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=============================================== Technical Committee on Electron Device (ED) Chair: Takao Waho Vice Chair: Masaaki Kuzuhara Secretary: Tsuyoshi Tanaka, Manabu Arai Assistant: Shin-ichiro Takatani =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Kiyoshi Ishii Vice Chair: Kiichi Kamimura Secretary: Yoshitaka Kitamoto, Toru Matsuura Assistant: Hidehiko Shimizu, Seiji Toyoda =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Fumio Horiguchi Vice Chair: Tanemasa Asano Secretary: Morifumi Ohno, Mariko Takayanagi Assistant: Yuichi Matsui DATE: Thu, May 18, 2006 13:00 - 16:55 Fri, May 19, 2006 09:00 - 15:50 PLACE: Venture Business Laboratory, Toyohashi University of Technology(1-1, Hibarigaoka, Tenpaku-cho, Toyohashi-shi, Aichi-ken, Japan 441-8680. Toyotetsu Bus, Toyohashi Station - GIKADAI-MAE ( The University ), No.5 bus stop, 30 min.http://www.vbl.tut.ac.jp/. Prof. Akihiro Wakahara. 0532-44-6742) TOPICS: ---------------------------------------- Thu, May 18 (13:00 - 16:55) ---------------------------------------- (1) 13:00 - 13:25 Improvement of crystal properties of SrS:Cu films for EL elements by using a rapid thermal annealing Masaaki Isai, Kosuke Sasaki, Daisuke Nakagawa (Shizuoka Univ.) (2) 13:25 - 13:50 Preparation and evaluation of Mn oxide films for Li secodary batteries Yuji Chonan, Masaaki Isai, Yasushi Tojyo (Ｓｈｉｚｕｏｋａ Ｕｎｉｖ．) (3) 13:50 - 14:15 Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga2O3 Films Deposited by CSD Method for High Temperatures Marilena Bartic (Shizuoka Univ.), Cristian-Ioan Baban (Al. I. Cuza Univ.), Masaaki Isai, Masami Ogita (Shizuoka Univ.) (4) 14:15 - 14:40 Fabrication of epitaxial γ-Al2O3 thin films by an oxide reduction method and its device applications Takayuki Okada, Mikinori Ito (Toyohashi Univ. of Tech.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST) ----- Break ( 10 min. ) ----- (5) 14:50 - 15:15 RPE-MOCVD-growth of Zn1-xCdxO film for visible emission region Toshiya Ohashi, Junji Ishihara, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.) (6) 15:15 - 15:40 Control of ZnO nanodots on sapphire substrate. Kota Okamatsu, Satoshi Nakagawa, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.) (7) 15:40 - 16:05 Contorol of carbon-nano structure by thermal decomposition on SiC Yoshitaka Hashimoto, Guogiang Zhang, Atsushi Nakamura, Akira Tanaka, Jiro Temmyo (Sizuoka Univ.) (8) 16:05 - 16:30 Synthesis of GaN based blue phosphors using metal EDTA complex Shinya Koide, Kazuya Nakamura, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ), Atsushi Nakamura, Nobuyishi Nanbu (chubu chelest) (9) 16:30 - 16:55 Fabrication and Characterization of Photonic Crystal structure on microfabricated Si Substrate Takeharu Ishii, Fumiaki Matsuoka, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ---------------------------------------- Fri, May 19 (09:00 - 15:50) ---------------------------------------- (1) 09:00 - 09:25 Microstructure of group-III nitride semiconductors grown on m-plane SiC Tetsuya Nagai, Takeshi Kawashima, Kiyotaka Nakano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) (2) 09:25 - 09:50 Heteroepitaxy of GaN for Si-GaN OEIC Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.) (3) 09:50 - 10:15 Electrical Properties of GaPN Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.) (4) 10:15 - 10:40 InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) ----- Break ( 10 min. ) ----- (5) 10:50 - 11:15 Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) (6) 11:15 - 11:40 Improvement of crystal quality for high effeciency of spin-polarized electron source based on GaAs/GaAsP super-lattice structure Toru Ujihara, Chen Bo, Kenichi Yasui, Ryosuke Sakai, Masahiro Yamamoto, Tsutomu Nakanisihi, Yoshikazu Takeda (Nagoya Univ.) (7) 11:40 - 12:05 Fabrication of patterned GaInAs/GaAs hetero-structure using amorphous arsenic mask Yosuke Noritake, Takumi Yamada, Masao Tabuchi, Yoshikazu Takeda (Nagoya Univ.) ----- Lunch Break ( 65 min. ) ----- (8) 13:10 - 13:35 Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.) (9) 13:35 - 14:00 Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces Mariko Suzuki (Toshiba), Satoshi Koizumi (NIMS), Masayuki Katagiri (Univ of Tsukuba), Tomio Ono, Naoshi Sakuma, Hiroaki Yoshida, Tadashi Sakai (Toshiba) (10) 14:00 - 14:25 Estimation of trap parameters from a slow component of excess carrier decay curves Masaya Ichimura (Nagoya Inst. Technol.) ----- Break ( 10 min. ) ----- (11) 14:35 - 15:00 Light irradiation effect on single-hole-tunneling current of an SOI-FET Zainal A. Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.) (12) 15:00 - 15:25 Tunneling current oscillations in Si/SiO2/Si structures Daniel Moraru, Daisuke Nagata (Shizuoka Univ.), Seiji Horiguchi (Akita Univ.), Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) (13) 15:25 - 15:50 Fabrication of Microchips for Blood Examination Integrated with Solution Pre-treatment Mechanism and Synchronous Photodetection Unit. Toshihiko Noda, Nozomu Hirokubo (Toyohashi Univ. of Tech.), Hidekuni Takao (Toyohashi Univ. of Tech./JST), Narihiro Oku, Kouichi Matsumoto (HORIBA, Ltd.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST) # Information for speakers General Talk (25分) will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Thu, Aug 3, 2006 - Fri, Aug 4, 2006: Osaka Univ. Convention Center [Mon, May 22] # SECRETARY: Tsuyoshi Tanaka（Matsushita） TEL: 075-956-9083, FAX: 075-956-9110 E-mail:     erl  ci Manabu Arai（New JRC） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:   injrShinichiro Takatani（Hitachi） TEL: 049-278-1477、FAX: 049-278-1419 E-mail: injr=== Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Jun 30, 2006: Kikai-Shinko-Kaikan Bldg. [Sun, Apr 23], Topics: Piezoelectric Devices, Piezoelectric Materials, Ferroelectric Materials, Organic Electronics, etc. (ES Summer Meeting of Materials and Devices) Mon, Aug 7, 2006 - Tue, Aug 8, 2006: Iwate Univ. [Mon, May 22], Topics: Electronic Component Parts and Materials, etc. Thu, Aug 24, 2006 - Fri, Aug 25, 2006: Chitose Arcadia Plaza [Fri, Jun 16] # SECRETARY: Yoshitaka Kitamoto (Tokyo Institute of Technology) TEL 045-924-5424, FAX 045-924-5433 E-mail:    iem   Tohru Matsuura (ATR) TEL 0774-95-1173, FAX 0774-95-1178 E-mail: h matr === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Wed, Jun 21, 2006 - Thu, Jun 22, 2006: Faculty Club, Hiroshima Univ. [Fri, Apr 14], Topics: Science and Technologies of Dielectric Thin Films for Future Electron Devices Thu, Aug 17, 2006 - Fri, Aug 18, 2006: Hokkaido University [Mon, Jun 19] # SECRETARY: Mariko Takayanagi (Toshiba) TEL 045-770-3638 ,FAX 045-770-3571 E-mail:     gi baLast modified: 2006-03-27 20:21:08 |
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