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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tetsuro Endo (Tohoku Univ.) Vice Chair: Yasuo Nara (Fujitsu Microelectronics)
Secretary: Yukinori Ono (NTT), Katsunori Onishi (Kyushu Inst. of Tech.)
Assistant: Shintaro Nomura (Univ. of Tsukuba)

DATE:
Tue, Jun 22, 2010 09:30 - 17:30

PLACE:

TOPICS:
Science and Technology for Dielectric Thin Films for MIS Devices

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Tue, Jun 22 AM (09:30 - 12:25)
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(1) 09:30 - 09:55
A Compact Modeling of Si Nanowire MOSFETs
-- Ballistic and Quasi-Ballistic Transport --
Kenji Natori (Tokyo Inst. of Tech.)

(2) 09:55 - 10:20
Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts
Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST)

(3) 10:20 - 10:45
An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET
Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.)

(4) 10:45 - 11:10
Nickel silicide Encroachment in Silicon Nanowire and its Suppression
Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.)

----- Break ( 15 min. ) -----

(5) 11:25 - 11:45
Schottky-barrier modulation by segregation layers at metal/Si interfaces: first-principles study on chemical trend
Kyosuke Kobinata, Yusuke Maruta, Takashi Nakayama (Chiba Univ.)

(6) 11:45 - 12:05
Characterization of Chemical Bonding Features and Electrical Properties of Ge MIS and Ge/Metal Structures
Tomohiro Fujioka, Tatsuya Bando, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)

(7) 12:05 - 12:25
Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms
DongHun Lee, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.)

----- Lunch Break ( 60 min. ) -----

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Tue, Jun 22 PM (13:25 - 17:30)
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(8) 13:25 - 13:45
The Crystalline Structures and Electrical Properties of PrAlO formed by Atomic Layer Deposition.
Kazuya Furuta, Wakana Takeuchi, Mitsuo Sakashita, Hiroki Kondo, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(9) 13:45 - 14:10
High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm
Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.)

(10) 14:10 - 14:35
Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces
Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)

(11) 14:35 - 15:00
Control of GeO2 Properties and Improvement of Ge/GeO2 Interface Characteristics Based on the Understanding of Geo2/Ge Interface Reaction
Koji Kita (Univ. of Tokyo/JST-CREST), Sheng Kai Wang, ChoongHyun Lee, Mahoro Yoshida (Univ. of Tokyo), Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST)

----- Break ( 15 min. ) -----

(12) 15:15 - 15:35
70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo)

(13) 15:35 - 15:55
Study of pattern area reduction for System LSI with SGT and stacked SGT
Takahiro Kodama, Shigeyoshi Watanabe (Shonan Inst. of Tech.)

(14) 15:55 - 16:15
Study of stacked NOR type MRAM for universal memory
Shouto Tamai, Shigeyoshi Watanabe (Shonan Inst. of Tech.)

----- Break ( 15 min. ) -----

(15) 16:30 - 16:50
Research of ReRAM with Copper-oxide superconductor
-- Operation clarification of Perovskite type ReRAM --
Katsuhiko Matsubara, Kentaro Kinoshita, Akihiro Hanada, Satoru Kishida (Tottori Univ.)

(16) 16:50 - 17:10
The influence of Y incorporation into TiO2 on Electronic States and Resistive Switching Characteristics
Akio Ohta, Yuta Goto, Mohd Fairuz Kamarulzaman, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)

(17) 17:10 - 17:30
Resistive Memory utilizing Ferritin Protein with Nano Particle
-- Control of a Current Path using Metal Nano Particle --
Mutsunori Uenuma, Kentaro Kawano (NAIST/CREST JST), Shigeo Yoshii, Ichiro Yamashita (NAIST/Panasonic Corp.), Yukiharu Uraoka (NAIST/CREST JST)

----- Banquet ( 90 min. ) -----

# Information for speakers
General Talk ((5)-(8)(12)-(17)) will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk ((1)-(4)(9)-(11)) will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Wed, Jun 30, 2010 - Fri, Jul 2, 2010: Tokyo Inst. of Tech. Ookayama Campus [Thu, Apr 15], Topics: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
Thu, Aug 26, 2010 - Fri, Aug 27, 2010: Sapporo Center for Gender Equality [Wed, Jun 9], Topics: Low voltage/low power techniques, novel devices, circuits, and applications

# SECRETARY:
Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-mail: Hi