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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.)
Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant: Hiroya Ikeda (Shizuoka Univ.)

DATE:
Tue, Jun 20, 2017 13:00 - 17:10

PLACE:

TOPICS:
Material Science and Process Technology for MOS Devices and Memories

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Tue, Jun 20 PM (13:00 - 17:10)
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(1) 13:00 - 13:20
[Invited Lecture]
Scintillators and Ga2O3 Semiconductors
Go Okada, Yuki Usui, Naoki Kawano, Noriaki Kawaguchi, Takayuki Yanagida (NAIST)

(2) 13:20 - 13:40
[Invited Lecture]
Development of Quantum Imaging Detector using SOI Technology
-- Looking Elementary Particles and X-rays with Semiconductor --
Yasuo Arai (KEK)

(3) 13:40 - 14:00
[Invited Lecture]
Studies on semiconducting gas sensors with WO3 nanoparticles for skin-emitted acetone detection
Yuki Yamada, Satoshi Hiyama (NTT DOCOMO), Hitoshi Tabata (Univ. of Tokyo)

(4) 14:00 - 14:20
[Invited Lecture]
Sensing technologies using nitrogen-vacancy centers in diamond
Takayuki Iwasaki, Mutsuko Hatano (Tokyo Inst. of Tech.)

----- Break ( 15 min. ) -----

(5) 14:35 - 14:55
Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

(6) 14:55 - 15:15
Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application
Akio Ohta, Yusuke Kato, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

(7) 15:15 - 15:35
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate
Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.)

(8) 15:35 - 15:55
Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs
Takamasa Kawanago, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda (Tokyo Inst. of Tech.)

----- Break ( 15 min. ) -----

(9) 16:10 - 16:30
Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech)

(10) 16:30 - 16:50
Characterization of defects in Ge1-xSnx gate stack structure
Yuichi Kaneda, Shinnichi ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(11) 16:50 - 17:10
Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface
Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)

# Information for speakers
General Talk will have 15 minutes for presentation and 5 minutes for discussion.
Invited Lecture will have 15 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Mon, Jul 31, 2017 - Wed, Aug 2, 2017: Hokkaido-Univ. Multimedia Education Bldg. [Thu, Jun 8], Topics: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail: