naoya Kukutsu (NTT) |
Fri, Jan 18 AM
10:00 - 15:45 |
| (7) |
10:00-10:25 |
Low-loss On Chip CMOS Patterned Ground Coplanar Waveguide Transmission Line for Millimeter-wave Technology |
Dayang Azra Binti Awang Mat, Ramesh K. Pokharel, Rohana Sapawi, Haruichi Kanaya, Keiji Yoshida (Kyushu Univ.) |
| (8) |
10:25-10:50 |
A Study on 0-dB Coupler Using Half-mode Groove Waveguide for Wireless Power Transmission |
Seiya Mori, Mitsuyoshi Kishihara, Kensuke Okubo, Hironori Takimoto (Okayama Prefectural Univ.), Isao Ohta (Univ. of Hyogo) |
| (9) |
10:50-11:15 |
2.6GHz Broadband 40W GaN HEMT Doherty Amplifier |
Norihiro Yoshimura, Naoki Watanabe, Hiroaki Deguchi, Norihiko Ui (SEDI) |
| (10) |
11:15-11:40 |
The study of SSPS GaN amplifier for high-efficiency operation by gate length |
Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) |
| |
11:40-13:00 |
Lunch Break ( 80 min. ) |
| (11) |
13:00-13:25 |
GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters |
Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
| (12) |
13:25-13:50 |
Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs |
Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.) |
| (13) |
13:50-14:15 |
Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs |
Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
| |
14:15-14:30 |
Break ( 15 min. ) |
| (14) |
14:30-14:55 |
Analysis of drain leakage current in AlGaN/GaN HEMT |
Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) |
| (15) |
14:55-15:20 |
AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks |
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) |
| (16) |
15:20-15:45 |
InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds |
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- :          t 
Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-：     zo pa   c |
| MW |
Technical Committee on Microwaves (MW) [Latest Schedule]
|
| Contact Address |
Hirokazu Kamoda (ATR)
TEL:0774-95-1541
FAX:0774-95-1508
E-:  atr
or Hiroyuki Kayano (Toshiba)
TEL:+81-44-549-2110
FAX:+81-44-520-1801
E-:       ba |
Last modified: 2012-11-27 08:54:47
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