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Technical Committee on Electron Device (ED)
Chair: Tetsu Kachi (Toyota Central R&D Labs.) Vice Chair: Naoki Hara (Fujitsu Labs.)
Secretary: Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic)
Assistant: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)

DATE:
Thu, Jul 26, 2012 13:30 - 16:40
Fri, Jul 27, 2012 09:30 - 12:15

PLACE:

TOPICS:
Semiconductor Process and Devices (surface, interface, reliability), others

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Thu, Jul 26 PM (13:30 - 16:40)
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(1) 13:30 - 13:55
Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs
Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. Fukui)

(2) 13:55 - 14:20
Measurement of Channel Electron Mobility in AlGaN/GaN MISHFET
Kentaro Tamai, Jin-Ping Ao (Tokushima Univ.), Daigo Kikuta (Toyota Central R&D Labs., Inc.), Masahiro Sugimoto (Toyota Motor Corporation), Yasuo Ohno (Tokushima Univ.)

(3) 14:20 - 14:45
Temperature dependence of frequency dispersion in $C$-$V$ characteristics of AlN/AlGaN/GaN MIS-HFET
Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST)

----- Break ( 15 min. ) -----

(4) 15:00 - 15:25
Interface characterization of AlInN/GaN heterostructures
Tamotsu Hashizume, Yujin Hori, Masamichi Akazawa (Hokkaido Univ.)

(5) 15:25 - 15:50
Effect of ICP Etching on p-type GaN Schottky Contacts
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui)

(6) 15:50 - 16:15
Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui)

(7) 16:15 - 16:40
Investigation of impact ionization in AlGaN/GaN HEMTs using full-band Monte Carlo model
Kazuki Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Fukui Univ.)

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Fri, Jul 27 AM (09:30 - 12:15)
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(8) 09:30 - 09:55
Delay Time Analysis of Strained InSb HEMTs Using Quantum-Corrected Monte Carlo Method
Yutaro Nagai, Jun Sato, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.), Akira Endoh, Issei Watanabe (NICT)

(9) 09:55 - 10:20
Modeling of nonlinear quantum transport for tunnel diodes and theoretical analysis of its cut-off frequency
Shin Yamashita, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.)

(10) 10:20 - 10:45
Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas
Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.)

----- Break ( 15 min. ) -----

(11) 11:00 - 11:25
Study on Synchronized Charge Transfer and Efficiency in GaAs-based Etched Nanowire CCD
Yuki Nakano, Takayuki Tanaka, Seiya Kasai (Hokkaido Univ.)

(12) 11:25 - 11:50
Spin injection experiment into high In-content InGaAs/InAlAs two-dimensional electron gas carried out in a non-local configuration
Shiro Hidaka, Taro Kondo, Masashi Akabori, Syoji Yamada (JAIST)

(13) 11:50 - 12:15
Graphene FET with Diamondlike Carbon Dielectrics
Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Yuki Kurita, Yuji Takakuwa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===

# SECRETARY:
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E-mail :