| IEICE Technical Committee Submission System Advance Program |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top | Go Back | Prev LQE Conf / Next LQE Conf | [HTML] / [HTML(simple)] / [TEXT] | [Japanese] / [English] |
|
=============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Tsuyoshi Yamamoto (Fujitsu Labs.) Vice Chair: Kiichi Hamamoto (Kyusyu Univ.) Secretary: Takashi Katagiri (Tohoku Univ.), Hideki Yagi (SEI) Assistant: Yasumasa Kawakita (Furukawa Electric Industries), Naoki Fujiwara (NTT) =============================================== Technical Committee on Electron Devices (ED) Chair: Kunio Tsuda (Toshiba) Vice Chair: Michihiko Suhara (TMU) Secretary: Manabu Arai (New JRC), Masataka Higashiwaki (NICT) Assistant: Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (TUT) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Fumihiko Hirose (Yamagata Univ.) Vice Chair: Mayumi Takeyama (Kitami Inst. of Tech.) Secretary: Nobuyuki Iwata (Nihon Univ.), Yuichi Nakamura (Toyohashi Univ. of Tech.) Assistant: Yuichi Akage (NTT) DATE: Thu, Nov 30, 2017 13:35 - 17:05 Fri, Dec 1, 2017 09:40 - 17:30 PLACE: (http://www.nitech.ac.jp/eng/access/index.html. Prof. Takashi Egawa. +81-52-732-2111) TOPICS: Nitride Semiconductor Devices, Materials, Related Technologies ---------------------------------------- Thu, Nov 30 PM (13:30 - 15:15) ---------------------------------------- ----- ( 5 min. ) ----- (1) 13:35 - 14:00 A novel method to measure absolute internal quantum efficiency in InGaN quantum wells by simultaneous photo-acoustic and photoluminescence spectroscopy Naoto Shimizu, Yuchi Takahashi, Genki Kobayashi, Takashi Nakano, Shigeta Sakai, Atsusi A. Yamaguchi (Kanazawa Inst. of Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) (2) 14:00 - 14:25 Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) (3) 14:25 - 14:50 Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi (Kanazawa Inst. of Tehc.), Yuya Kanitani, Shigetaka Tomiya (Sony) (4) 14:50 - 15:15 Optical properties of AlGaN quantum wires formed on AlN with macrostep surface Minehiro Hayakawa, Yuki Hayashi, Yuki Nagase, Shuhei Ichikawa, Kyosuke Kumamoto, Mami Shibaoka, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, Nov 30 PM (15:25 - 17:05) ---------------------------------------- (5) 15:25 - 15:50 Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) (6) 15:50 - 16:15 Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) (7) 16:15 - 16:40 Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy Kenji Shiojima, Takanori Hashizume (Univ. of Fukui), Masafumi Horikiri, Takeshi Tanaka (SCIOCS), Tomoyoshi Mishima (Hosei Univ.) (8) 16:40 - 17:05 Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates -- Metal workfunction dependence of Schottky barrier height -- Kenji Shiojima, Hiroyoshi Imadate (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ---------------------------------------- Fri, Dec 1 AM (09:40 - 11:20) ---------------------------------------- (9) 09:40 - 10:05 A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) (10) 10:05 - 10:30 Realization of red resonant cavity LEDs with an Eu-doped GaN as active layer Jun Tatebayashi, Tomohiro Inaba, Keishi Shiomi, Yasuhumi Fujiwara (Osaka Univ.) (11) 10:30 - 10:55 Two-step graded p-AlGaN structure for deep UV-LEDs Hisanori Kojima, Toshiki Yasuda, Daiki Kanbayashi, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) (12) 10:55 - 11:20 Achievement of AlGaN deep-UV LED using photonic crystal(PhC) -- Achievement of high-EQE(10%) AlGaN deep-UV LED using highly-reflective PhC on p-contact layer -- Yukio Kashima (Marubun), Noritoshi Maeda (RIKEN), Eriko Matsuura (Marubun), Masafumi Jo (RIKEN), Takeshi Iwai, Toshiro Morita (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Ryuichiro Kamimura, Yamato Osada (ULVAC), Yuichi Kurashima, Hideki Takagi (AIST), Hideki Hirayama (RIKEN) ----- Break ( 70 min. ) ----- ---------------------------------------- Fri, Dec 1 PM (12:30 - 14:10) ---------------------------------------- (13) 12:30 - 12:55 Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) (14) 12:55 - 13:20 Improvement of PBTI reliability in GaN-MOSFETs Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) (15) 13:20 - 13:45 Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) (16) 13:45 - 14:10 Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, Dec 1 PM (14:20 - 16:00) ---------------------------------------- (17) 14:20 - 14:45 Two-step crystal growth of GaN nanowire by MOCVD Kohei Sasai, Myunghee KIM, Atusi Suzuki, Hiroki Sibuya, Yuki Kurisaki, Kyohei Nokimura, Minoru Takebayasi, Satosi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki (Meijo Univ.) (18) 14:45 - 15:10 Homoepitaxial growth on sputtered AlN templates by MOVPE Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) (19) 15:10 - 15:35 Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito (Mie Univ.), Ryuji Katayama (Osaka Univ.) (20) 15:35 - 16:00 Thermal annealing of semipolar AlN on m-plane sapphire Masafumi Jo, Satoshi Minami, Hideki Hirayama (RIKEN) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, Dec 1 PM (16:10 - 17:30) ---------------------------------------- (21) 16:10 - 16:35 Dye sensitized solar cells using zeolite coated TiO2 photonanodes Takahiro Imai, Yoshiharu Mori, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) (22) 16:35 - 17:00 Application of the FDTD Aglgorithm with Envelope Method to Optical Analysis of Organic Photovoltaics Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.) (23) 17:00 - 17:25 Enhanced efficiency of quantum dot sensitized solar cell by localized surface plasmon resonance of silver nanoparticles Yuya Kibata, Masanori Miura, Kensaku Kanomata, Shigeru Kubota, Fumihiko Hirose, Bashir Ahmmad Arima (Yamagata Univ.) ----- ( 5 min. ) ----- # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Lasers and Quantum Electronics (LQE) === # FUTURE SCHEDULE: Fri, Dec 15, 2017 (tentative): [unfixed] Thu, Jan 25, 2018 - Fri, Jan 26, 2018 (tentative): [Mon, Nov 13] Fri, Feb 23, 2018: [unfixed] # SECRETARY: Takashi Katagiri（Tohoku Univ） TEL +81-22-795-7107, FAX +81-22-795-7106 E-mail:   gi  ecei     Hideki Yagi (SEI) TEL +81-45-853-7318 E-mail:  gi- de  i # ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/ === Technical Committee on Electron Devices (ED) === # FUTURE SCHEDULE: Mon, Dec 18, 2017 - Tue, Dec 19, 2017: RIEC, Tohoku Univ [Fri, Oct 27], Topics: Millimeter-wave, terahertz-wave devices and systems Thu, Jan 25, 2018 - Fri, Jan 26, 2018: Kikai-Shinko-Kaikan Bldg. [Fri, Nov 17], Topics: Compound semiconductor, High speed and High frequency devices/Microwave technologies Wed, Feb 28, 2018 (changed): Centennial Hall, Hokkaido Univ. [Wed, Dec 20], Topics: Functional nanodevices and related technologies # SECRETARY: Manabu Arai（New Japan Radio Co.,Ltd) TEL：+81-049-278-1441 FAX：+81-49-278-1269 E-mail：   injrMasataka Higashiwaki (NICT) TEL : +81-42-327-6092 Fax : +81-42-327-5527 E-mail : m     === Technical Committee on Component Parts and Materials (CPM) === Last modified: 2018-11-22 09:56:25 |
Notification: Mail addresses are partially hidden against SPAM.
[Download Paper's Information (in Japanese)] <-- Press download button after click here.
[Cover and Index of IEICE Technical Report by Issue]
[Presentation and Participation FAQ] (in Japanese)
[Return to ED Schedule Page] / [Return to CPM Schedule Page] / [Return to LQE Schedule Page] /
| Go Top | Go Back | Prev LQE Conf / Next LQE Conf | [HTML] / [HTML(simple)] / [TEXT] | [Japanese] / [English] |
[Return to Top Page]